M27V160 Search Results

Contextual Info: w # S G S -T H O M S O N M27V160 V # « RitlD M li[Lli©inS lii!lD©i 16 Mb 2Mb x 8 or 1Mb x 16) LOW VOLTAGE UV EPROM and OTP EPROM NOT FOR NEW DESIGN • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 110ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE

M27V160

Abstract: PDIP42 Q15A
Contextual Info: M27V160 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 20µA

Contextual Info: M27V160 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM • 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE 42 42 ■ 16 Mbit MASK ROM REPLACEMENT 1 ■ LOW POWER CONSUMPTION FDIP42W (F)

Contextual Info: M27V160 LOW VOLTAGE 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz

M27C160

Abstract: M27V160 M27W160 Q15A
Contextual Info: M27V160 16 Mb 2Mb x 8 or 1Mb x 16 LOW VOLTAGE UV EPROM and OTP EPROM NOT FOR NEW DESIGN LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz

Contextual Info: M27V160 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM Features • 3V to 3.6V Low Voltage in Read Operation ■ Access Time: 100 ns 42 42 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c

M27V160

Abstract: M27W160 M27C160
Contextual Info: . SGS-THOMSON M27V160 k7 # . RfilDÊlMSJlilUKg'inEORODtgi 16 Mb 2Mb x 8 or 1Mb x 16 LOW VOLTAGE UV EPROM and OTP EPROM N O T F O R N E W D E S IG N • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 110ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE

Contextual Info: SGS-THOMSON M27V160 LOW VOLTAGE 16 Megabit 2Meg x 8 or 1Meg x 16 _ UV EPROM and OTP EPROM PR ELIM IN A R Y DATA • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 110ns ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 16 Megabit M ASK ROM REPLACEMENT

M27V160

Abstract: PDIP42 Q15A
Contextual Info: M27V160 16 Mbit 2Mb x8 or 1Mb x 16 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 100ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE ■ 16 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION – Active Current 30mA at 8MHz

SO44-2

Abstract: M27V160 PDIP42 PLCC44 Q15A SDIP42 M27C16
Contextual Info: M27V160 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM • 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE ■ 16 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION 42 42 1 1 PDIP42 (B)

01Q11

Abstract: STMicroelectronics DATE CODE m27
Contextual Info: M27V160 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM • 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE ■ 16 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION 42 42 1 1 PDIP42 (B)

M27V160

Abstract: PDIP42 Q15A b 0634
Contextual Info: M27V160 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM • 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE ■ 16 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION – Active Current 30mA at 8MHz

M27C160

Abstract: M27V160 M27W160 Q15A
Contextual Info: M27V160 16 Mb 2Mb x 8 or 1Mb x 16 LOW VOLTAGE UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION 44 42 – Active Current 70mA at 8MHz

27V160

Contextual Info: M27V160 16 Mbit 2Mb x 8 or 1Mb x 16 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 110ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE ■ 16 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION - Active Current 30mA at 8MHz

M27V160

Abstract: 32 megabit 16 bit
Contextual Info: M27V160 LOW VOLTAGE 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz

PLCC44 package

Abstract: M27V160 PDIP42 PLCC44 Q15A SDIP42
Contextual Info: M27V160 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM • 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE ■ 16 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION 42 42 1 1 PDIP42 (B)

FDIP42WB

Abstract: JESD97 M27V160 PDIP42 PLCC44 Q15A SDIP42
Contextual Info: M27V160 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM Features • 3V to 3.6V Low Voltage in Read Operation ■ Access Time: 100 ns ■ Byte-wide or Word-wide Configurable ■ 16 Mbit Mask ROM Replacement ■ Low Power Consumption – Active Current: 30 mA at 8 MHz

FDIP42WB

Abstract: JESD97 M27V160 PDIP42 PLCC44 Q15A SDIP42
Contextual Info: M27V160 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM Features • 3V to 3.6V Low Voltage in Read Operation ■ Access Time: 100 ns ■ Byte-wide or Word-wide Configurable ■ 16 Mbit Mask ROM Replacement ■ Low Power Consumption – Active Current: 30 mA at 8 MHz

ST m27c512

Abstract: TSOP44 Package SO32 m27c1001 plcc32 ST M27C256B Atmel 642 M27C4002 m27c4001 CROSS REFERENCE PLCC32 package EPROM m27c2001
Contextual Info: OTP and UV EPROM Products www.st.com/eprom Cross Reference Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Introduction Long-term commitment STMicroelectronics will support the EPROM market in the long term with a strong commitment, guaranteeing manufacturing capability and high quality service. Continuous

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

Realtek RX2

Abstract: Rx2N st s34 c105 AM29DL32XD ATMEL 2416 c258 diode 910 b34 FD31 RC3041 RC32332
Contextual Info: IDT Interprise™ 79EB365 Evaluation Board Manual July 2003 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 330-1748 Printed in U.S.A. 2003 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance

PLCC32

Abstract: M27C M27W101 M27W102 M27W201 M27W401 M27W402 M27W512 M27W801 TSOP32
Contextual Info: OTP and UV EPROMs New Expanded Range ADVANCED PRODUCTS - DEPENDABLE SOLUTION The ST range of OTP and UV EPROMs is one of the widest in the world. Densities from 16 Kbit to 32 Mbit, plastic and ceramic windowed packages - both surface mounting and through hole standard 5V and low voltage, 3V, operation.