M27V512 Search Results

M27C512

Abstract: M27V512 M27W512 PDIP28 PLCC32
Contextual Info: M27V512 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM NOT FOR NEW DESIGN LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

FAH10

Abstract: gvrp jl m27c512 1N914 M27C512 M27V512 PLCC32 VA10
Contextual Info: r Z J S G S -T H O M S O N ^ 7 w . lMD § @liIUI®in3 R0]©l M27V512 LOW VOLTAGE 512K (64K x 8 OTP ROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ ACCESS TIME: 120,150 and 200ns ■ LOW POWER "CMOS” CONSUMPTION: - Active Current 10mA - Standby Current 10|xA

M27V512

Abstract: M27W512 PDIP28 PLCC32
Contextual Info: M27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM NOT FOR NEW DESIGN • M27V512 is replaced by the M27W512 ■ 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: 28 28 – Active Current 10mA at 5MHz ■

M27C512

Abstract: M27V512 M27W512 PDIP28 PLCC32
Contextual Info: M27V512 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

M27G512

Contextual Info: 5 F. _ M27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: - Active Current 10m A at5M H z - Standby Current 10^A ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

Contextual Info: r=J SGS-THOMSON M27V512 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM NOT FOR NEW DESIGN • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 90ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|uA ■ PROGRAMMING VOLTAGE: 12.75V

M27V512

Abstract: PDIP28 PLCC32
Contextual Info: M27V512 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: – Active Current 10mA at 5MHz 28 28 – Standby Current 10µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

Contextual Info: M27V512 512 Kbit 64Kb X 8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: - Active Current 10mAat5MHz - Standby Current 10|j,A ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 100|^s/byte (typical)

Contextual Info: r = 7 SGS-1H0MS0N M27V512 * 1Ë» OKilD g[S i[Li(g,inS© iD(gi LOW VOLTAGE CMOS 512K (64K x 8 OTP ROM ABBREVIATED DATA LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (TA= 0 to 70°C) - Vcc Range: 3.2V to 5.5V (TA = -4 0 to 85°C) ACCESS TIME: 120, 150 and 200ns

NS1051

Contextual Info: M27V512 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

M27V512

Abstract: M27W512 PDIP28 PLCC32
Contextual Info: M27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM NOT FOR NEW DESIGN • M27V512 is replaced by the M27W512 ■ 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: 28 28 – Active Current 10mA at 5MHz 1

M27V512

Abstract: PDIP28 PLCC32
Contextual Info: M27V512 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM DATA BRIEFING • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: – Active Current 10mA at 5MHz 28 28 – Standby Current 10µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

Contextual Info: / = T *7 # « S G S -ÎH O M S O N ,QJ 1Mq * S & M27V512 LOW VOLTAGE CMOS 512K 64K x 8) OTP ROM • LOW VOLTAGE READ OPERATION - V c c Range: 3V to 5.5V (Ta = 0 to 70°C) - V c c Range: 3.2V to 5.5V (T a = -4 0 to 85°C) ■ ACCESS TIME: 120, 150 and 200ns

Contextual Info: F Z J #« S G S - T H O M S O N M27V512 M g^(Q i[Li(iM (Q )[*§ LOW VOLTAGE CMOS 512K (64K x 8) OTP ROM • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (Ta = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (T a = -4 0 to 85°C) ■ ACCESS TIME: 200 and 250ns

M27V512

Abstract: M27W512 PDIP28 PLCC32
Contextual Info: M27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM NOT FOR NEW DESIGN • M27V512 is replaced by the M27W512 ■ 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: 28 28 – Active Current 10mA at 5MHz ■

EPROM M27C512

Contextual Info: rZ T SCS-1H0 MS0 N *7 # M27V512 RfflDM§ iILlim®ROD i LOW VOLTAGE CMOS 512K 64K x 8) OTP ROM • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (TA = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (T a = - 4 0 to 85°C) ■ ACCESS TIME: 200 and 250ns * LOW POWER "CMOS" CONSUMPTION:

PLCC32

Abstract: Thomson capacitors lcc SGS M27C512 1N914 M27C512 M27V512
Contextual Info: M27V512 LOW VOLTAGE 512K 64K x 8 OTP ROM LOW VOLTAGE READ OPERATION: 3V to 5.5V ACCESS TIME: 120, 150 and 200ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 10mA – Standby Current 10µA PROGRAMMING VOLTAGE: 12.75V PROGRAMMING TIMES of AROUND 6sec.

90K-1

Contextual Info: M27V512 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

M27V512

Abstract: PDIP28 PLCC32 FDIP28W
Contextual Info: M27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION: – Active Current 10mA at 5MHz – Standby Current 10µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V

M27C512 SGS-THOMSON

Abstract: E5 marking M27C256B M27C512 M27V512 M27C512 marking QR101
Contextual Info: QUALIFICATION REPORT 256K & 512K bit CMOS-E5 OTP ROM in TSOP28 INTRODUCTION The concerned products to this Qualification Report are: M27C256B-XXNY, M27C512-XXNY, M27V512-XXNY where "XX" is for access time class and "Y" for temperature range. The M27C256B is a 256K bit OTP ROM, organized as 32K x 8 bits. The M27C512 and the

Contextual Info: /T T SGS'THOMSON ^ 7 # G fflD IIM ilLIO T M O IS i M 2 7V 5 12 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 90ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|jA

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

palce16v8 programming algorithm

Abstract: PH29EE010 ATMEL 620 93c46 EPROM NMC27C512AQ atmel 130 24c02 EP320I gal16v8 stag orbit 32 device list ph29ee010-xx gal16v8 programming
Contextual Info: Datum 18.11.1998 aus www.stagusa.com Orbit 48 Device Support List Version 25.0 Note ALL PLDs require Orbit 48 PLD Module Please consult device specific information at the end of this list. Stag Programmers Ltd. Silver Court, Watchmead, Welwyn Garden City, Herts AL7 1LT, U.K.

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS