MARK WC SOT23 Search Results

2N7002K

Abstract: E5 marking sot23 6 wc sot23 marking EA SOT23 E2- marking h8 marking sot23 marking JB E5 Marking Marking E5 JA MARKING SOT23
Contextual Info: SEMICONDUCTOR 2N7002K MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. WC 0 1 2. Marking 2 Item Marking Description Device Mark WC 2N7002K * Lot No. 01 Manufacturing date Year/Week Note) * Lot No. marking method * : Lot No. marking method

MMBT2222A

Abstract: PN2222A PZT2222A
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol

sot23 mark code e2

Abstract: 8q diode sot23 MARK 8F SOT-23 mark 8m sot-23 5252b 5251B 8C SOT-23 8F sot23 8Y SOT23 FAIRCHILD SOT-23 MARK 30
Contextual Info: Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature 3 Value Units -55 to +150 °C + 150 °C mW mW/°C Total Device Dissipation Derate above 25°C 350 2.8 2

FAIRCHILD SOT-23 MARK 1a

Abstract: BC846 SOT23 NPN sot23 mark NF 847C BC846 BC846A BC846B BC847 BC847A fAIRCHILD BC847b
Contextual Info: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.

diode 5V1 sot23

Abstract: SOT23 MARK Y2 SOT23 MARK Y2 Diode SOT23 MARK Y3 mark Y1 SOT-23 Y2 sot23 mark y1 SOT23 body mark 3V6 SOT-23 DIODE BZX 24 7v5, sot-23
Contextual Info: Tolerance: C = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Value Units -55 to +150 °C + 150 °C Total Device Dissipation Derate above 25°C Repetitive Peak Forward Current IFRM 350 1.8 250 mW mW/°C

5251B

Abstract: 8C SOT-23 5233B mark 8m sot-23 Zener 5.1V 5228B MMBZ5226B MMBZ5257B SOT-23 Zener Diode Zener diode 81A
Contextual Info: Tolerance: B = 5% Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value 3 Units TSTG Storage Temperature Range -55 to +150 °C TJ Maximum Junction Operating Temperature Total Device Dissipation Derate above 25°C + 150 °C 350

MPSA65

Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

sot23 mark code e2

Abstract: mark PD sot-23 BC817 BC818-25 BC818-40 FAIRCHILD SOT-23 MARK 30
Contextual Info: BC818-25 / BC818-40 BC818-25 BC818-40 C E SOT-23 B Mark: 6F. / 6G. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. See BC817 for characteristics.

SOT23 MARK Y2

Abstract: Zener Diode BZx 84 diode ZENER y8 sot23 212 t sot-23 3V3 -ZENER DIODE mark Y1 SOT-23 diode 5V1 sot23 BZX 5.1v 6V2 Zener Diode SOT zener BZX 3V3
Contextual Info: Tolerance: C = 5% Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value TSTG Storage Temperature Range -55 to +150 °C TJ + 150 °C IFRM Maximum Junction Operating Temperature Total Device Dissipation Derate above 25°C Repetitive Peak Forward Current IFRM

CBVK741B019

Abstract: F63TNR MMBTA13 MPSA13 MPSA14 PN2222N PZTA13
Contextual Info: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

25c reference top mark sot23

Abstract: sot23 A63
Contextual Info: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

Contextual Info: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

BCW65C

Abstract: BSR14 SOT23 NE
Contextual Info: BSR14 BSR14 C E SOT-23 B Mark: U8 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics. Absolute Maximum Ratings* Symbol

CJE SOT-23

Abstract: sot23 mark code e2 FAIRCHILD SOT-23 MARK 30 BCW68G BSR15 On semiconductor date Code sot-23 SOT-23 CEB mark PD sot-23 MARK wc SOT23
Contextual Info: BSR15 BSR15 C E SOT-23 B Mark: T7 PNP General Purpose Amplifier This device is designed for use as general purpose amplifier and switches requiring collector currents to 500 mA. Sourced from Process 63. See BCW68G for characteristics. Absolute Maximum Ratings*

BC817-25

Abstract: BC817-40
Contextual Info: BC817-25 / BC817-40 BC817-25 BC817-40 C E SOT-23 B Mark: 6B. / 6C. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*

Contextual Info: BCV26 BCV26 C E SOT-23 B Mark: FD PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

transistor bel 100

Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
Contextual Info: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol

BEL 188 pnp TRANSISTOR characteristics

Abstract: bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N
Contextual Info: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

BEL 188 pnp TRANSISTOR characteristics

Abstract: bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor
Contextual Info: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

FAIRCHILD SOT-23 MARK 30

Abstract: BCW31 BCW32 BCW33
Contextual Info: BCW31 / BCW32 / BCW33 BCW31 BCW32 BCW33 C E B SOT-23 Mark: D1 / D2 / D3 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Absolute Maximum Ratings* Symbol 3 TA = 25°C unless otherwise noted

mark 641 sot

Abstract: mark 641 sot dc BSS63 sot23 mark code CB CB SOT-23
Contextual Info: BSS63 BSS63 C E SOT-23 B Mark: T3 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

BCW71

Abstract: On semiconductor date Code
Contextual Info: BCW71 BCW71 C E SOT-23 B Mark: K1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

BSS64

Abstract: 01BV CJE SOT-23
Contextual Info: BSS64 BSS64 C E SOT-23 B Mark: U3 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted