MARKING CODE CE SOT23 Search Results

marking code p07 sot89

Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Contextual Info: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING

SMBT4403

Abstract: SMBT5401 SMBT4401 marking 2G SOT23
Contextual Info: SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - SOT-23 PACKAGE CASE 37 SURGE PART NUMBER V CEO V l o p e r a t in g ^C F S A T y /s & Vv ce ! G to r ag e tem per atu r e ’ c es w Marking Code Volts SMBT2222A 1P 40 1 0 0 -3 0 0 10/1 50 1.0 SMBT3904 SMBT4401

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

MOSFET MARKING 3F

Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
Contextual Info: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz

Marking Code FGs

Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23

MARKING SOT23 dbs

Contextual Info: BCW67, BCW68 PNP Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary types: BCW66. NPN Type Marking Pin Configuration Package BCW67A DAs 1=B 2=E 3=C SOT23 BCW67B

MAM25S

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistor FEATURES PMBT5550 PINNING • Low current max. 300 mA PIN • Low voltage (max. 140 V). 1 2 emitter APPLICATIONS 3 collector DESCRIPTION base • Telephony. DESCRIPTION — 3 NPN high-voltage transistor in a SOT23 plastic package.

Contextual Info: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66G EGs 1=B

bcw66

Contextual Info: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B

egs SOT23

Contextual Info: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B

SOT23-5 pwm generator

Abstract: AP1624 FDS6612 SS240 345KHZ
Contextual Info: AP1624 PWM/PFM Dual Mode Step-up DC/DC Controller „ Features „ General Descriptions - Input Voltage Range: 0.9~6V - PWM/PFM Switching Control - High Efficiency: 90% - Oscillator Frequency: 300kHz（±15%） - Stand-by Current: ISTB=3µA.（Typ.） - Pb-Free Package: SOT23-5

SOT23-5 pwm generator

Abstract: PFM SOT23 SS240 marking code 10 sot23 marking code ce SOT23 PWM 003 AP1624 FDS6612 AF230
Contextual Info: AP1624 PWM/PFM Dual Mode Step-up DC/DC Controller „ Features „ General Descriptions - Input Voltage Range: 0.9~6V - PWM/PFM Switching Control - High Efficiency: 90% - Oscillator Frequency: 300kHz（±15%） - Stand-by Current: ISTB=3µA.（Typ.） - Pb-Free Package: SOT23-5

Contextual Info: SMBTA56/ MMBTA56 PNP Silicon AF Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA06 / MMBTA06 NPN 2 1 Type SMBTA56/ MMBTA56 Marking s2G Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings

Contextual Info: PMBT5551 SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT23 package. QUICK REFERENCE DATA Collector-base voltage open emitter VCBO max. Collector-emitter voltage (open base)

Contextual Info: SMBTA56/ MMBTA56 PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBTA06 / MMBTA06 NPN Type SMBTA56/ MMBTA56 Marking s2G 1 Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings

BCX41

Contextual Info: BCX41 NPN Silicon AF and Switching Transistor • For general AF applications • High breakdown voltage 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCX42 PNP Type BCX41 Marking EKs Pin Configuration 1=B 2=E Package SOT23 3=C

BCV26

Abstract: BCV27 BCV46 BCV47
Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors • For general AF applications • High collector current 2 3 • High current gain 1 • Complementary types: BCV27, BCV47 NPN Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs

MMBTA06 S1G

Contextual Info: SMBTA06/ MMBTA06 NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBTA 56 / MMBTA56 PNP Type SMBTA06/ MMBTA06 Marking s1G Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings

UK39

Abstract: ABWF ABWG ABVZ ABTK ABIK ABGV ABAZ ABEE MARKING ABHO
Contextual Info: JV X Æ X A JV i 19-1145; RevO; 9/96 5-Pin, M ultiple-Input, Program m able R e s e t ICs T hese d e v ic e s are a va ila b le in a SOT23-5 p a cka g e , have factory-program m ed reset thresholds from 2.5V to 5.0V in 100mV increm ents , and feature four power-on

Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors • For general AF applications • High collector current 2 3 • High current gain 1 • Complementary types: BCV26, BCV46 PNP Type Marking Pin Configuration Package BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs

MAX6365

Abstract: MAX6366 MAX6367 MAX6368 MAX6367PKA44 aabp marking code aaaM AABW marking code AABJ
Contextual Info: 19-1658; Rev 4; 5/09 SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating Features The MAX6365–MAX6368 supervisory circuits simplify power-supply monitoring, battery-backup control functions, and memory write protection in microprocessor

marking code AABJ

Abstract: sot23 mark code AAAM marking code aaam aabp AABB SOT23 5
Contextual Info: 19-1658; Rev 5; 10/11 SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating Features The MAX6365–MAX6368 supervisory circuits simplify power-supply monitoring, battery-backup control functions, and memory write protection in microprocessor

marking code AABJ

Abstract: marking code AACD code marking aabt AABV AACE aabi sot23 mark code AAAM MAX6365 MAX6366 MAX6368
Contextual Info: 19-1658; Rev 4; 5/09 SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating Features The MAX6365–MAX6368 supervisory circuits simplify power-supply monitoring, battery-backup control functions, and memory write protection in microprocessor

MARKING AABB

Abstract: marking code AABJ AABF SOT23 MARKING CODE
Contextual Info: 19-1658; Rev 5; 10/11 SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating Features The MAX6365–MAX6368 supervisory circuits simplify power-supply monitoring, battery-backup control functions, and memory write protection in microprocessor