MARKING SG TRANSISTORS Search Results

MARKING SY SOT23

Abstract: MARKING sg SOT23 2SA1162 2SC2712 MARKING SO
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP 3 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1 2 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG

bsv52

Contextual Info: f Z T SG S-TH O M SO N ^ 7# lüülDSœiiiiSTrœiülOigl BSV52 S02369/S02369A SMALL SIGNAL NPN TRANSISTORS Type Marking BSV52 B2 S02369 N11 S02369A N81 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

2SA1162

Abstract: 2SC2712
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP FEATURES z Low noise : NF= 1dB(Typ.),10dB (Max.) z Complementary to 2SC2712. z Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG

SC06960

Abstract: 1Gt transistor SOA06 SOA56 748 transistor on marking RZ7 SOT23
Contextual Info: r Z 7 SG S-TH O M SO N ^ 7 # is LIOTIMMlig! SOAO6 SMALL SIGNAL NPN TRANSISTOR Type Marking SOAO6 1GT . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . MEDIUM CURRENT AF AMPLIFICATION . PNP COMPLEMENTS IS SOA56

Contextual Info: 2SA1162 PNP Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product SOT-23 A suffix of “-C” specifies halogen & lead-free A FEATURES    L 3 Low Noise : NF= 1dB Typ. , 10dB (Max.) Complementary to 2SC2712. Small Package

Contextual Info: r Z J SGS-THOMSON ^ 7 # . rao œ in itg w s* PLQ 08 PLQ 1 FAST RECOVERY RECTIFIER DIODES • VERY FAST FORWARD AND REVERSE RECOVERY DIODES SUITABLE APPLICATION ■ SWTCHING POWER TRANSISTORS DRIVER C IR C U IT S S E R IE S D IO D E S IN ANTISATURATION CLAMP SPEED UP DIODE

pnp hfe 120-240

Abstract: smd marking SG MARKING SO smd marking sy 2SA1586
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1586 Features High voltage and high current. Excellent hFE linearity. High hFE. Low noise. Small package. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

Plastic-Encapsulate Transistors

Abstract: marking SG transistors 2SA1832
Contextual Info: SOT-523 Plastic-Encapsulate Transistors SOT-523 2SA1832 TRANSISTOR（PNP） 1. BASE 2. EMITTER FEATURES Power dissipation PCM : 0.1 W（Tamb=25℃） Collector current ICM : -0.15 A Collector-base voltage V BR CBO : -50 V Operating and storage junction temperature range

2SA1832

Contextual Info: Transys Electronics L I M I T E D SOT-523 Plastic-Encapsulated Transistors SOT-523 2SA1832 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM : 0.1 W (Tamb=25℃) Collector current : -0.15 A ICM Collector-base voltage V V(BR)CBO : -50

2SA1832

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors SOT-523 2SA1832 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM : 0.1 W (Tamb=25℃) Collector current : -0.15 A ICM Collector-base voltage

Contextual Info: Transistors SMD Type Product specification 2SA1586 Features High voltage and high current. Excellent hFE linearity. High hFE. Low noise. Small package. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 2SA1832 Plastic-Encapsulate Transistors SOT-523 TRANSISTOR PNP FEATURES z High voltage and high current z Excellent hFE linearity z Complementary to 2SC4738 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: Transistors IC SMD Type Product specification 2SA1832 SOT-523 Unit: mm +0.1 1.6-0.1 1.0 +0.05 0.2-0.05 +0.1 -0.1 2 +0.01 0.1-0.01 1 +0.15 1.6-0.15 Excellent hFE Linearity : +0.05 0.8-0.05 High Voltage and High Curren :VCEO=-50V,IC=-150mA Max. 0.55 Features

marking SG transistors

Abstract: A0 SOT 2SA1162
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current : 150

2SA1162

Abstract: marking SG transistors MARKING SO
Contextual Info: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current : 150 mA ICM Collector-base voltage

smd transistor marking SG

Abstract: smd transistor SY transistor smd sG smd marking SG 2SA1832 high hfe transistor hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Type Transistor 2SA1832 SOT-523 Unit: mm +0.1 1.6-0.1 1.0 +0.05 0.2-0.05 +0.1 -0.1 2 +0.01 0.1-0.01 1 +0.15 1.6-0.15 Excellent hFE Linearity : +0.05 0.8-0.05 High Voltage and High Curren :VCEO=-50V,IC=-150mA Max.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1162 TRANSISTOR PNP FEATURES z Low noise: NF=1dB(Typ.)10dB(Max.) z Complementary to 2SC2712 z Small package 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SA1586 TRANSISTOR PNP FEATURES SOT–323  High DC Current Gain  High Voltage and High Current.  Complementary to 2SC4116  Small Package APPLICATIONS  General Purpose Amplification.

KTA2014

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 KTA2014 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES z Low frequency power amplifier application z Power switching application 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W FEATURES • Currentless RF switch. APPLICATIONS • Various RF switching applications such as: - Passive loop through for VCR tuner T o p view - Transceiver switching.

Contextual Info: PRELIMINARY PRM P024F048T12AL V•I Chip – PRM-AL Pre-Regulator Module TM • 24 V input V•I Chip PRM • Adaptive Loop feedback • Vin range 18 – 36 Vdc • ZVS buck-boost regulator • High density – 414 • 1.33 MHz switching frequency W/in3

Contextual Info: PRM P048F048T24AL V•I Chip – PRM-AL Pre-Regulator Module TM • 48 V input V•I Chip PRM • Adaptive Loop feedback • Vin range 36 – 75 Vdc • ZVS buck-boost regulator • High density – 830 • 1.45 MHz switching frequency W/in3 • Small footprint – 215 W/in2

Contextual Info: Not Recommended for New Designs PRM Regulator P048F048T12AL S C NRTL US Non-isolated Regulator Features • 48 V input VI Chip® PRM® • Adaptive Loop feedback • Vin range 36 – 75 Vdc • ZVS buck-boost regulator • High density – 407 W/in3 • 1.45 MHz switching frequency