MICRON TECHNOLOGY Search Results

MT29F128G08AJAAAWP-IT

Abstract: MT29F128G08AJAAAWP MT29F32G08ABCABH1-10IT MT29F32G08ABCABH1 MT29F32G08AB MT29F128G08AJAAA M73A 256gb nand flash mt29f128g08 MT29F128G08A
Contextual Info: MT29F32G08ABCABH1-10IT - Micron Technology, Inc. Page 1 Micron Global Investor Relations News & Events Jobs Contact Micron Login PRODUCTS & SUPPORT ABOUT MICRON How To Buy Sign up for Access Enter Search Term or Part Number MY WORKSPACE MT29F32G08ABCABH1-10IT

Micron Technology

Contextual Info: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and

dram structure

Abstract: 2240 6T SRAM micron sram
Contextual Info: Joint News Release by Infineon and Micron Infineon Technologies and Micron Technology Announce Cooperation to Develop ‘CellularRAM’ Munich, Germany/Boise, Idaho, USA, June 24, 2002 - Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced they

Contextual Info: 4’8 M EGx32 MICRON I SDRAM DIMMs TECHNOLOGY, INC. MT2LSDT432U, MT4LSDT832UD SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View

XH018

Contextual Info: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron

PC/104

Contextual Info: MICRON MICRON MICRON MICRON Low power 200MHz PR266 or 250MHz (PR366) CPU options Up to 256MB SDRAM SST ATA-Disk Chip and CompactFlash support Integrated AGP (x2) Trident CyberBlade Graphics for LCD and CRT 10/100Base-T Ethernet Soundblaster compatible Audio (optional)

nd02d2

Contextual Info: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design

Infineon automotive semiconductor technology roadmap

Abstract: Infineon technology roadmap micron sram
Contextual Info: Joint News Release by Infineon Technologies and Micron Technology Infineon and Micron Announce Partnership to Develop Reduced Latency DRAM Munich, Germany / Boise, Idaho, USA – May 30, 2001 – Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced that

dram 88 pin

Contextual Info: MICRON TECHNOLOGY INC 55E D MICRON I • blllS4T 0DGSDb3 3T0 ■ MRN MT12D88C25636 256K x 36, 512K x 18 IC DRAM CARD - " T

Contextual Info: ADVANCE MICRON I 16’ 32 M E Gx32 SDRAM DIMMs TECHNOLOGY, INC. MT8LSDT1632U, MT8LSDT3232U SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View

memory 9652

Contextual Info: FOR IMMEDIATE RELEASE Contact: Grant Jones Micron Technology, Inc. 208 368-4400 Web Site URL <http://www.micron.com> Fax-on-demand: (800) 239-0337 MICRON TECHNOLOGY, INC., REPORTS RESULTS FOR THE THIRD FISCAL QUARTER OF 2000 Boise, Idaho, June 22, 2000 - Micron Technology, Inc., today reported quarterly net

rpp1k1

Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate

toshiba tc110g

Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective

image sensor micron

Abstract: micron sensor micron HEADBOARD Micron Imaging Demo2 Camera Board Micron Sensor CMOS image sensor usb Contact Image Sensor Head Micron micron CMOS Camera ADAPTEC block diagram OF pentium 2
Contextual Info: Image Sensor Demo System Kits Introduction Image Sensor Demo System Kits Introduction Micron’s CMOS image sensor demo kits are USB-powered camera boards that enable easy testing and characterization of Micron sensors. The Micron Imaging demonstration system family supports the full line of Micron’s CMOS image sensor products.

4LC4M

Contextual Info: 4’8 M EGx32 DRAM DIMMs MICRON I TECHNOLOGY, INC. D P A |\/| MT2LDT432U X , MT4LDT832U (X) _ _ _ I WI f j | j I I I I •I For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES

PT6042

Abstract: VGC453 model values for 0.18 micron technology cmos nd02d2
Contextual Info: V L S I TECHNOLOGY INC T3aa3M? oooaaio □ M7E D V L S I T echn o lo gy , in c . VTI ' PRELIMINARY -0 9 VGC450/VGC453 LIBRARY O.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS

integrated circuit TL 2262

Abstract: PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology VSC470
Contextual Info: V L S I TECHNOLOGY INC M7E D VTI V L S I T ech n o lo g y , in c . T - m PRELIMINARY - m VSC470 SERIES 0.8-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon gate CMOS technology

PC5004

Abstract: VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding
Contextual Info: V L S I T ech n o lo gy, inc. O.6-MICRON _ ASIC PRODUCT FAMILY GENERAL SPECIFICATIONS FEATURES BENEFITS • 0.6-micron 0.55-micron effective two- and three-layer metal CMOS technology. Typical 2-input NAND (FO=2) spec - 5 V (4.5 to 5.5 V): 190 ps, 2.6 nW/MHz

PT6045

Abstract: VSC370 PT6005
Contextual Info: V L S I TECHNOLOGY INC 4 7E D • =1300347 V L S I Tech n o lo gy , in c . 0000070 7 ■ VTI 'T - v z - m VSC370 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology

130 nm CMOS standard cell library

Abstract: 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1 VGC450/VGC453
Contextual Info: V L S I Tech n o lo gy , in c . oec t a PRELIMINARY VGC450/VGC453 LIBRARY O.8-MICRON GATE A R R A Y S E R IE S FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS

VGT300039

Abstract: PT6045 VGT300022 PT6005
Contextual Info: V L S I TECHNOLOGY INC 47 E D T3flfl34? n o n a T T a V L S I Tech n o lo gy , in c . 3 VTI T -H Z -d -C R VGT350/VGT353 LIBRARY I.O-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology

MT29F32G08AFACA

Abstract: MT29F32G08 MT29F32G0
Contextual Info: Specifications Data Sheets B~s/Cell: SLC Brand: Micron Bus Wi<hh: x8 Chill Em1ble: Single Component Density: 32Gb Depth: 2Gb Fall: Micron Family: NAND Flash Generation l>rimaly : First Generation 110 : Common 110 Channels: 1 lnte1face: Async Manufacturer: Micron

Contextual Info: MICRON' I 4 MEG x 16 E D O D R A lV l TECHNOLOGY, INC. n P A M MT4LC4M16R6 MT4LC4M16N3 U r iM IV I For the latest data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/datasheet. html FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply

MT29F32G08AFACAWP-IT

Abstract: MT29F32G08AFACAWP-ITES MT29F32G08AFA MT29F32G08 MT29F32G08AFACAWP
Contextual Info: Specifications Data Sheets B~s/Cell: SLC Brand: Micron Bus Wi<hh: x8 Chill Em1ble: Single Component Density: 32Gb Depth: 2Gb Fall: Micron Family: NAND Flash Generation l>rimaly : First Generation 110 : Common 110 Channels: 1 lnte1face: Async Manufacturer: Micron