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    MJ14002 TRANSISTOR Search Results

    MJ14002 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MJ14002 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ14002

    Abstract: MJ14003 MJ14003 equivalent MJ14001 Mj140
    Text: ON Semiconductort NPN High-Current Complementary Silicon Power Transistors MJ14002 * . . . designed for use in high–power amplifier and switching circuit applications, MJ14003 * PNP MJ14001 • High Current Capability — • • *ON Semiconductor Preferred Device


    Original     		PDF MJ14002 MJ14003 MJ14001 r14525 MJ14001/D MJ14002 MJ14003 MJ14003 equivalent MJ14001 Mj140

    MJ14002

    Abstract: MJ14001 MJ14003 COMPLEMENTARY SILICON POWER TRANSISTORS 200CT
    Text: MOTOROLA Order this document by MJ14001/D SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* PNP MJ14001 MJ14003* High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes


    Original     		PDF MJ14001/D* MJ14001/D MJ14002 MJ14001 MJ14003 COMPLEMENTARY SILICON POWER TRANSISTORS 200CT

    1000 volt npn

    Abstract: MJ14001 equivalent MJ14002G MJ14001 MJ14001G MJ14002 MJ14003
    Text: MJ14001 PNP , MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors Designed for use in high−power amplifier and switching circuit applications. Features • High Current Capability − IC Continuous = 60 Amperes


    Original     		PDF MJ14001 MJ14002* MJ14003* MJ14002/03 MJ14001/D 1000 volt npn MJ14001 equivalent MJ14002G MJ14001 MJ14001G MJ14002 MJ14003

    MJ14002

    Abstract: MJ14002 TRANSISTOR MJ14002G MJ14001 MJ14001G MJ14003 junction to case thermal resistance of to-3 package
    Text: MJ14001 PNP , MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors Designed for use in high−power amplifier and switching circuit applications. Features • High Current Capability − IC Continuous = 60 Amperes


    Original     		PDF MJ14001 MJ14002* MJ14003* MJ14002/03 MJ14002 MJ14002 TRANSISTOR MJ14002G MJ14001 MJ14001G MJ14003 junction to case thermal resistance of to-3 package

    mj14002

    Abstract: mj14003
    Text: MJ14001 PNP , MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors http://onsemi.com Designed for use in high−power amplifier and switching circuit applications. • High Current Capability − • •


    Original     		PDF MJ14001 MJ14002* MJ14003* mj14002 mj14003

    MJ14003

    Abstract: MJ14001 MJ14002 mj1400x transistor pnp 3015
    Text: MJ14001 PNP , MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors http://onsemi.com Designed for use in high−power amplifier and switching circuit applications. • High Current Capability − • •


    Original     		PDF MJ14001 MJ14002* MJ14003* MJ14001/D MJ14003 MJ14001 MJ14002 mj1400x transistor pnp 3015

    MJ14003 equivalent

    Abstract: BU108 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* PNP MJ14001 MJ14003* High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes


    Original     		PDF MJ14002* MJ14001 MJ14003* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJ14003 equivalent BU108 BU326 BU100

    Untitled

    Abstract: No abstract text available
    Text: MJ14001 PNP , MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors Designed for use in high−power amplifier and switching circuit applications. Features • High Current Capability − IC Continuous = 60 Amperes


    Original     		PDF MJ14001 MJ14002* MJ14003* MJ14002/03 MJ14001/D

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    mj150* darlington

    Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
    Text: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35


    Original     		PDF 2N3055A, MJ15015, MJ15016 2N3055, MJ2955 2N3442 2N3771, 2N3772 2N3773* 2N6609 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp

    2N3773 NPN Audio Power AMP Transistor

    Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
    Text: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25


    Original     		PDF OT-223 O-225AA O-126) O-220AB O-220 O-218 O-247 O-264 O-204AA O-204AE 2N3773 NPN Audio Power AMP Transistor 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006

    BU108

    Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS


    Original     		PDF 2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801

    BU108

    Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A


    Original     		PDF BUV20 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC194 transistor Bc 574 2SC1419 BU326 BU100

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


    Original     		PDF Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033

    automotive ignition tip162

    Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —


    Original     		PDF BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000

    2SC1419

    Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.


    Original     		PDF MJE350 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SC1419 TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108

    Motorola case 77

    Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc


    Original     		PDF MJE200* MJE210* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola case 77 2N3055 BU108 2sc15 bdw93c applications BU326 BU100

    2SA1046

    Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


    Original     		PDF BD437 BD441. BD438 BD440 BD442 TIP73B TIP74 TIP74A TIP74B TIP75 2SA1046 BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903

    J14002

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* PNP MJ14001 MJ14003* High-Current Complementary Silicon Power Transistors . . . designed for use in high-power amplifier and switching circuit applications, • • • High Current Capability — lc Continuous = 60 Amperes


    OCR Scan     		PDF MJ14002* MJ14001 MJ14003* MJ14002 MJ14003 10tol00 J14002

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB 37E LTD 0133167 » SEMELAB J U L 0 6 1988 MJ14000 MJ14002 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for switching applications and high power amplifier circuits M E C H A N IC A L D A T A Dim ensions in mm FEATURES « -1 6 • 15 A lo w v ce|sat,


    OCR Scan     		PDF MJ14000 MJ14002 MJ14000 00002E7

    mj14003

    Abstract: mj14002 J14002
    Text: MOTOROLA Order this document by MJ14001/D SEMICONDUCTOR TECHNICAL DATA NPN M J1 4 002* PNP High-C urrent Com plem entary Silicon Power Transistors M J14001 M J1 4 003* . . . designed for use in high-pow er amplifier and switching circuit applications, •


    OCR Scan     		PDF MJ14001/D J14001 MJ14001 97A-05 O-204AE mj14003 mj14002 J14002

    diode t03

    Abstract: MJ150 mj15024 MJ2955 CV9936 T0220H dyv32 MJ15022 MJ802 MJ4502 transistor mj11032
    Text: 4ÔE T> • Ö1331Ö7 000045Ö 7TT SEMELAB ISMLB ] SEMELAB LT]>7V*«i HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code Type Number BYV32-150M-IS0 HR BYV32-2Q0M-IS0 HR I1YV32-200RM-IS0 HR BYV32-50M-IS0 HR BYV34-3ÜOM-ISO HR BYV34-400M-Is0 HR


    OCR Scan     		PDF B1331Ã Q00045Ã BYV32-150M-IS0 BYV32-200M-ISO YV32-200RM-ISO BYV32-50M-IS0 BYV34-300M-IS0 BYV34-400M-Is0 BYV34-500M-Is0 BYW29-100M-Is0 diode t03 MJ150 mj15024 MJ2955 CV9936 T0220H dyv32 MJ15022 MJ802 MJ4502 transistor mj11032

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


    OCR Scan     		PDF MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"

    mpsu57 cross

    Abstract: No abstract text available
    Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s tf ps ps Max Max MHz Min Pd (Case) Watts @ 25°C h ^FE Min/Max @ lc Amp MPSU60


    OCR Scan     		PDF MPSU10 MPSU02 MPSU60 MPSU52 MPSU03 MPSU04 MPSU01 MPSU51 MPSU01A MPSU51A mpsu57 cross