MJ140 Search Results

MJ140 Datasheets (50)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MJ14000	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=70 / Hfe=15 / fT(Hz)=- / Pwr(W)=300	Original	PDF	10.62KB	1
MJ14000	Advanced Semiconductor	RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE	Scan	PDF	177.98KB	1
MJ14000	Diode Transistor	Transistor Short Form Data	Scan	PDF	75.59KB	1
MJ14000	Motorola	European Master Selection Guide 1986	Scan	PDF	57.68KB	1
MJ14000	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	237.02KB	6
MJ14000	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	88.68KB	1
MJ14000	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	80.38KB	1
MJ14000	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	152.91KB	1
MJ14000	Semelab	Bi-polar Transistors (CECC and High Rel) & High Energy	Scan	PDF	42.25KB	1
MJ14001	Motorola	60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=70 / Hfe=100typ / fT(Hz)=- / Pwr(W)=300	Original	PDF	246.22KB	6
MJ14001	On Semiconductor	MJ14001 - TRANSISTOR 60 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA, CASE 197A-05, TO-3, TO-204, 2 PIN, BIP General Purpose Power	Original	PDF	88.98KB	5
MJ14001	On Semiconductor	High Current Complementary Silicon Power Transistors - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=70 / Hfe=100typ / fT(Hz)=- / Pwr(W)=300	Original	PDF	117.59KB	8
MJ14001	Semelab	Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=70 / Hfe=100typ / fT(Hz)=- / Pwr(W)=300	Original	PDF	11.45KB	1
MJ14001	Advanced Semiconductor	RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE	Scan	PDF	177.98KB	1

MJ14001	Diode Transistor	Transistor Short Form Data	Scan	PDF	60.83KB	1
MJ14001	Motorola	European Master Selection Guide 1986	Scan	PDF	57.68KB	1
MJ14001	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	237.02KB	6
MJ14001	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	88.68KB	1
MJ14001	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	80.38KB	1
MJ14001	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	151.05KB	1

MJ140 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MJ14002 Abstract: MJ14001 MJ14003 COMPLEMENTARY SILICON POWER TRANSISTORS 200CT Contextual Info: MOTOROLA Order this document by MJ14001/D SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* PNP MJ14001 MJ14003* High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes	Original	MJ14001/D* MJ14001/D MJ14002 MJ14001 MJ14003 COMPLEMENTARY SILICON POWER TRANSISTORS 200CT	PDF
2n1243 Abstract: 2N1242 PB6025A bsv82 HA7528 2SA13590 2SA1361 TO4 package 2SB9050 2n1239 Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 20 Ic Max (A) V(BR)CEO (V) fT hFE Min Max (Hz) ICBO Max (A) tr Max (8) tf Max (8) Po Max (W) Toper Max (Oe) Package Style >= 50 A, (Cont'd) SDT3901 SDT3602 SDT3602 SDT3902 SDT3902 SDT3902 MJ14001 SDT3603	Original	10uAxial 220AB 2n1243 2N1242 PB6025A bsv82 HA7528 2SA13590 2SA1361 TO4 package 2SB9050 2n1239	PDF
MJ14001 Contextual Info: MJ14001 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	MJ14001 O204AE) 1-Aug-02 MJ14001	PDF
Contextual Info: MJ14000 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	MJ14000 O204AE) 17-Jul-02	PDF
Contextual Info: MJ14003 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	MJ14003 O204AE) 17-Jul-02	PDF
Contextual Info: MJ14003 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	MJ14003 O204AE) 18-Jun-02	PDF
mj14002 Abstract: mj14003 Contextual Info: MJ14001 PNP , MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors http://onsemi.com Designed for use in high−power amplifier and switching circuit applications. • High Current Capability − • •	Original	MJ14001 MJ14002* MJ14003* mj14002 mj14003	PDF
MJ14002 Contextual Info: MJ14002 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	MJ14002 O204AE) 1-Aug-02 MJ14002	PDF
MJ14003 Abstract: MJ14001 MJ14002 mj1400x transistor pnp 3015 Contextual Info: MJ14001 PNP , MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors http://onsemi.com Designed for use in high−power amplifier and switching circuit applications. • High Current Capability − • •	Original	MJ14001 MJ14002* MJ14003* MJ14001/D MJ14003 MJ14001 MJ14002 mj1400x transistor pnp 3015	PDF
1501-33 Abstract: 2N5686 2N5860 2N5745 45020 2N5301 2N5303 2N5880 2N5881 2N5882 Contextual Info: Typ#* PNP Compls- VCEUSIM lc mont Voltt) M u 2N5881 2N5882 2NS879 2NS880 2N5301 2NS302 2N5303 2N5885 2N5886 2N6326 2N6327 2N632B MJ802 MJ3771 MJ3772 2N4398 2N4399 2N5745 2N5883 2N5884 2H6329 2N6330 2N6331 2N5685 2N5686 MJ14000 MJ14002 2N5683 2N5684 MJ14001	OCR Scan	Tc-25Â 2N5881 2N5882 2NS879 2N5880 2N5301 2NS302 2N5303 2N5885 2N5886 1501-33 2N5686 2N5860 2N5745 45020	PDF
mj14003 Abstract: mj14002 J14002 Contextual Info: MOTOROLA Order this document by MJ14001/D SEMICONDUCTOR TECHNICAL DATA NPN M J1 4 002* PNP High-C urrent Com plem entary Silicon Power Transistors M J14001 M J1 4 003* . . . designed for use in high-pow er amplifier and switching circuit applications, •	OCR Scan	MJ14001/D J14001 MJ14001 97A-05 O-204AE mj14003 mj14002 J14002	PDF
J14002 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* PNP MJ14001 MJ14003* High-Current Complementary Silicon Power Transistors . . . designed for use in high-power amplifier and switching circuit applications, • • • High Current Capability — lc Continuous = 60 Amperes	OCR Scan	MJ14002* MJ14001 MJ14003* MJ14002 MJ14003 10tol00 J14002	PDF
MJ14003 equivalent Abstract: BU108 BU326 BU100 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* PNP MJ14001 MJ14003* High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes	Original	MJ14002* MJ14001 MJ14003* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJ14003 equivalent BU108 BU326 BU100	PDF
Contextual Info: MJ14001 PNP , MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors Designed for use in high−power amplifier and switching circuit applications. Features • High Current Capability − IC Continuous = 60 Amperes	Original	MJ14001 MJ14002* MJ14003* MJ14002/03 MJ14001/D	PDF

Contextual Info: MJ14001 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	MJ14001 O204AE) 18-Jun-02	PDF
MJ14000 Contextual Info: MJ14000 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	MJ14000 O204AE) 18-Jun-02 MJ14000	PDF
1000 volt npn Abstract: MJ14001 equivalent MJ14002G MJ14001 MJ14001G MJ14002 MJ14003 Contextual Info: MJ14001 PNP , MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors Designed for use in high−power amplifier and switching circuit applications. Features • High Current Capability − IC Continuous = 60 Amperes	Original	MJ14001 MJ14002* MJ14003* MJ14002/03 MJ14001/D 1000 volt npn MJ14001 equivalent MJ14002G MJ14001 MJ14001G MJ14002 MJ14003	PDF
MJ14002 Abstract: MJ14002 TRANSISTOR MJ14002G MJ14001 MJ14001G MJ14003 junction to case thermal resistance of to-3 package Contextual Info: MJ14001 PNP , MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors Designed for use in high−power amplifier and switching circuit applications. Features • High Current Capability − IC Continuous = 60 Amperes	Original	MJ14001 MJ14002* MJ14003* MJ14002/03 MJ14002 MJ14002 TRANSISTOR MJ14002G MJ14001 MJ14001G MJ14003 junction to case thermal resistance of to-3 package	PDF
MJ14003 Contextual Info: MJ14003 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	MJ14003 O204AE) 1-Aug-02 MJ14003	PDF
Contextual Info: MJ14002 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	MJ14002 O204AE) 18-Jun-02	PDF
Contextual Info: MJ14002 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	MJ14002 O204AE) 17-Jul-02	PDF
mj14000 Contextual Info: MJ14000 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	MJ14000 O204AE) 1-Aug-02 mj14000	PDF
MJ14002 Abstract: MJ14003 MJ14003 equivalent MJ14001 Mj140 Contextual Info: ON Semiconductort NPN High-Current Complementary Silicon Power Transistors MJ14002 * . . . designed for use in high–power amplifier and switching circuit applications, MJ14003 * PNP MJ14001 • High Current Capability — • • *ON Semiconductor Preferred Device	Original	MJ14002 MJ14003 MJ14001 r14525 MJ14001/D MJ14002 MJ14003 MJ14003 equivalent MJ14001 Mj140	PDF
Contextual Info: MJ14001 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	MJ14001 O204AE) 17-Jul-02	PDF

MJ140 Search Results

MJ140 Datasheets (50)

MJ140 Datasheets Context Search

MJ14002

2n1243

MJ14001

mj14002

MJ14002

MJ14003

1501-33

mj14003

J14002

MJ14003 equivalent

MJ14000

1000 volt npn

MJ14002

MJ14003

mj14000

MJ14002