2N6715
Abstract: MPS6715 HOTS
Text: 2N6715/PN6715/MPS6715 NATL S E M I CO ND n r Sç Cr Rh Ef T tE f DI 11E » | • bSG113D 0 2 * 5- | I . 0 3 7 2 ^QC- C Tl National Semiconductor 2N6715 t PN6715 MPS6715 J^ ^*'237 El^ "92 Bc Bc TL/G/10100-S 'OS ebc TUG/10100-1 TUG/10100-4 NPN General Purpose Amplifier
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hSG113D
2N6715
O-237
MPS6715
T0-22ME
TL/G/10100-8
TUG/10100-1
TL/G/10100-4
10mAdc,
2N6715
MPS6715
HOTS
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B5G1
Abstract: NDC652P Supersot 6
Text: M arch 1996 National f i Semiconductor" NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description • -2.4A, -30V. RDSI0Nl = 0.18 fi @ VGS = -4.5V -10V. >V„ These P-Channel logic level enhancement mode power field effect transistors are produced using
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NDC652P
LS01130
B5G1
NDC652P
Supersot 6
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diode 6t6
Abstract: NDC632P
Text: National June 1996 Semiconductor" NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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NDC632P
Supe202
diode 6t6
NDC632P
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bu 517
Abstract: NDS352P
Text: March 1996 N ational Semiconductor" NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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NDS352P
b50113D
003T74G
bSD113D
bSD113D
317H2
bu 517
NDS352P
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2N1000
Abstract: M2N7002 2N7002 "ON Semiconductor" 2N7002 2n7000 transistor 2n7002 2N700 national 2N7002 N7000 2N7000 MOSFET
Text: N ational Sem iconductor” 6 N ovem ber 1995 > 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel e nhancem ent m od e fie ld effect tran sisto rs are produced using Nationals proprietary,
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2N7000
2N7002
NDS7002A
400mA
NDS7000A
OT-23,
2N1000
M2N7002
"ON Semiconductor" 2N7002
transistor 2n7002
2N700
national 2N7002
N7000
2N7000 MOSFET
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D40 transistor
Abstract: transistor 5167 PZTA14 5Ci transistor
Text: MPSA14 I MMBTA14 / PZTA14 & D iscrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r " PZTA14 MMBTA14 MPSA14 SOT-23 SOT-223 M ark: 1 N NPN Darlington Transistor T h is d e v ice is d e s ig n e d for a p p lica tio ns requiring extrem ely
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PZTA14
OT-223
00407bD
L5D1130
004G7bl
D40 transistor
transistor 5167
PZTA14
5Ci transistor
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capacitor discharge ignition
Abstract: NB313Y "capacitor discharge ignition" NA61W NA62 Ignition Transformer NB022EY NB123EY NB111 NB32
Text: NATL SENICOND -CDISCRETE> NATL "äfl SEM ICOND, DF|bSD1130 DISC R ETE 28C 3 5 5 7 7 V/WX National MM Semiconductor J 3 - / / NA61 (NPN) 4 .5 A m p c o m p le m e n ta ry p o w e r tr a n s is to r s NA62(PNP) feature s CO < z IT ! packages and lead coding
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003SS77
O-126
O-220
IO11F
NB022EY
NB123EY
NR001E
NB113EY
NB111EY
NB121EY
capacitor discharge ignition
NB313Y
"capacitor discharge ignition"
NA61W
NA62
Ignition Transformer
NB022EY
NB123EY
NB111
NB32
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BC338 hie hre hfe
Abstract: BD371C-10 bc368 hie BD370B-10 BD371D BD371C BF936 BF494 BF495 b055
Text: National Bipolar Pro Electron Series Semiconductor c/> Case Style VCEO VeBO V (V) Min Min Ices ’ •cBOg. (nA) Max 50* TO-92 (97) 60* BC327-10 TO-92 (97) 50* 45 5 100* 45 40 63 BC327-16 TO-92 (97) 50* 45 5 100* 45 40 100 TO-92 (97) 50* TO-92 (97) 30' TO-92
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b501130
bS01130
T-03-01
BC338 hie hre hfe
BD371C-10
bc368 hie
BD370B-10
BD371D
BD371C
BF936
BF494
BF495
b055
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MMPQ3467
Abstract: SOIC-16 TN3467A
Text: S e m i c o n d u c t o r ' TN3467A MMPQ3467 TN3467AI MMPQ3467 & D iscrete P O W E R & S ig n a l Technologies National SOIC-16 PNP Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d s a tu rated sw itching app lication s at currents to 8 0 0 m A . S o u rc e d fro m P ro c ess 7 0 .
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TN3467A
MMPQ3467
O-226
SOIC-16
S0113D
D04DbMfl
MMPQ3467
SOIC-16
TN3467A
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B5170
Abstract: DIODE WJ SOt23 transistor BS170 MMBF170 A9 SOT-23 BS170 16 sot 23 transistor MOSFET BS170
Text: ë> N a t io n al Semiconductor" April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products
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BS170
MMBF170
500mA
MMBF170
OT-23,
bSG113D
B5170
DIODE WJ SOt23
transistor BS170
A9 SOT-23
16 sot 23
transistor MOSFET BS170
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B23 zener diode
Abstract: zener Diode B23 NDP505A NDP506A transmitter and receiver MINI CAMERA HRD-B30M115 B23 j ZENER DIODE NDP505B NDP506B
Text: National Semiconductor Ontnhfir 1QQ1 NDP505A/NDP505B, NDP506A/NDP506B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high
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NDP505A/NDP505B,
NDP506A/NDP506B
hSG113D
B23 zener diode
zener Diode B23
NDP505A
NDP506A
transmitter and receiver MINI CAMERA
HRD-B30M115
B23 j ZENER DIODE
NDP505B
NDP506B
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mpsa92 "sot23"
Abstract: mpsa92
Text: MPSA92 / MMBTA92 / PZTA92 Discrete POWER & Signal Technologies National e ? Semiconductor~ MMBTA92 MPSA92 PZTA92 SOT-23 SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings*
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MPSA92
MMBTA92
PZTA92
MPSA92
MMBTA92
OT-23
OT-223
bSQ113D
DD407
mpsa92 "sot23"
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mmbt2906a
Abstract: MMBTL51 MMBT2904A
Text: ^Sem iconductor SEMICOND Surface Mount Transistors General Purpose Amplifiers and Switches—PNP MMBT 2904 TO-236 49 60 40 5 MMBT2904A TO-236 (49) 60 40 5 TO-236 (49) 60 MMBT2905A TO-236 (49) 60 MMBT 2906 TO-236 (49) 60 MMBT 2906A TO-236 (49) 60 MMBT 2905
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O-236
mmbt2906a
MMBTL51
MMBT2904A
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LC 500-S
Abstract: 2N5551 MMBT5551 S4002
Text: 2N5551 I MMBT5551 & D iscrete P O W ER & S ig n a l T echnologies _ National S e m i c o n d u c t o r ” MMBT5551 2N5551 NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d for g en e ral pu rp ose high voltage am plifiers an d g a s d isc h a rg e d isp la y driving. S o u rc e d from P ro c e s s 16.
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b5G1130
LC 500-S
2N5551
MMBT5551
S4002
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NDS9953A
Abstract: No abstract text available
Text: Na t i o n a l Semiconductor" M ay 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS9953A
bSG113D
NDS9953A
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