MOS 1A Search Results

101490

Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

QS6M4

Abstract: TSMT6 Pch MOS FET m04 fet
Contextual Info: QS6M4 Transistors 2.5V Drive Nch+Pch MOS FET QS6M4 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOS FET with a Nch MOS FET in a single TSMT6 package.

Pch MOS FET

Abstract: US6M2 TUMT6
Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOS FET US6M2 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. (2) (1) (3) 1pin mark 0.2 1.7 zFeatures 1) Nch MOS FET and Pch MOS FET are put in TUMT6 package.

2761 l catalog

Abstract: B-3300 NL-2761 D-82178 k 2761 relais
Contextual Info: Short Form Catalog MOS - Relays Optical www.ZETTLERelectronics.com MOS- Relays A member of the ZETTLER Group ZETTLER electronics hat sein Relaisprogramm mit MOS-Relais des taiwanesischen Herstellers ECE komplettiert! MOS-Relais sind eine spezielle Form von Halbleiterrelais. Im Ausgangskreis ermöglichen

Contextual Info: APT609RKVR 600V Ω 9.0Ω 1A POWER MOS V TO-220 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

SSM3K7002

Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
Contextual Info: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,

CP Clare RELAY

Abstract: triac control 8-pin Solid State Switches LCC Triac PLA power relay Clare Relay scr 1A fet mos triac catalog triac control 16 pin
Contextual Info: Clare°ofeafeifi] Chart Solid State Switches AC POWER SWITCHES SPECIALTYi pro ducts! 1A, 2A MOS FET 400 .250 7 2 1 3750 YES ULBABT 6 PIN, 8 PIN XCA 1A MOS FET 300 .100 25 5 1 3750 YES UL, BABT 6 PIN, 8 PIN OMA 1A, 2A MOS FET 300 .100 25 10 2 1500 YES UL.BABT

2SK1377

Abstract: 2SK1349 2SK1357 2SK1356 2SK1373 2SK1333 2sk1346 2SK1375 2SK1348 2SK1351
Contextual Info: f m it e m £ H y & tit Ü % K 2SK1333 X % V* V * ft (V) Motor-D, DDC MOS N B 500 DSS ±20 S SW-Reg, DDC MOS N E 200 DSS ±20 BÍL SW-Reg, DDC MOS N E 200 DSS ±20 BÍL Motor/Relay-D MOS N E 60 DSS ±20 2SK1337 BÎL Motor/Relay-D MOS ±20 BÎL SW-Reg, DDC

pa1556h

Abstract: pa1556ah PA1520H pa1572h PA1523H PA1526H PA1601 pa1603cx PA1500H PA1501H
Contextual Info: - 172 - f m £ tt: m € & m s 1 . ft * Ê il’ K V n * (V) ß PA573T NEC MOS P E - 30 D S S ±7 U PA602T NEC MOS N E 50 D SS ±20 ß PA603T NEC MOS P E - 50 D S S ±16 SW ß PA606T NEC sw MOS N E 50 D S S ±20 U PA607T NEC SW MOS P E - 50 D SS ±16

2SK2482

Abstract: IEI-1213 MEI-1202 MF-1134 MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2482 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2482 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. 4 20.0±0.2

2sk2137

Abstract: IEI-1213 MEI-1202 MF-1134 nec 2508 DI1010 TC-2508 TEA-1037
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2137 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2137 is N-Channel MOS Field Effect Transistor de- in millimeters signed for high voltage switching applications. 10.0±0.3

2SK2478

Abstract: IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2478 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3

2SK2478

Abstract: IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2478 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

2SK1953

Abstract: transistor 7905 nec 7905 7905 Nec MEI-1202 TEA-1035 TC-2447
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1953 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1953 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in m illim eters designed fo r high voltage switching applications.

2sk3808

Abstract: 2SK3807 2sk3805 2sk3806 Shortform Transistor Guide sp8m3 RSQ035P03 RTQ035P02 FET SP8M4 sp8m5
Contextual Info: Transistors MOS FET 1. Can be used with automatic placement machines. Available in a wide variety of packages. Like bipolar transistors, taped MOS FETs are available for assembly lines using automatic placement equipment. 2. MOS FETs operating from 4 volts and 2.5 volts

d1308

Abstract: D1297 2SK2355 2SK2356 2SK2356-Z MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel in millimeter MOS Field Effect Transistor designed for high voltage switching

2SK1758

Abstract: 2SK1758 E
Contextual Info: DATA SHEET NEC Æ 1 H MOS B FIELD 1 EFFECT POWER TRANSISTOR 2SK1758 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1758 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in m illim eters designed for high voltage switching applications.

QS6U24

Contextual Info: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

Contextual Info: TPCP8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type U-MOS IV / U-MOS III TPCP8402 Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 • • • Low drain-source ON resistance

Contextual Info: QS5U28 QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U28 combines Pch MOS FET with