MOSFET 1000 VOLTS Search Results

AN569

Abstract: MTW10N100E
Contextual Info: MTW10N100E Preferred Device Power MOSFET 10 Amps, 1000 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

adc 0808 internal circuit diagram

Abstract: TB-547 AN569 MTW6N100E MTW6N100
Contextual Info: MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

AN569

Abstract: MTW10N100E
Contextual Info: MTW10N100E Preferred Device Power MOSFET 10 Amps, 1000 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

adc 0808 internal circuit diagram

Contextual Info: MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

Contextual Info: Standard Power MOSFET IXTH / IXTM 5N100 IXTH / IXTM 5N100A VDSS ID25 RDS on 1000 V 1000 V 5A 5A 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000

Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.41 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ

5n100

Abstract: 5N100A
Contextual Info: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM

IXTH5N100A

Abstract: gs 1117 ax
Contextual Info: inixY S Standard Power MOSFET IXTH/IXTM 5N100 IXTH/IXTM 5N100A VDSS ^D25 1000 V 1000 V 5A 5A p DS on 2.4 Q 2.0 Q, N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS ^ =25°C to150°C 1000 V VoO R ^ = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 1000

24N100

Abstract: 23N10 125OC
Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Maximum Ratings 01N100 1000 V 1000 V Continuous ±20 V VGSM

MTC3N100E

Abstract: SHD218414 SHD218414A SHD218414B
Contextual Info: SHD218414 SHD218414A SHD218414B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 1000 Volt, 3.0 Ohm, 3A MOSFET • Electrically Isolated, Hermetically Sealed • Electrically Equivalent to MTC3N100E

01n100

Abstract: 4506v iXTY01N100
Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20

Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20

1N100

Contextual Info: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM

Contextual Info: SENSITRON SEMICONDUCTOR SHD218414 SHD218414A SHD218414B TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 3.0 Ohm, 3A MOSFET œ Electrically Isolated, Hermetically Sealed œ Electrically Equivalent to MTC3N100E MAXIMUM RATINGS

Contextual Info: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM

Contextual Info: SENSITRON SEMICONDUCTOR SHD218414 SHD218414A SHD218414B TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 3.0 Ohm, 3A MOSFET œ Electrically Isolated, Hermetically Sealed œ Electrically Equivalent to MTC3N100E MAXIMUM RATINGS

30n100

Abstract: IXTN30N100L 30n10
Contextual Info: Linear Power MOSFET IXTN30N100L With Extended FBSOA VDSS ID25 D = 1000 = 30 ≤ 0.45 RDS on N-Channel Enhancement Mode V A Ω G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous

Contextual Info: High Voltage MOSFET IXTA2N100 IXTP2N100 N-Channel Enhancement Mode v DSS ^D25 P DS on =1000 V =2A =7Q 9 Symbol Test Conditions V ¥ dss Tj =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 MQ 1000 V Continuous i2 0 V Transient 130 V VGS v GSM ^D25

APT1004RGN

Contextual Info: APT HERMETIC MOSFET PRODUCTS BV DSS Volts 1000 800 600 500 4UC 1000 800 R ds o n Ohms lD(Cont.) CiSS(pF) Qg(nC) A PT New Product Package Am ps Watts Typ Typ Part No. Comments Style 1.100 1.300 9.5 250 2460 90 APT1001R1HN 90 250 2460 90 APT1001R3HN 0.750

IRFAG50

Abstract: SHD218508 SHD218508A SHD218508B shd2188
Contextual Info: SHD218508 SHD218508A SHD218508B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2023, REV. Formerly Part Number SHD2188/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 1000 Volt, 2.0 Ohm, 5.6A MOSFET • • • • Hermetic Ceramic Package Fast Switching

shd2188

Abstract: sensitron
Contextual Info: SHD218508 SHD218508A SHD218508B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2023, REV. Formerly Part Number SHD2188/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 2.0 Ohm, 5.6A MOSFET œ Hermetic Ceramic Package œ Fast Switching œ Low RDS on

Contextual Info: SHD218508 SHD218508A SHD218508B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2023, REV. Formerly Part Number SHD2188/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 2.0 Ohm, 5.6A MOSFET œ Hermetic Ceramic Package œ Fast Switching œ Low RDS on

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000