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    MOSFET 1N60 Search Results

    MOSFET 1N60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK401G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Visit Toshiba Electronic Devices & Storage Corporation
    TCK420G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS PDF

    power mosfet 600v

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60P Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged


    Original     		1N60P 1N60P QW-R502-634 power mosfet 600v PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


    Original     		1N60Z 1N60Z QW-R502-724 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


    Original     		1N60Z 1N60Z QW-R502-724 PDF

    marking 724 diode sot-363

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


    Original     		1N60Z 1N60Z QW-R502-724 marking 724 diode sot-363 PDF

    1n60

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		QW-R502-052 1n60 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		QW-R502-052 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		QW-R502-052 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		QW-R502-052 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091. PDF

    UTC1N60

    Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		OT-223 O-220 O-220F O-251 O-252 QW-R502-052 UTC1N60 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091 PDF

    1n60ag

    Abstract: 1N60A
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091 1n60ag PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091 PDF

    1N60AL

    Abstract: 1N60A UTC 1N60AL 1N60AL-T92-B
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091 1N60AL UTC 1N60AL 1N60AL-T92-B PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		1N60-KW 1N60-KW QW-R205-054 PDF

    mosfet 1N60

    Abstract: 1n60 1N60 TO92
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		QW-R502-052 mosfet 1N60 1n60 1N60 TO92 PDF

    1N60AL

    Abstract: UTC 1N60AL 1N60A 600v 2A ultra fast recovery diode power mosfet 600v 1N60-A
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091 1N60AL UTC 1N60AL 600v 2A ultra fast recovery diode power mosfet 600v 1N60-A PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		QW-R502-052 PDF

    1n60ag

    Abstract: 1N60A 1n60al T92 DIODE XT92
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		1N60A 1N60A QW-R502-091 1n60ag 1n60al T92 DIODE XT92 PDF