MOSFET 635 Search Results

mosfet 1200V

Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V

fdd7n25

Abstract: fdd7n25lz
Contextual Info: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 m Description Features UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

CMF20120D

Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode

Contextual Info: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 mΩ Features Description • RDS on = 430 mΩ (Typ.) @ VGS = 10 V, ID = 3.1 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

40N60C

Abstract: ISOPLUS247
Contextual Info: Advanced Technical Information CoolMOS Power MOSFET in ISOPLUS247TM Package IXKR 40N60C VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM E153432 MOSFET Symbol

TO247AD

Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
Contextual Info: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions

FIL-3C

Abstract: to-92 mosfet 13T13
Contextual Info: SÖE » SEP1TECH CORP • 013^13^ ODOBTìl OSO POWER MOSFET IN HERMETIC ISOLATED T0257AB PACKAGE SM8F13* SM8F33* SM8F23* SM8F43* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low

Contextual Info: SENTECH C OR P SflE » • filBS lBS POWER MOSFET’s IN HERMETIC 12 PIN ISOLATED PACKAGE □ D 0 2 cm SM4F151S* SM4F351S* 341 SM4F251S* SM4F451S* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low

Contextual Info: SEMTECH CORP SfiE D 6 1 3 ^ 1 3 ^ 0 D 03003 470 DUAL POWER MOSFET’s IN HERMETIC 6 PIN ISOLATED PACKAGE SET SM6F151* SM6F251* SM6F351* SM6F451* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low

PHILIPS MOSFET MARKING

Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET

Contextual Info: INN20x3-20x5 InnoSwitch-CH Family Off-Line CV/CC Flyback Switcher IC with Integrated MOSFET, Synchronous Rectification and Feedback Product Highlights Highly Integrated, Compact Footprint • Incorporates flyback controller, 650 V MOSFET, secondary-side SR FET

EE1621

Contextual Info: INN20x3-20x5 InnoSwitch-CH Family Off-Line CV/CC Flyback Switcher IC with Integrated MOSFET, Synchronous Rectification and Feedback Product Highlights Highly Integrated, Compact Footprint • Incorporates flyback controller, 650 V MOSFET, secondary-side SR FET

mosfet K 2865

Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET

eft 317 transistor

Abstract: NUD3160 636 MOSFET TRANSISTOR MDC3105 SGD525 datasheet relay 346 766 IEC61000-4-4 MDC3105D NUD3105 Distributors and Sales Partners
Contextual Info: 5 V Relay Driver Socket 12 V Relay Driver Socket Bipolar Relay Driver Socket - NUD3105 MOSFET Relay Driver Socket - NUD3112 Water Valve Relay Vibrator Motor Microprocessor Microprocessor 24 V Relay Driver Socket MOSFET Relay Driver Socket - NUD3124 Window

Contextual Info: PD- 93898 PROVISIONAL IRF7451 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

Contextual Info: AOH3110 100V N-Channel MOSFET General Description Product Summary The AOH3110 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,

Qg (nC)

Abstract: AOH3110
Contextual Info: AOH3110 100V N-Channel MOSFET General Description Product Summary The AOH3110 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,

Contextual Info: SEMICONDUCTOR KMB010P30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly H suitable for Battery pack.

S 566 b

Abstract: IRF7471
Contextual Info: PD- 94036A IRF7471 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low Gate Impedance

Contextual Info: PD - 93886C IRF7460 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l l l Ultra-Low Gate Impedance

Contextual Info: PD- 93893A IRF7450 SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See App. Note AN1001

Contextual Info: PD- TBD FOR REVIEW ONLY PROVISIONAL IRF7450 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See

Contextual Info: PD- 93951A IRF7469 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l l l Ultra-Low Gate Impedance

irf7452

Contextual Info: PD- 93897 IRF7452 SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001