MOTOD010 Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54402A Advance Information 4M x 1 CMOS Dynamic RAM Static Column The M C M 54402A is a 0.7n C M OS high-speed dynam ic random access memory. It is organized as 1,048,576 four-bit w ords and fabricated with CM OS siiicon-gate process

60L256

Abstract: 60L256A
Contextual Info: SEMICONDUCTOR TECHNICAL DATA Advance Information MCM60L256A-C 3 2 K x 8 Bit CM O S Static Random A ccess Memory F PACKAGE SOQ C A S E 761H Extended Temperature Range: - 4 0 to 8 5 °C The MCM60L256A-C is a 262,144 bit low-power static random access memory orga­

36L100

Contextual Info: M OTOROLA • SEMICONDUCTOR TECHNICAL DATA 1M x 36 Bit Dynamic Random Access Memory Module The MCM36100 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead single-in-line memory module (SIMM) consisting of eight MCM54400A DRAMs housed in standard

Contextual Info: IV I K J I U n U L M SEMICONDUCTOR TECHNICAL DATA MCM40100 MCM40L100 1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The M C M 40100 and M C M 40L100 are 40M dynam ic random access m em ory DRAM m odules organized as 1,048,576 x 40 bits. The m odule is a 72-lead single­

TFK 637

Abstract: MCM60L256AFV10 TFK 105 60L25 60L256
Contextual Info: SEMICONDUCTOR TECHNICAL DATA MCM60L256A-V Advance Information 32K x 8 Bit CMOS Static Random Access Memory F PACKAGE SOQ CASE 761H Extended Temperature Range: - 4 0 to 105°C The MCM60L256A-V is a 262,144 bit low-power static random access memory orga­ nized as 32,768 words of 8 bits, fabricated using silicon-gate CMOS technology. Static

MCM54100A-80

Abstract: cm54100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54100A-C Advance Information 4M x 1 CMOS Dynamic RAM Page Mode T h e M C M 5 4 1 0 0 A -C is a 0 .7 |i C M O S h ig h -s p e e d d y n a m ic ra n d o m a c c e s s m em o ry. It is o rg a n iz e d a s 4 ,1 9 4 ,3 0 4 o n e -b it w o rd s a n d fa b ric a te d w ith C M O S s iiic o n -g a te p ro ­

TAA 310A

Abstract: W25Q MCM54101AZ80 DRAM nibble mode
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54101A Advance Information 4M x 1 CMOS Dynamic RAM Nibble Mode The MCM54101A is a 0.7n CMOS high-speed dynamic random access memory. It is organized as 4,194,304 one-bit words and fabricated with CMOS silicon-gate process

514256A

Abstract: MCM32256AS70
Contextual Info: MU1UHULA • SEMICONDUCTOR TECHNICAL DATA MCM32256 MCM32L256 256K x 32 Bit Dynamic Random Access Memory Module T he M CM 32256 is an 8M dynam ic random access mem ory DRAM module organized as 262,144 x 32 bits. The module is a 72-lead single-in-line mem ory

A1HV

Abstract: motorola sje
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM36256 256K x 36 Bit Dynamic Random Access Memory Module S PACKAGE SIMM MODULE CASE 866-02 The MCM36256 is a 9M dynamic random access memory DRAM module organized as 262,144 x 36 bits. The module is a 72-lead single-in-line memory module

IC CD 4440 pin diagram

Abstract: GZ150 MCM4L4400-70 MCM44400N70 MCM44400N-60
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM44400 MCM4L4400 Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode The MCM44400 is a 0.8n CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate

motorola 16M CMOS DRAM

Abstract: mcm517400
Contextual Info: • SEMICONDUCTOR TECHNICAL DATA MCM81600 MCM8L1600 Product Preview 16M x 8 Bit Dynamic Random Access Memory Module The MCM81600 is a dynamic random access memory DRAM module organized as 16,777,216 x 8 bits. The module is a 30-lead single-in-line memory module

MCM511001AZ80

Abstract: CM511001 MCM511001AJ70 511001A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM511001A 1 M x 1 C M O S D ynam ic R A M Nibble M o d e P PACKAGE 300 MIL PLASTIC CASE 707A The MCM511001A is a 1.0/* CMOS high-speed, dynam ic random access memory. It is organized as 1,048,576 one-bit w ords and fabricated w ith CMOS silicon-gate process

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 4M x 8 Bit Dynamic Random Access Memory Module MCM84000 MCM8L4000 MCM84030 The M CM 84000 is a 32M dynam ic random access mem ory DRAM module organized as 4,194,304 x 8 bits. The m odule is a 30-lead single-in-line mem ory m odules (SIMM ) consisting of eight M C M 54100A DRAMs housed in a 20/26

Contextual Info: IV I W I V f l I V k f l SEMICONDUCTOR TECHNICAL DATA MCM32800 Product Preview 8M x 32 Bit Dynamic Random Access Memory Module The MCM32800 is a dynamic random access memory DRAM module organized as 8,388,608 x 32 bits. The module is a 72-lead single-in-line memory module

MCM54400AZ60

Abstract: mcm54400a MCM54400A-70 mcm54400az MCM5L4400AZ60 MCM5L4400A-70 mcm54400 MCM54400AN60
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A MCM5L4400A 1M x 4 CMOS Dynamic RAM Fast Page Mode The M C M 54400A is a 0 .7 ji CM OS high-speed dynam ic random access memory. It is organized as 1,048,576 four-bit w ords and fabricated with CMOS silicon-gate process

414256

Abstract: 414256 dram
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM414256 MCM41L4256 256K x 4 CMOS Dynamic RAM Page Mode The M C M 414256 is a 1 .On CM OS high-speed, dynam ic random access memory. It is organized as 262,144 four-bit w ords and fabricated with C M OS siiicon-gate process technology. Advanced circuit design and fine line processing provide high

MCM81430S80

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 8 Bit Dynamic Random Access Module MCM81430 MCM8L1430 The MCM81430 and MCM8L1430 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bits. The modules are 30-lead singlein-line memory modules (SIMM) consisting of two MCM54400AN DRAMs housed in

MCM8

Abstract: MCM81430S
Contextual Info: m vs i v i ìv L n SEMICONDUCTOR TECHNICAL DATA 1M x 8 Bit Dynamic Random Access Module MCM81000 MCM8L1000 The MCM81000 and MCM8L1000 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bits. The modules are 30-lead single-in-line memory modules (SIMM) or 30-lead single-in-line packages (SIP)

MCM32130SH60

Abstract: M5440 M54400 MCM32130-70
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM32130 MCM32L130 1M x 32 Bit Dynamic Random Access Memory Module The M CM 32130 is a 32M dynam ic random access m em ory DRAM module organized as 1,048,576 x 32 bits. The m odule is a 72-lead single-in-line m em ory

MCM514258AZ80

Abstract: MCM 2128 RAM MCM514258AZ70 MCM 2128 M514258A MCM5142S8A-70
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M CM 514258A 2 5 6 K x 4 C M O S Dynam ic R A M S tatic Column The MCM514258A is a 1.0/t CMOS high-speed, dynam ic random access m em ory. It is organized as 262,144 fo u r-b it w ords and fabricated w ith CMOS silicon-gate process tech­

54400AN

Contextual Info: i v iv s i v n v u n • SEMICONDUCTOR TECHNICAL DATA MCM40200 MCM40L200 2M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The M CM 40200 and M C M 40L200 are 80M dynam ic random access m em ory DRAM m odules organized as 2,097,152 x 40 bits. The module is a double-sided

SC63594FN

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MCM72100 Product Preview 1M x 72 Bit Dynamic Random Access Memory Module TOP VIEW The MCM72100 is a dynamic random access memory DRAM module organized as 1,048,576 x 72 bits. The module is a 100-lead single-in-line memory module

Contextual Info: SEMICONDUCTOR TECHNICAL DATA MCM36800 Product Preview 8M x 36 Bit Dynamic Random Access Memory Module S PACKAGE S IM M M O D U L E T O P V IE W The MCM36800 is a dynamic random access memory DRAM module organized as 8,388,608 x 36 bits. The module is a 72-lead single-in-line memory module

M514256B

Abstract: *m514256B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM514256B MCM51L4256B 256K x 4 Bit CMOS Dynamic RAM Page Mode The M C M 514256B is a 0.8n C M OS high-speed dynam ic random access memory. It is organized as 262,144 fo u r-bit words and fabricated w ith C M OS silicon-gate pro­