MSC1035 Search Results

MSC1035M

Abstract: TACAN A 107 transistor TACAN transistor
Contextual Info: MSC1035M NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 2L FLG DESCRIPTION: The ASI MSC1035M is Designed for Class C, DME/TACAN Applications up to 1150 MHz. 3 1 2 FEATURES: • Class C Operation • PG = 10.7 dB at 35 W/1150 MHz • Omnigold Metalization System

Contextual Info: SGS-THOMSON ittJÈTMDigl MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . oo:1 VSWR CAPABILITY i LOW THERMAL RESISTANCE . INPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

tp2304

Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12

S068

Abstract: 81035m MSC1035M MSC81035M
Contextual Info: MSC81035M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 35 W MIN. WITH 10.7 dB GAIN

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

81035M

Abstract: MSC81035M MSC1035M MSC1035
Contextual Info: MSC81035M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 35 W MIN. WITH 10.7 dB GAIN

Contextual Info: 7 SGS-THOMSON . MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • R E FR AC TO R Y /G O LD M ETALLIZATION ■ EM ITTER SITE BALLASTED ■ oo:1 VSWR CAPABILITY ■ ■ ■ ■ LOW THERM AL RESISTANCE INPUT M ATCHING O VER LA Y G EO M ETR Y M ETAL/C ER AM IC HERM ETIC PACKAGE

81035M

Contextual Info: fry SGS-THOMSON ^ 7# MSC81035M RF & MICROWAVE TRANSISTO RS _ AVIONICS APPLICATIONS • ■ ■ ■ ■ ■ ■ . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED oo:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY

MSC1035MP

Abstract: MSC81035MP
Contextual Info: MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 35 W MIN. WITH 10.7 dB GAIN

TPV3100

Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE

594 ph

Abstract: transistor vf12 ana 650 VF11 VF12 MSASC150H45LR VF10 1N6821 1N6821R IR100
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6821 (MSASC150H45L) Features • • • • • • Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

Contextual Info: fZ 7 S G S - T H O M S O N * 7 / . KfflD» IIL IO T Ê S K i MSC81035M RF & MICROWAVE TRANSISTORS _ AVIONICS APPLICATIONS i REFRACTORY/GOLD METALLIZATION • EMITTER SITE BALLASTED . o o :1 VSWR CAPABILITY . LOW THERMAL RESISTANCE . INPUT MATCHING

MSC81035MP

Abstract: MSC1035MP 81035MP
Contextual Info: MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 35 W MIN. WITH 10.7 dB GAIN

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition

1N6821

Abstract: 1N6821R IR100 MSASC150H45L MSASC150H45LR VF10 VF11
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6821 (MSASC150H45L) Features • • • • • • • • Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

81035MP

Abstract: MSC81035MP MSC1035MP MSC1035
Contextual Info: MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 35 W MIN. WITH 10.7 dB GAIN