MSM51V16160 Search Results

MSM51V16160F

Abstract: MSM51V16400 MSM51V16400F
Contextual Info: FEDD51V16400F-01 Issue Date: Sep. 29, 2003 OKI Semiconductor MSM51V16400F 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V16160F achieves high integration, high-speed operation, and

MSM51V16160F

Contextual Info: FEDD51V16160F-02 Issue Date: Aug. 16, 2002 OKI Semiconductor MSM51V16160F 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V16160F achieves high integration, high-speed operation, and

MSM51V16160DSL

Abstract: SOJ42-P-400-1
Contextual Info: Pr E2G0130-17-61 el im y 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. The MSM51V16160D/DSL achieves high integration, high-speed operation,

MSM51V16160DSL

Contextual Info: E2G0130-17-61 O K I Semiconductor MSM5 1V I6 1 6 0 P/PSL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N The M SM 51V16160D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon­ gate CMOS technology. The MSM51V16160D / DSL achieves high integration, high-speed operation,

MSM51V16160A

Contextual Info: O K I Semiconductor MSM51V16160A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16160A is

TSOP50

Contextual Info: O K I Semiconductor MSM51 V16160 _ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI6160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16160 achieves high integration, high-speed operation, and low-power

a11u

Abstract: taser circuit 42-PIN DD1752
Contextual Info: O K I Semiconductor MSM51V16160_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V16160 is OKI's CMOS silicon gate process technology.

Contextual Info: J2G0081-17-41 作成：1998年 1月 MSM51V16160B/BSL l 前回作成：1997年 5月 ¡ 電子デバイス MSM51V16160B/BSL 1,048,576-Wordx16-Bit DYNAMIC RAM：高速ページモード n 概要 MSM51V16160B/BSLはCMOSプロセス技術を用いた1,048,576ワ−ド×16ビット構成のダイナミックラ

MSM51V16160A

Contextual Info: O K I Semiconductor MSM51V16160A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16160A is

M5M23160

Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
Contextual Info: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1

Contextual Info: O K I Semiconductor MSM51V16160A 1,048,576-Word x 16-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM51V16160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16160A is

OKI MSM 505

Abstract: 51V16160
Contextual Info: O K I Semiconductor MSM51V16160A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16160A is

SOJ42

Contextual Info: J2G0130-17-61 作成：1998年 3月 ¡ 電子デバイス MSM51V16160D/DSL l MSM51V16160D/DSL 暫定 1,048,576-Wordx16-Bit DYNAMIC RAM：高速ページモード n 概要 MSM51V16160D/DSLはCMOSプロセス技術を用いた1,048,576ワ−ド×16ビット構成のダイナミックラ

MSM51V16160F

Contextual Info: FEDD51V16160F-01 1Semiconductor MSM51V16160F This version: May 2001 Previous version :  1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate

Contextual Info: O K I Semiconductor MSM51V16160_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V16160 is OKI's CMOS silicon gate process technology.

Contextual Info: FJDD51V16160F-01 1電子デバイス MSM51V16160F 今回作成：2001 年 5 月 前回作成：― 1,048,576-Wordx16-Bit DYNAMIC RAM : 高速ページモード • 概要 MSM51V16160F はCMOS プロセス技術を用いた 1,048,576 ワード×16 ビット構成のダイナミックラ

MSM51V16160D

Contextual Info: Pr E2G0130-17-61 el im y 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. The MSM51V16160D/DSL achieves high integration, high-speed operation,

Contextual Info: FEDD51V16400F-02 Issue Date: Jul. 19, 2005 OKI Semiconductor MSM51V16400F 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V16160F achieves high integration, high-speed operation, and

SOJ42-P-400-1

Abstract: msm51v16160b
Contextual Info: ¡ Semiconductor MSM51V16160B/BSL ¡ Semiconductor MSM51V16160B/BSL E2G0081-17-41 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160B/BSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16160B/BSL achieves high integration, high-speed operation, and

51V1616

Contextual Info: O K I Semiconductor MSM51 V16160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI6160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16160 achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM51V16160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16160 achieves high integration, high-speed operation, and low-power

m51171

Contextual Info: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.

Bv 42 transistor

Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.

MSM5117180-70

Abstract: MSM5117180-80
Contextual Info: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.