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    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT5LC2565 64K x 4 SRAM M IC R O N 64K x 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE FEATURES PIN ASSIGNMENT Top View • High speed: 15,20,25, and 35ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply • Easy memory expansion with CE and OE options


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    PDF MT5LC2565 28-Pin

    Untitled

    Abstract: No abstract text available
    Text: M IC R D N I MT5LC2565 64K X 4 SRAM SEMICONDUCTOR TIC SRAM 64K x 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I/ O pins are 5V tolerant • High speed: 1 2 ,1 5 ,2 0 and 25 • High-performance, low-power, CM OS double-metal process • Single +3.3V ±0.3V power supply


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    PDF MT5LC2565 28-Pin

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC SSE D • blllSMT DDD3SS4 Dlfl ■ MRN ADVANCE MT5LC2565 64K X 4 SRAM |V |IC = R O N 64K X 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE FEATURES • High speed: 15,20,25, and 35ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply


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    PDF MT5LC2565 0003Sbl 018S3,

    Untitled

    Abstract: No abstract text available
    Text: JUL i 4 ’«S3 PRELIMINARY MICRON I 64K St MíCOKUlICIOR MC SRAM MODULE X MT8LS6432 32 SRAM MODULE 64Kx 32 SRAM LOW VOLTAGE FEATURES • • • • • • • • High speed: 17,20,25, 30 and 35ns High-performance, low-power CMOS process Single +3.3V ± 0.3V power supply


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    PDF MT8LS6432 64-Pin 64-pins MTILS6432 C1993.

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 64K SRAM MODULE MT8LS6432 32 SRAM MODULE X 64K X 32 SRAM LOW VOLTAGE FEATURES H ig h sp eed : 15, 2 0 a n d 25n s H ig h -p e rfo rm a n ce, lo w -p o w er C M O S p ro cess Sin g le + 3 .3 V ± 0 .3 V p o w er su p p ly 5 V -to lera n t I / O


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    PDF MT8LS6432 64-Pin

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


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    PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    A1526

    Abstract: 64K X 4 SRAM
    Text: M T5LC2565 64K X 4 SRAM M IC R O N SRAM 64K X 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I/O pins are 5V tolerant • High speed: 1 2 ,15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +3.3V +0.3V power supply • Easy memory expansion with CE and OE options


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    PDF T5LC2565 28-Pin MT51C2565 MT5LC2565 A1526 64K X 4 SRAM

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEM ICO NDUCTOR INC b'IE D • blll54T □ □□Tia'I 141 H M R N 256K SRAM 1DIE SEMICONDUCTOR, INC- SRAM DIE 256K SRAM 256K X 1, 64K X 4, 32K x 8 FEATURES • • • • DIE OUTLINE Top View Single 5V or 3.3V power supply All I/O pins are 5V tolerant


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    PDF blll54T MT5C2565 150mm

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY |V |IC = R O N 64K SRAM MODULE X MT8LS6432 32 SRAM MODULE 64Kx 32 SRAM LOW VOLTAGE PIN ASSIGNMENT Top View H igh speed: 17,20, 25, 30 and 35ns H igh-perform ance, low -pow er CMOS process Single +3.3V ± 0.3V pow er supply 5V-tolerant I /O _


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    PDF MT8LS6432 64-Pin MT6LS6432

    T5LC2565

    Abstract: No abstract text available
    Text: MT5LC 2565 64K X 4 SRAM |U |IC R O N SRAM 64K X 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE PIN A SSIG N M E N T Top View • All I / O pins are 5V tolerant • High speed: 1 2 ,1 5 ,2 0 and 25 • High-perform ance, low-power, CM OS double-metal process • Single +3.3V ±0.3V power supply


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    PDF 28-Pin MT5LC2565 T5LC2565

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY S12C 256K SR A M D IE MICRON ft- n u —.m¡T. we. SRAM DIE 256K SRAM 2 5 6 K X 1, 6 4 K x 4 , 3 2 K x 8 FEATURES • Single 3.3V ±0.3V power supply 3.3V ±0.2V for 12ns and faster • 5V -tolerantI/0 • Common data inputs and data outputs (separate data


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    PDF 150mm 114x114 C1994.

    Micron Semiconductor

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC b? E J> blllSMI M OOEmLfS TbT • MRN M T5LC 2565 64K X 4 SRAM MICRON SRAM 64K X 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I / O pins are 5V tolerant • High speed: 1 2 ,1 5 ,2 0 , 25 and 35ns • High-perform ance, low-power, CM OS double-m etal


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    PDF 28-Pin Micron Semiconductor

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


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    PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v