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    N 1210 TRANSISTOR Search Results

    N 1210 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N 1210 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    104LHS31

    Abstract: D 799 104PW191 NL8060BC26-19Y display nec 20*2
    Text: TFT COLOR LCD MODULE NL8060BC26-19Y 26cm 10.4 Type SVGA PRELIMINARY DATA SHEET (2nd edition) Document Number: DOD-M- 1210 (2nd edition) Published date: October 2002 N CP(N) ã NEC Corporation 2002 All rights reserved. NL8060BC26-19Y INTRODUCTION No part of this document shall be copied in any form or by any means without the prior written consent


    Original     		PDF NL8060BC26-19Y 104LHS31 D 799 104PW191 NL8060BC26-19Y display nec 20*2

    V12MLA0805L

    Abstract: V14MLA0603 V14MLA0805 V9MLA0603 V9MLA0805L
    Text: ML Series S E M I C O N D U C T O R Multilayer Surface Mount Transient Voltage Surge Suppressors February 1998 Features Description • Leadless 0603, 0805, 1206 and 1210 Chip Sizes The ML Series is a family of Transient Voltage Surge Suppression devices based on the Harris Multilayer


    Original     		PDF -55oC 125oC 178mm 330mm V12MLA0805L V14MLA0603 V14MLA0805 V9MLA0603 V9MLA0805L

    varistor 222

    Abstract: harris varistor V14MLA0603 V14MLA0805 V14MLA0805L V14MLA1206 V9MLA0603 V14MLA0805 T
    Text: ML Series S E M I C O N D U C T O R Multilayer Surface Mount Transient Voltage Surge Suppressors April 1997 Features Description • Leadless 0603, 0805, 1206 and 1210 Chip Sizes The ML Series is a family of Transient Voltage Surge Suppression devices based on the Harris Multilayer


    Original     		PDF -55oC 125oC 1-800-4-HARRIS varistor 222 harris varistor V14MLA0603 V14MLA0805 V14MLA0805L V14MLA1206 V9MLA0603 V14MLA0805 T

    Untitled

    Abstract: No abstract text available
    Text: V N 1206 V N 1210 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices B Vdss I Order Number / Package ^DS O N *D(0N> BV dgs (max) (min) TO-39 TO-92 TO-220 120 V 60 1.0A VN1206B VN1206L VN1206D 120 V 1 0 ÌÌ


    OCR Scan     		PDF VN1206B VN1206L VN1210L O-220 VN1206D temperatur06 VN1210 VN1210

    Untitled

    Abstract: No abstract text available
    Text: □ï SUPERTEX INC 1 7 07732^5 DOOlbSÖ h V N 1206 V N 1210 r- -if-os’ N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information Order Number / Package b v dss/ R DS(ON) *D(ON) BVDgs (max) (min) TO-39 TO-92 TO-220 120 V 60 1.0A VN1206B VN1206L


    OCR Scan     		PDF VN1206B VN1210B VN1206L VN1210L O-220 VN1206D VN1210D well1210 VN1210 VN1206

    Untitled

    Abstract: No abstract text available
    Text: >ki>jxiyki 19-1210; Rev 0 :3 /9 7 +3.3 V, 6 2 2 M b p s , S DH/ SONET 1:8 D e s e r i a l i z e r w i t h TTL O u t p u t s Features The M A X 3 68 0 d e s e ria liz e r is id e a l fo r c o n v e rtin g 6 22 M b ps serial d a ta to 8 -b it-w id e , 7 7M bp s parallel


    OCR Scan     		PDF MAX3680 28-pin

    TPC8401

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TPC8401 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N, P CHANNEL MOS TYPE U-MOSII TPC8401 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SOP-8 •


    OCR Scan     		PDF TPC8401 TPC8401

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE TPC8401 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N, P CHANNEL MOS TYPE U -M O SII TPC8401 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8


    OCR Scan     		PDF TPC8401

    taking photo

    Abstract: led 5mm 700nm
    Text: T O SH IB A TLP832 TOSHIBA PHOTO INTERRUPTER INFRARED LED + PHOTO TRANSISTOR TLP832 HOME ELECTRONICS EQUIPMENT SUCH AS VCRS AND CD PLAYERS OA EQUIPMENT SUCH AS COPIERS, PRINTERS, AND FACSIMILES AUTOMATIC SERVICING EQUIPMENT SUCH AS COMMODITY AND TICKET VENDING MACHINES


    OCR Scan     		PDF TLP832 TLP832 Ta-25 taking photo led 5mm 700nm

    Tlp832

    Abstract: No abstract text available
    Text: TOSHIBA TLP832 TOSHIBA PHOTO INTERRUPTER INFRARED LED + PHOTO TRANSISTOR TLP832 HOME ELECTRONICS EQUIPMENT SUCH AS VCRS AND CD PLAYERS OA EQUIPMENT SUCH AS COPIERS, PRINTERS, AND FACSIMILES AUTOMATIC SERVICING EQUIPMENT SUCH AS COMMODITY AND TICKET VENDING MACHINES


    OCR Scan     		PDF TLP832 TLP832

    2SK192A

    Abstract: 2sk192
    Text: 2SK192A TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K1 9 2A FM TUNER APPLICATIONS Unit in mm VHF BAND AMPLIFIER APPLICATIONS 4.2MAX. • High Power Gain : Gpg = 24dB Typ. (f = 100 MHz) • Low Noise Figure : NF = 1.8dB (Typ.) (f = 100 MHz)


    OCR Scan     		PDF 2SK192A 2SK192A 2sk192

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SA1245 TOSHIBA TRANSISTOR 2 S SILICON PNP EPITAXIAL PLANAR TYPE A 1 2 4 5 HIGH FREQUENCY AMPLIFIER AND SWITCHING APPLICATIONS U n it in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS + 0.5 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING


    OCR Scan     		PDF 2SA1245 SC-59

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPS604 TOSHIBA PHOTOTRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS604 PHOTO TRANSISTOR FOR PHOTO SENSOR U nit in mm PHOTOELECTRIC COUNTER VARIOUS KINDS OF READERS POSITION DETECTION • TO-18 m etal package • High sensitivity. • Sharp directivity. Incident light can be effectively used.


    OCR Scan     		PDF TPS604 TPS604 TPS601A

    2SK210

    Abstract: No abstract text available
    Text: 2SK210 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS • • • + 0.5 2 .5 -0.3 + 0.25 1.5-0.15 High Power Gain : Gpg = 24dB Typ. (f = 100MHz) Low Noise Figure


    OCR Scan     		PDF 2SK210 100MHz) SC-59 2SK210

    2SK302

    Abstract: No abstract text available
    Text: TO SH IBA 2SK302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK302 Unit in mm FM TUNER, VHF RF AMPLIFIER APPLICATIONS • • • • Crss = 0.035pF Typ. NF = 1.7dB (Typ.) Gpg = 28dB (Typ.) 5-15V Low Reverse Transfer Capacitance Low Noise Figure


    OCR Scan     		PDF 2SK302 035pF O--236 2SK302

    TLP91

    Abstract: TLP910
    Text: TLP910 T O SH IB A TENTATIVE TLP91 0 TOSHIBA PHOTO REFLECTIVE SENSOR GaAs LED + PHOTO TRANSISTOR PHOTO-REFLECTIVE SENSOR FOR SURFACE MOUNT FOR REFLOW SOLDERING USE ONLY DETECTION OF VCR REEL ROTATION TIMING DETECTION FOR ELECTRONIC PRINTERS AND TYPEWRITERS


    OCR Scan     		PDF TLP910 TLP91 TLP910

    TPS604 photo transistor

    Abstract: Toshiba phototransistor TPS601A
    Text: T O SH IB A TPS604 TPS604 TOSHIBA PHOTOTRANSISTOR SILICON NPN EPITAXIAL PLANAR PHOTO TRANSISTOR FOR PHOTO SENSOR PHOTOELECTRIC COUNTER VARIOU5 KINDS OF READER5 POSITION DETECTION • • • TO-18 metal package High sensitivity. Sharp directivity, Incident light can be effectively used,


    OCR Scan     		PDF TPS604 TPS604 TPS601A TLN108¿ TPS604 photo transistor Toshiba phototransistor

    MT6P06E

    Abstract: MT3S06S MT3S06T
    Text: TO SH IBA MT6P06E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6P06E Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 MOUNTED DEVICES 5 B- Q1/Q2 : SSM (TESM)


    OCR Scan     		PDF MT6P06E MT3S06S MT3S06T) MT3S06S MT3S06T

    2SC5096

    Abstract: HN2C12FT
    Text: TO SH IBA TENTATIVE HN2C12FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 2 FT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6


    OCR Scan     		PDF HN2C12FT N2C12 2SC5096

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SSM3K03FE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K03FE HIGH SPEED SWITCH APPLICATIONS Unit in mm ANALOG SWITCH APPLICATIONS 1.6 ± 0.1 0.85 ±0.1 • 2.5 V Gate Drive • High Input Impedance • Low Gate Threshold Voltage •


    OCR Scan     		PDF SSM3K03FE

    MT3S03AS

    Abstract: MT3S03AT MT6C03AE
    Text: TO SH IBA MT6C03AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6C03AE Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 5 MOUNTED DEVICES B- Q1/Q2 : SSM (TESM)


    OCR Scan     		PDF MT6C03AE MT3S03AS MT3S03AT) MT3S03AS MT3S03AT MT6C03AE

    2SK241

    Abstract: No abstract text available
    Text: TO SH IBA 2SK241 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK241 Unit in mm FM TUNER, VHF AND RF AMPLIFIER APPLICATIONS • • • • 4.2MAX. Low Reverse Transfer Capacitance Crss = 0.035 pF Typ. NF = 1.7dB (Typ.) Low Noise Figure High Power Gain


    OCR Scan     		PDF 2SK241 55MAX. 2SK241

    2SC5086

    Abstract: HN2C10FT
    Text: TO SH IBA TENTATIVE HN2C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 0 FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6


    OCR Scan     		PDF HN2C10FT 2SC5086

    MT3S06S

    Abstract: MT3S06T MT6C06E
    Text: TO SH IBA MT6C06E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6C06E Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 5 MOUNTED DEVICES Three-pins (SSM/TESM) mold products are


    OCR Scan     		PDF MT6C06E MT3S06S MT3S06T) MT3S06S MT3S06T MT6C06E