N492 Search Results

N4923

Abstract: 1SV268
Contextual Info: 注文コード No. N 4 9 2 3 1SV268 No. N4923 N2599 1SV268 特長 シリコンエピタキシァル形 送受信アンテナ切換え用 PIN ダイオード ・端子間容量が小さい（C=0.7pF typ） 。 ・順直列抵抗が小さい（rs=0.5Ω typ）

2SD1620

Abstract: FP304 ITR11110 ITR11111 ITR11112 ITR11113 N4926
Contextual Info: 注文コード No. N 4 9 2 6 FP304 No. N4926 O3000 半導体ニューズ No.3962 とさしかえてください。 FP304 特長 TR : NPN エピタキシァルプレーナ形シリコントランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用

1SV272

Abstract: N4924
Contextual Info: 注文コード No. N 4 9 2 4 1SV272 No. N4924 N2599 1SV272 特長 シリコンエピタキシァル形 送受信アンテナ切換え用 PIN ダイオード ・小型外形のため高密度実装および小形設計が可能である。 ・端子間容量が小さい（C=0.6pF typ）

n4922

Abstract: N4918 n4919 1N4916 1N4916A 1N4917 1N4917A 1N4918 1N4918A 1N4919
Contextual Info: 1N4916 19.2 VOLT NOMINAL ZENER VOLTAGE + 5% thru •TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4932A ■METALLURGICALLY BONDED -1 * DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS O perating Temperature: -6 5 °C to + 17 5°C S torage Temperature: -6 5°C to + 1 7 5 °C

Contextual Info: N4921G, N4922G, N4923G Medium-Power Plastic NPN Silicon Transistors These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • • • • • Low Saturation Voltage Excellent Power Dissipation Due to Thermopadt Construction

Contextual Info: Zero-TC Reference Diodes Part Number 1N4907A 1N4900 1N4900A 1N4901 1N4901A 1N4902 1N4902A 1N4903 1N4903A 1N4896 1N4896A 1N4897 1N4897A 1N4898 1N4898A 1N4899 1N4899A N4929 N4929A 1N4930 1N4930A 1N4931 1N4931A 1N4932 1N4932A N4925 N4925A N4926 N4926A N4927

2N4923

Abstract: 2N4922 2N4921 2N4922G 2N4921G 2N4923G N492 2N4918 2N4919 2N4920
Contextual Info: N4921, N4922, N4923 N4923 is a Preferred Device Medium−Power Plastic NPN Silicon Transistors These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Low Saturation Voltage − VCE sat = 0.6 Vdc (Max) @ IC = 1.0 A

N4920

Abstract: IN821 qpl-19500 4918A 1NB21 1N939B-1 1n4* 149 H 1N9438 1N45BTA-1 4765A
Contextual Info: QUICK REFERENCE GUIDE TEMPERATURE COMPENSATED REFERENCE DIODES EFFECTIVE TEMPERATURE COEFFICIENT %TC NOMINAL VOLTAGE TEST CURRENT OPERATING TEMPERATURE Vz@lz VOLTS Iz mA RANGE °C 6.2 7.5 -5 5 to +100 7.5 -5 5 to + 100 *\d ." ' A 7.5 -55 to + 100 1NB21-1 0.5

n503

Abstract: n383 LCD N96 N349 n352 SFAA3L N555 data sheet n345 N546 N582
Contextual Info: Z-Power LED X10490 Technical Data Sheet *Customer : Specification SFAA3L CUSTOMER Checked by Approved by SUPPLIER Drawn by Approved by Rev. 1.00 December 2009 www.acriche .com www.acriche.com Document No. : SSC-QP-7-07-24 Rev.00 Z-Power LED X10490 Technical

2N3800

Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817
Contextual Info: DATA BDI S U P P L E M E NT This is the second supplement to the 2nd Edition of the Semiconductor Data Book originally published in August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. D evices characterized in this supplement include only the type numbers in tro­

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

Contextual Info: N4921, N4922, N4923 N4923 is a Preferred Device Medium−Power Plastic NPN Silicon Transistors These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Low Saturation Voltage − VCE sat = 0.6 Vdc (Max) @ IC = 1.0 A

Hp 4619

Abstract: Siemens Ferrite n67 Siemens Ferrite B64290 A638 Ferrite Siemens r4 b64290a FERRITES N67 siemens b64290 Siemens Ferrite n27 B64290K
Contextual Info: da-ringk Seite 1 Mittwoch, März 26, 1997 9:53 AM Ferrites and Accessories Ring Cores da-ringk Seite 2 Mittwoch, März 26, 1997 9:53 AM Ring cores with the new blue epoxy coating from Siemens Matsushita Components da-ringk Seite 3 Mittwoch, März 26, 1997 9:53 AM

Contextual Info: N4921G, N4922G, N4923G Medium-Power Plastic NPN Silicon Transistors These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • • • • • Low Saturation Voltage Excellent Power Dissipation Due to Thermopadt Construction

CAPACITOR 16,000 UF 350V

Abstract: 14 UF MKP 450V E62.F81-503D1W three phase Capacitors capacitor MKP 630V 501E1 Westcode N thyristor Semiconductors WESTCODE catalog 16500-2 Westcode catalogue
Contextual Info: CAPACITORS FOR POWER ELECTRONICS Westcode Semiconductors Ltd Issue 4 – August 2004 CAPACITORS FOR POWER ELECTRONICS Table of contents page 1. Introduction 2 2. Applications & Definitions 3 3. Capacitor Construction 5 4. Safety 5 5. Operating life 6 6. Mounting and operating instructions

Siemens Ferrite B64290

Abstract: siemens b64290 siemens ring core b64290 B64290 Siemens Ferrite n67 Ferrite Siemens r4 B64290 K37-X38 N492 k659 B64290P35X830
Contextual Info: Ring Cores B64290 Overview of available types Type R 2,5 R 3,0 R 3,9 R 3,9/2 R 4,0 R 5,8 R 5,8/3 R 6,3 R 9,5/2 R 9,5 R 10 R 12,5 R 13,3 R 14 R 15 Dimensions da1 mm 2,5 ± 0,12 3,05 ± 0,2 3,94 ±0,12 3,94 ±0,12 4,0 ± 0,12 4,5 max) 5,84 ±0,12 (6,36 max)

Siemens Ferrite B65541

Abstract: TESLA mh 7400 mh 7400 tesla MDT 760 THYRISTOR ARALDITE AY 105 ARALDITE HY 956 EPF S20 Siemens Ferrite B64290 ETD54 n62 ARALDITE D AY 103
Contextual Info: Contents Selector Guide Index of Part Numbers 5 11 23 SIFERRIT Materials 29 General – Definitions Application Notes Processing Notes 111 129 151 Packing Quality Considerations Standards and Specifications 165 175 179 RM Cores 183 PM Cores 283 P Cores P Core Halves P Cores for Proximity Switches

Contextual Info: I n ter n a tio n a l 1N4916 thru 1N4932A S e m ic o n d u c to r , I n c . TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 19.2 V O LT N O M IN A L ZEN ER V O LT A G E +/- 5% LOW NO ISE MAXIMUM RATINGS operating Temperature: storage Temperature: DC Power Dissipation:

2N4922G

Abstract: 2N4923 2N4921G 2N4922 2N4922 npn 2N4918 2N4919 2N4920 2N4921 2N4923G
Contextual Info: N4921, N4922, N4923 N4923 is a Preferred Device Medium−Power Plastic NPN Silicon Transistors These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Low Saturation Voltage − VCE sat = 0.6 Vdc (Max) @ IC = 1.0 A

krone n355

Abstract: n1076 n410 ab N1106 N346 AB N117 N1165 n1213 n1211 N906
Contextual Info: PRISLISTA NEUTRIK Gäller från 2004-06-01 Kontakter i bulkpack -D säljs endast vid order om 1000 enheter och levereas i praktisk plockbox med 100st i varje. Vissa kontakter är ej lagervara och kräver minikvantitet I slutet finner du de senaste prisändringarna

Contextual Info: N4921, N4922, N4923 Medium-Power Plastic NPN Silicon Transistors These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • • • • • http://onsemi.com Low Saturation Voltage Excellent Power Dissipation Due to Thermopadt Construction

N4921

Contextual Info: 1N4916 19.2 VOLT NOMINAL ZENER VOLTAGE ± 5% thru TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4932A • LOW NOISE •METALLURGICALLY BONDED -1 ■DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS O p e ra tin g T e m p e ra tu re : -6 5 C to + 1 7 5 C S to ra g e T e m p e ra tu re : - 6 5 'C to + 1 7 5 "C