84AS Search Results

NE42484

Abstract: NE42484A NE76084 NE33284A 84AS NE32584C NE32484A NE32984D NE76184A ne324
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 84 1.78 ± 0.2 S 1.78 ± 0.2 D W S G 0.5 ± 0.1 ALL LEADS 1.0 MIN (ALL LEADS)- (84S/84AS) 1.7 MIN (ALL LEADS) (84-SL/84A-SL) 1.7 MAX

NE33284AS

Abstract: NE33284A NE33284A-SL NE33284A-T1 MODEL 536
Contextual Info: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:

ne76184a

Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, Id s = 10 m A L O W N O IS E F IG U R E : 0.8 dB typical at 4 GHz 24 H IG H A S S O C IA T E D G A IN : 21 12 dB typical at 4 GHz 18 L g = 1.0 tu n , W g = 4 0 0 jim

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32684A NOT RECOM MENDED FOR NEW DESIGN NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V , I ds = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11.5 dB Typical at 12 GHz

Nec 4558 c

Abstract: NE33284A-SL NE33284AS 33284a
Contextual Info: NEC SUPER LOW NOISE HJ FET FEATURES NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA V ER Y LO W NO ISE FIG URE: 0.8 dB typical at 12 GHz HIG H A S S O C IA T E D G AIN : 10.5 dB Typical at 12 GHz m G A TE LE N G T H : 0.3 urn «

LORB

Abstract: NE2720 NE334S01
Contextual Info: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32684A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 mA FEATURES VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz HGH ASSOCIATED GAIN: n 1 .5 dB Typical at 12 GHz _ CO T> La s 0.20 pm, Wa = 200 im

ne71084

Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089
Contextual Info: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0

Contextual Info: Outline Dimensions Units in mm 2-1 ± 0.2 +0.2 2-8 -0.3 * 1 .2 5 ± 0.1 * (LEADS 2. 3, 4) j ö 2-0 ± 0 .2 0.65 - 0.60 X ? : 2.9 ±0 .2 Î- m . • »- 0.95 F 0.65 t V i 0.95 i T _ * *_ fn1 io Ti - * 0 6 -0.05 0.3 . m ♦ ’ 0 .6 5 1 + 0.10 0-4 -0.05

Contextual Info: LOW NOISE LTO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE NF - 1.6 dB TYP at f - 12 GHz HIGH ASSOCIATED GAIN G a = 9 dB TYP at f = 12 GHz m 33 , L g = 0.3 jim, Wg = 280 jim <

NE42484A-T1

Abstract: NE42484A NE42484AS
Contextual Info: SUPER LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE42484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, IDS = 10 mA VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz 24 HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz 21 CD •o La = 0.35 im, Wo = 200 jim

ne71084

Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
Contextual Info: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32684A NOT RECOMMENDED FOR NEW DESIGN FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V , I d s = 10m A VERY LOW NOISE FIGURE: 0.5 dB typical at 12 G H z HIGH ASSOCIATED GAIN: 11.5 dB Typical at 12 G H z

NE33284A-SL

Abstract: NE33284AS
Contextual Info: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids s 10 m A FEATURES VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz m GATE LENGTH: 0.3 urn *o GATE WIDTH: 280 c LOW COST METAL/CERAMIC PACKAGE

MRFA 2604

Abstract: siceront kf transistor motorola 351 mrfa2604 470-860 mhz Power amplifier w siceront 84AST30028A w9260 class d amplifier circuit
Contextual Info: MOTOROLA Order this document by MRFA2604/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRFA2604 Broadband R.F. Array for TV Transmitter The MRFA2604 is a solid state class AB amplifier specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip technology

Contextual Info: MOTOROLA Order this document by MRFA2600/D SEMICONDUCTOR TECHNICAL DATA The RF Line Broadband RF Array for TV Transmitter MRFA2600 The MRFA2600 is a solid state class A amplifier and is specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip

300C

Abstract: 81A-150 484A Delay Modules
Contextual Info: "7=*^ 7 - i 3 k S T H lM Ì OQQOliûD T31 NCLB DIGITAL DELAY MODULES 81 A, 84A Series 9 Kii][pX2M10iIS NEWPORT Single Output and Triple Independent 8 Pin DIP COHPONENTS LTD MAE D - DUAL-IN-LINE PACKAGE (TOP VIEW □ Schottky TTL buffered

NE33284A

Abstract: NE33284AS NE33284A-SL NE33284A-T1
Contextual Info: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:

NE32684A

Abstract: NE32684AS NE32684A-T1
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32684A NOT RECOMMENDED FOR NEW DESIGN NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz 24 1.2 µm, WG = 200 µm • LG = 0.20 µ • LOW COST METAL CERAMIC PACKAGE

NE33284AS

Abstract: FR 401
Contextual Info: NEC SUPER LOW NOISE HJ FET FEATURES NE33284A N O IS E FIG U R E & A S S O C IA T E D G A IN vs. F R E Q U E N C Y Vos = 2 V, I d s = 10 m A VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz HIGH ASSO C IA TED GAIN: 10.5 dB Typical at 12 GHz CD GATE LENGTH: 0.3 nm

76184a

Abstract: NE76184A/CEL
Contextual Info: GENERAL PURPOSE LTO X-BAND GaAs MESFET NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s= 3 V, Ids= 10 mA FEATURES LOW NOISE FIGURE: 0.8 dB typical at 4 GHz HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz CD ~D o z U_ L g = 1.0 jim , Wg = 4 0 0 jim

NE42484A-T1

Abstract: NE42484AS
Contextual Info: SUPER LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE42484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Id s = 10 mA VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz 24 HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz 21 L g = 0.35 Jim, W g = 200 |im

Contextual Info: bSTBlMT DDD01Û0 T31 NCLB DIGITAL DELAY M ODULES 81 A , 84A Series Single Output and Triple Independent 8 Pin DIP NEWPORT CONPONENTS LTD 4fiE » DUAL-IN-LINE PACKAGE TOP VIEW □ Schottky TTL buffered 81A -S E R IE S □ 8 pin package □ Low profile Vcc

TH 2066.4

Abstract: 13811
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz 24 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz m • Lg = 0.25 [im, W g = 200 [im