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    5.1 amplifier circuit diagram

    Abstract: MC13155D ML13155-5P x6951m siemens X6950M SIEMENS saw filter X6950M 001-120 LANSDALE SEMICONDUCTOR schematic diagram tv sharp X6958
    Text: ML13155 Wideband FM IF SEMICONDUCTOR TECHNICAL DATA Legacy Device: Motorola MC13155 The ML13155 is a complete wideband FM detector designed for satellite TV and other wideband data and analog FM applications. This device may be cascaded for higher IF gain and


    Original     		PDF ML13155 MC13155 ML13155 MC13155D ML13155-5P 5.1 amplifier circuit diagram MC13155D ML13155-5P x6951m siemens X6950M SIEMENS saw filter X6950M 001-120 LANSDALE SEMICONDUCTOR schematic diagram tv sharp X6958

    X6958M

    Abstract: No abstract text available
    Text: ML13155 Wideband FM IF SEMICONDUCTOR TECHNICAL DATA Legacy Device: Motorola MC13155 The ML13155 is a complete wideband FM detector designed for satellite TV and other wideband data and analog FM applications. This device may be cascaded for higher IF gain and


    Original     		PDF ML13155 MC13155 X6958M

    NEC Microwave Semiconductors

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES_ Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB V d sx Drain to Source Voltage


    OCR Scan     		PDF NE6500496 NE6500496 IS12I IS22I2 IS12S21I NEC Microwave Semiconductors

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE GaAs MESFET FEATURES • LOW NOISE FIGURE: NF - 0.8 dB typical at f = 4 GHz • HIGH ASSOCIATED GAIN: Ga = 12.0 dB typical at f = 4 GHz • Lg = 1.0 |im, W g = 400 Jim NE7610o NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V, Id s = 10 mA


    OCR Scan     		PDF NE7610o NE76100 NE76100 NE761QQN NE76100M 98B-3500« 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: NEC SUPER LOW NOISE HJ FET FEATURES NE329S01 & a s s o c ia t e d GAIN vs. FREQUENCY n o is e f ig u r e -• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz • HIGH ASSOCIATED GAIN:


    OCR Scan     		PDF NE329S01 NE329S01 Rn/50 NE329S01-T1 NE329S01-T1B

    80500 TRANSISTOR

    Abstract: No abstract text available
    Text: 2 WATT C-BAND POWER GaAs MESFET FEATURES • NE85002 SERIES SELECTION CHART T Y P IC A L P E R F O R M A N C E CLASS A OPERATION • HIGH EFFICIENCY: • BROADBAND CAPABILITY T|ADD > 3 9 % PA RT NUM B ER TYP FR E Q U E N C Y RANGE G H z Po ut (dB m ) N E 8500200


    OCR Scan     		PDF NE85002 NE8500295 AN-1001 80500 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4004F V H F-U H F W IDE BAND AMPLIFIER FEATURES • Band W id th • H i g h G a i n : |S2 i | 2 = 10 .5 d B T yp . ( f = 5 0 0 M H z , V c c = 2V) 1. 2 G H z (T yp.) (3 d B d o w n , V c c = 2V) •


    OCR Scan     		PDF TA4004F

    Untitled

    Abstract: No abstract text available
    Text: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4002F V H F -U H F WIDE BAND AM PLIFIER W eight : 0.013g Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Supply Voltage Total Power Dissipation Operating Temperature Storage Temperature * SYMBOL RATING


    OCR Scan     		PDF TA4002F 500MHz 500MHz,

    NE650

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES_ ; Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH UNEAR GAIN: 10.5 dB V dsx Drain to Source Voltage


    OCR Scan     		PDF NE6501077 NE6501077 IS12I IS22I2 IS12I IS12S21I CA95054-1B17 24-Hour NE650

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn

    MBB400

    Abstract: vqb 201 BF747 HS11 TRANSISTOR K 314 marking code 604 SOT23 top 256 yn
    Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation Low cost NPN transistor in a plastic SOT23 package. • High current gain • Good thermal stability. 2 1 APPLICATIONS • It is intended for VHF and UHF TV-tuner applications


    OCR Scan     		PDF BF747 MBB400 vqb 201 BF747 HS11 TRANSISTOR K 314 marking code 604 SOT23 top 256 yn

    BF547

    Abstract: HS11 MSB003 PHE0 PHILIPS bf547
    Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF Low cost NPN transistor in a plastic SOT23 package. • Stable oscillator operation • High current gain • Good thermal stability.


    OCR Scan     		PDF BF547 MSB003 BF547 HS11 MSB003 PHE0 PHILIPS bf547

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TA4004F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4004F V H F -U H F WIDE BAND AMPLIFIER FEATURES • Band W idth 1.2GHz Typ. (3dB down, V q q = 2V) • High Gain : |S2112 = 10.5dB (Typ.) (f=500MHz, V CC = 2V) • Operating Supply Voltage : V c c = 2—5V


    OCR Scan     		PDF TA4004F S2112 500MHz, IS11P IS21P IS22P IS12P

    TA4002F

    Abstract: No abstract text available
    Text: TOSHIBA TA4002F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4002F V H F-U H F WIDE BAND AMPLIFIER FEATURES • Band Width 1.3GHz Typ. (3dB down) • High Gain : |S2 il2 = 23dB (Typ.) (f = 500MHz) • 5 0 0 Input and Output Impedance • Small Package


    OCR Scan     		PDF TA4002F 500MHz) TA4002F

    OCI 531

    Abstract: No abstract text available
    Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION


    OCR Scan     		PDF NE73435) NE734 NE73400) NE7343-323) OT-23) 24-Hour OCI 531

    GLDS

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0 .6 dB typical at 12 G H z 24 • HIGH ASSOCIATED GAIN: 21 11 dB typical at 12 G H z • L g = 0.25 nm, W g = 200 nm


    OCR Scan     		PDF NE32484A resul83 IS12I IS22I2 IS12S21I NE32484AS NE32484A-T1 NE32484A-SL. GLDS

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 ABSOLUTE MAXIMUM RATINGS1 FEATURES_ Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.0 dB V ds


    OCR Scan     		PDF NE8500100 NE8500199 NE8500100 TheNE8500199isamedium fo658 IS12I IS111 IS22I2 IS12S21I

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TA4003F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC IA 4 QQ3 F V H F-U H F WIDE BAND AMPLIFIER FEATURES • Band Width 1.5CHz Typ. (3dB down, V c c = 2V) • High Gain : |S2i|2 = 11dB (Typ.), (f = 500MHz, V Cc = 2V) • Operating Supply Voltage : V c c = 2~3V


    OCR Scan     		PDF TA4003F 500MHz,

    bf433

    Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
    Text: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.


    OCR Scan     		PDF MRF681 bf433 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68

    Untitled

    Abstract: No abstract text available
    Text: NEC 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES g a in vs. UPC2708T UPC2711T frequency • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE


    OCR Scan     		PDF UPC2708T) UPC2708T UPC2711T UPC2711T qua08T UPC2708T/U PC2711T

    str 0765

    Abstract: gi 9540 STR W 6750 f STR X 6750 NEC D 70 9360 STR 6750 str r 4440 STR W 6750
    Text: 4 W 14 GHz INTERNALLY NEZ1414 4E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIG H O U TPU T PO W ER: 36.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENC Y: 30% TYP • IN D U STR Y STA N D A R D PACKAG ING


    OCR Scan     		PDF NEZ1414 NEZ1414-4E redu50 str 0765 gi 9540 STR W 6750 f STR X 6750 NEC D 70 9360 STR 6750 str r 4440 STR W 6750

    JF11

    Abstract: NE02133-T1B
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LA RGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 G Hz Gain Com pression


    OCR Scan     		PDF NE021 NE02107 OT-23) NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B JF11

    z1414

    Abstract: No abstract text available
    Text: 3 W 14 GHz INTERNALLY NEZ1414.3E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS umtsm mm • HIGH OUTPUT POWER: 34.5 dBm TYP P A C K A G E O U TL IN E X -1 7 • HIGH LINEAR GAIN: 7.5 dB TYP • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGING


    OCR Scan     		PDF NEZ1414 NEZ1414-3E IS22I2 z1414

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TA4002F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 4 QQ2 F V H F-U H F WIDE BAND AMPLIFIER FEATURES • Band Width 1.3GHz Typ. (3dB down) • High Gain : IS2 1I2 = 23dB (Typ.) (f = 500MHz) • 50 0 Input and Output Impedance


    OCR Scan     		PDF TA4002F 500MHz) 500MHz. IS12I3 IS22I