NF 018 GE Search Results

FD300 diode

Abstract: F300 relay Leach f370 fd300 isolation pad 10114 F300 Leach
Contextual Info: SERIES F370 ENGINEERING DATA SHEET RAILWAY RELAY 2 PDT, 1 AMP / 72VDC Polarized, non latching, hermetically sealed relay 2 PDT Contact arrangement Coil supply Direct current Meets the requiements of MIL-R-6106 CEECC16101-018 NF F 62-002-2 PRINCIPLE TECHNICAL CHARACTERISTICS

isolation pad 10114

Abstract: Leach f370 F300 relay F370-B
Contextual Info: SERIES F370 ENGINEERING DATA SHEET RAILWAY RELAY 2 PDT, 1 AMP / 72VDC Polarized, non latching, hermetically sealed relay 2 PDT Contact arrangement Coil supply Direct current Meets the requiements of MIL-R-6106 CEECC16101-018 NF F 62-002-2 PRINCIPLE TECHNICAL CHARACTERISTICS

Contextual Info: HT 78 HT 78 P 1 R W = S oH Diélectrique CONDENSATEURS HAUTE TENSION HIGH VOLTAGE CAPACITORS CARACTERISTIQUES GENERALES Température d’utilisation • HT 78 • HT 78 P Tg d à 1 kHz pour CR X 1,5 nF Tg d à 1 kHz pour CR ` 1,5 nF Résistance d'isolement pour CR X 0,22 µF

Contextual Info: HT 78 HT 78 P 1 CONDENSATEURS HAUTE TENSION HIGH VOLTAGE CAPACITORS Diélectrique CARACTERISTIQUES GENERALES Température d’utilisation • HT 78 • HT 78 P Tg d à 1 kHz pour CR X 1,5 nF Tg d à 1 kHz pour CR ` 1,5 nF Résistance d'isolement pour CR X 0,22 µF

433mhz RX 411

Contextual Info: TH71101 315/433MHz FSK/ASK Receiver Features Single-conversion superhet architecture for low external component count FSK demodulation with phase-coincidence demodulator Low current consumption in active mode and very low standby current Switchable LNA gain for improved dynamic range

MB15H156

Abstract: XTAL_SMD 2bit quantizer XTAL-SMD 3528 pwm 20 PINS transistor+bc+151+equivalent
Contextual Info: January 2005 MB15H156 RTS v1.51.doc Reference Target Specification Fully Integrated GPS RF Downconverter MB15H156 GENERAL DESCRIPTION The MB15H156 GIRAFE GPS Integrated Radio Analog Front End implements a LNA, an image-reject mixer with a RF-AMP, a band pass filter, an AGC, and a fully

2700 microfarad capacitor

Abstract: capacitor 220 microfarad capacitor 10 microfarad 4700 microfarad 25 V 1000 microfarad 35 v capacitor 470 microfarad 15000 microfarad capacitor 101 Ceramic Disc Capacitors 6800 microfarad capacitor picofarad .LY
Contextual Info: General Data For Capacitors EIA CAPACITAN CE C O D E V S M ICRO-PICO-NANO-FARAD NF (MF) (PF) EIA C O D E MICRO-FARAD PICO-FARAD NANO-FARAD 1.5 .0015 1R5 2R2 2.2 .0022 3R3 3.3 .0033 4.7 .0047 4R7 6R8 6.8 .0068 10 .01 100 150 15 .015 .022 22 220 250 25 .025

Contextual Info: RF9938
 

  
      • CDMA/TDMA/DCS1900 PCS Systems • BPSK Modulation • PHS 1500/ WLAN 2400 Systems • Micro-Cell PCS Base Stations • General Purpose Upconverter • Portable Battery Powered Equipment
   

2200 microfarad electrolytic capacitor

Abstract: capacitor 220 microfarad capacitor 470 microfarad 100 microfarad electrolytic capacitor 2700 microfarad capacitor capacitor, .001 microfarad 0.1 microfarad electrolytic capacitor 3.3 microfarad electrolytic capacitor 6800 microfarad capacitor 22000 microfarad capacitor
Contextual Info: General Data For Capacitors EIA CAPACITANCE CODE VS MICRO-PICO-NANO-FARAD <MF PF) (NF) EIA CODE MICRO-FARAD PICO-FARAD NANO-FARAD 1R5 1.5 .0015 2R2 2.2 .0022 3R3 3.3 .0033 4R7 4.7 .0047 6R8 6.8 .0068 100 10 .01 150 15 .015 220 22 .022 250 25 .025 330 33

SIGMA as 226

Abstract: db opera 415 operational amplifier discrete schematic A004R AMMC-5618 AMMP-5618 AMMP-5618-BLK AMMP-5618-TR1 AMMP-5618-TR2
Contextual Info: Agilent AMMP-5618 6–20 GHz General Purpose Amplifier Data Sheet Features • 5 x 5 mm surface mount package • Broad band performance 6–20 GHz • High +19 dBm output power • Medium 13 dB typical gain • 50Ω input and output match Description Agilent’s AMMP-5618 is a high

ta 8659 an

Abstract: 172112
Contextual Info: Agilent AMMP-5618 6–20 GHz General Purpose Amplifier Data Sheet Features • 5 x 5 mm surface mount package • Broad band performance 6–20 GHz • High +19 dBm output power • Medium 13 dB typical gain • 50Ω input and output match Description Agilent’s AMMP-5618 is a high

KTN222S

Abstract: KTN2222AS KTN2222S marking cox
Contextual Info: ¿s\ I n ter n a tio n a l W S em ico n d u cto r, In c . KTN2222S/AS E P IT A X IA L P L A N A R NPN T R A N S IS T O R GENERAL PURPOSE APPLICATAIONS SWITCHING APPLICATIONS SOT-23 FEATURES • Low Leakage C urrent: lCEX = 10 mA Max, V CE = 60 Volts, V EB 0FF =3 V o lts

NTE102A

Abstract: nte103a germanium transistors NPN Germanium Power Diodes npn germanium pnp germanium transistor GERMANIUM germanium transistor pnp Common emitter amplifier diode germanium
Contextual Info: NTE102A PNP & NTE103A (NPN) Germanium Complementary Transistors Medium Power Amplifier Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package designed for use as a medium power amplifier. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

NTE102A

Abstract: germanium transistors NPN nte103a germanium transistor pnp npn germanium Germanium power
Contextual Info: NTE102A PNP & NTE103A (NPN) Germanium Complementary Transistors Medium Power Amplifier Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package designed for use as a medium power amplifier. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

datasheet 1am

Abstract: equivalent of 1AM K4070 1AM sot 23
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBT3906 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration

k4070

Abstract: MMBT3904
Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT3904 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration Top View 1AM B E SOT-23

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3906 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration

k4070

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBT3904 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration

BFP420 application notes 900MHz

Abstract: BFP420 BFP420 application note rf amplifier siemens 10 ghz aplication note BCR400
Contextual Info: Application Note No. 018 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier at 900 MHz using SIEGET BFP420 This application note describes a low noise amplifier at 900MHz using SIEMENS SIEGET®25 BFP420. The design emphasis has been on achieving a

1am sot 23

Abstract: MARKING 1AM
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General

Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT3906 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration Top View 2A B E SOT-23

MPS6512S

Contextual Info: MPS6512S NPN SILICON TRANSISTOR TO-92A DESCRIPTION MPS6512S is NPN silicon planar transistors designed for general purpose amplifier applications. 0 4 .6 8 0 . 18 4 .6 ( 0 . 18 ) 3.58 ( 0 . 14 ) 2.54 12 , 7 ( 0 .5 ) ( 0 . 1) MIN. BOTTOM VIEW —11— 0 .4 5 ( 0 ,018 )

RF2311

Contextual Info: RF2311 4 GENERAL PURPOSE AMPLIFIER Typical Applications • General Purpose High Bandwidth Gain Blocks • Broadband Test Equipment • Final PA for Medium Power Applications • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers Product Description