NMOS DRAM Search Results

NTE65101

Abstract: NTE21128 NTE21256 NTE8255 GJA9
Contextual Info: t* MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE8255 40-Lead DI P, See Diag. 299 NMOS, Programmable Preipheral Interface NTE21128 28-Lead DIP, See Diag. 446 NMOS, 128K EPROM, UV, 250ns NTE21256 16-Lead DIP, See Diag. 248 NMOS, 256k Dynamic RAM (DRAM), 150ns

Contextual Info: MC-41256A9 262,144 X 9-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A9 is a 262,144-word by 9-bit DRAM mod­ ule designed to operate from a single + 5-volt power supply. Advanced dynamic NMOS circuitry, Including a

a5 gnd

Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns

NMOS DRAM

Abstract: KM4164BP KM4164 km4164b
Contextual Info: KM4164B NMOS DRAM 64K x 1 Bit Dynamic RAM with Page Mode FEATURES GENERAL DESCRIPTION • Performance range The KM4164B is a fully decoded NMOS Dynamic Ran­ dom Access Memory organized as 65,536 one-bit words. The design is optimized for high speed, high perfor­

ATINY 12

Abstract: atiny ATINY 12 L 64kx4 DRAM 18-PIN 20-PIN KM41464A KM41464A-12 KM41464A-15 KM41464AJ
Contextual Info: KM41464A NMOS DRAM 6 4 K x 4 Bit Dynamic RAM with Page Mode FEATURES GENERAL DESCRIPTION The KM41464A is a fully decoded 65,536x4 NMOS Dynamic Random Access Memory. The design is optimiz­ ed for high speed, high performance applications such as computer memory, buffer memory, peripheral storage

C-41256A8

Contextual Info: M it W MC-41256A8 262,144 X 8-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A8 is a 262,144-word by 8 -bit NMOS RAM module designed to operate from a single + 5-volt power supply. Advanced dynamic circuitry, including a

KM4164B-12

Abstract: samsung hv capacitor KM4164B-10 NMOS DRAM KM4164B-15 KM4164B KM4164BP KM4164 Samsung Tantalum Capacitor TCP KM4164B10
Contextual Info: KM4164B NMOS DRAM 6 4 K x 1 Bit Dynamic RAM with Page Mode FEATURES GENERAL DESCRIPTION • Performance range The KM4164B is a fully decoded NMOS Dynamic Ran­ dom A ccess M em ory organized as 65,536 one-bit words. The design is op tim ized fo r high speed, high pe rfor­

AS11D

Abstract: C-41256A8 30-pin SIMM
Contextual Info: NEC MC-41256A8 262,144 X 8-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A8 is a 262,144-word by 8-bit NMOS RAM module designed to operate from a single + 5-volt power supply. Advanced dynamic circuitry, including a

c3461

Abstract: MCM700 tr c3461
Contextual Info: MOTOROLA <s> HIGH-SPEED NMOS/MECL SENSE AMPLIFIER DUAL NMOS MEMORY SENSE AMPLIFIER SILICON MONOLITHIC INTEGRATED CIRCUIT 1 The MC3461 is a dual current sense am plifier w ith M EC L 10,000 com patible co ntro l inputs and open e m itte r com plem entary outputs.

NTE4256

Contextual Info: r MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2732A 24-Lead DIP, See Diag. 300 NMOS, 32K EPROM, UV, 200ns NTE2764 28-Lead DIP, See Diag. 510 NMOS, 64K EPROM, 200ns VppO A? 0 ~ ^ r _ 0 vcc A6 1 2 AS AS 1 B A9 A4 § j ] A11 ^ ÖE/Vpp A3 I A2 1

mb81416

Contextual Info: F U JIT S U MOS Memories • MB81416-10, MB81416-12, MB81416-15 NMOS 65,536-Bit Dynamic Random Access Memory D escription The Fujitsu MB81416 is a fully decoded, dynam ic NMOS random access memory organized as 16384 words by 4-bits. The design is optimized for high speed, high performance applications such as

MB81416-12

Abstract: MB81416 mb81416-10 MB81416-15
Contextual Info: FUJITSU „ lit, M B 81416-10 M ICROELECTRONICS. INC. M B 8M16-12 " HityQLCc. MB81416-15 16,384 WORD BY 4-BIT NMOS DYNAMIC RANDOM ACCESS MEMORY PRELIMINARY DESCRIPTION The Fujitsu MB81416 is a fu lly decoded, dynam ic NMOS random access memory organized as 16384 w ords by 4-bits. The de­

Contextual Info: NEC M C -4 1 2 5 6 A 9 2 6 2 ,1 4 4 X 9-B IT DYNAMIC NMOS RAM MODULE NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The MC-41256A9 is a 262,144-word by 9-bit NMOS dynam ic RAM module, designed to operate from a single +5 V power supply. Advanced dynamic circuitry,

P041M-1S

Abstract: pd416 PD4168 AOAE p041m S200N
Contextual Info: NEC fiPD4168 8,192 X 8-BIT NMOS XRAM NEC Electronics Inc Revision 1 Description Pin Configuration The NEC^PD4168 is an 8,192 word by 8-bit NMOS XRAM designed to operate from a single +5V power supply. The NEC *<PD4168 is termed an XRAM because it Incor­ porates some of the best features of both SRAMs Nonmultiplexed addresses, simple interface requirements

6803 microprocessor

Abstract: 68B03 EF6803CMB 68A03 EF6803CV EF6803c EF68A03CV AN0842 ef-6800 EF6801-EF6803
Contextual Info: THOMSON COMPOSANTS MILITAIRES ET SPATIAUX EF 6803 NMOS 8-BIT MICROPROCESSOR ESCRIPTION 'he EF6803 is an 8-bit single-chip microprocessor unit MPU) which significantly enhances the capabilities of 6800 amily o f parts derived dram the 6801 microcomputer. It in­

80C188XL25

Abstract: 8086 mnemonic arithmetic instruction code 80C186XL 80C186XL20 272431 80C186 80C186XL25 80C187 80C188 80C188XL
Contextual Info: 80C186XL 80C188XL 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS Y Low Power Fully Static Versions of 80C186 80C188 Y Operation Modes Enhanced Mode DRAM Refresh Control Unit Power-Save Mode Direct Interface to 80C187 80C186XL Only Compatible Mode NMOS 80186 80188 Pin-for-Pin

Microprocessors

Abstract: PROCESSOR 272431 nps a14 272431-005 8086 opcode sheet add IN 80C188XL12 8088 microprocessor block diagrammed with direction 80C186 80C186XL/80C188XL
Contextual Info: 80C186XL 80C188XL 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS Y Low Power Fully Static Versions of 80C186 80C188 Y Operation Modes Enhanced Mode DRAM Refresh Control Unit Power-Save Mode Direct Interface to 80C187 80C186XL Only Compatible Mode NMOS 80186 80188 Pin-for-Pin

YS18A

Abstract: MSC2305-10YS18A MSC2305
Contextual Info: OKI semiconductor MSC2305YS18A_ 524,288 BY 9 BIT DYNAMIC RAM MODULE < Page Mode Type > GENERAL DESCRIPTION The Oki MSC2305YS18A is a fully decoded, 524,288 words x 9 bit NMOS dynamic random access memory composed of eighteen 256K DRAMs in plastic leaded chip carrier MSM41256AJS .

NTE2107

Contextual Info: NTE2107 Integrated Circuit NMOS, 4K Dynamic RAM DRAM Description: The NTE2107 is a 4096 word by 1 bit dynamic random access memory (RAM) that incorporates the latest memory design features and can be used in a wide variety of applications, from those which

Contextual Info: intei M80C186 CHMOS HIGH INTEGRATION 16-BIT MICROPROCESSOR Military I Operation Modes Include: — Enhanced Mode Which Has — DRAM Refresh — Power-Save Logic — Direct Interface to New CMOS Numerics Coprocessor — Compatible Mode — NMOS M80186 Pin for Pin

272431

Abstract: IN 80C188XL12 80C186 80C186XL 80C186XL20 80C186XL25 80C187 80C188 80C188XL 80C188XL20
Contextual Info: 80C186XL 80C188XL 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS Y Low Power Fully Static Versions of 80C186 80C188 Y Operation Modes Enhanced Mode DRAM Refresh Control Unit Power-Save Mode Direct Interface to 80C187 80C186XL Only Compatible Mode NMOS 80186 80188 Pin-for-Pin

Contextual Info: PRELIM INARY a 80C188 CMOS High Integration 16-Bit Microprocessor Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Operation Modes Include: — Enhanced mode which has • DRAM Refresh Control Unit • Power-save mode — Compatible Mode • NMOS 80188 pin-fbr-pin replacement for

80C186

Abstract: 80C187 M80C186 M80C186XL M80C186XL12 M80C186XL16 M80C186XL20
Contextual Info: M80C186XL20 16 12 10 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSOR Y Low Power Full Static Version of M80C186 Y Operation Modes Enhanced Mode DRAM Refresh Control Unit Power-Save Mode Direct Interface to 80C187 Compatible Mode NMOS 80186 Pin-for-Pin Replacement for Non-Numerics

OV56

Contextual Info: molaic 256k x 8 DRAM Module MD8256RKX-12/15/20 Issue 1.0: October 1988 Sem iconductor Inc. 262,144 x 8 NMOS High Speed Dynamic RAM Pin Definition Features A8 Access Times of 120/150/200 ns Power Consumption 2800mW Active 160mW Standby Industry Standard Pin Out