NOV08 Search Results

vfc 1200

Abstract: BSM150GAL120DN2E3166 C67076-A2112-A70 dc chopper circuit
Contextual Info: BSM150GAL120DN2E3166 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC BSM150GAL120DN2E31661200V 210A Package Ordering Code HALF BRIDGE GAL 2 C67076-A2112-A70

Contextual Info: M echanical 2. D im e n s io n s : S c h e m a t ic : o0 .5 60 Max 0.550 Max -O 10 -O 9 4 o X D 2 o ro LO o L j ne Secondary 2 o -o 5 O- cx I— x o CJl 5. E le c t r ic a l S p e c if ic a t io n s : o 0.020 -0.400- 0.098 0CL: Pins Leakage EPOXY O O L: (Pins

AOT412

Contextual Info: AOT412 N-Channel SDMOSTM Power Transistor General Description Features The AOT412 and AOT412L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology

BF999

Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package

AOI452A

Contextual Info: AOI452A N-Channel SDMOSTM Power Transistor General Description Features The AOI452A is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology

0L1950

Abstract: XR151
Contextual Info: 1. M e c h a n i c a l 2. D im e n sio n s: S c h e m a tic: 0 o0 .5 6 0 Max 0 .5 5 0 Max -O X u 2 o K m O L 1y -ine; i o -O 6 CL >, m 5 ot o a> 0 .0 2 0 10 4 o E lectrical S p e c ificatio n s: o Typ -0.400- 0.0 9 8 - 10 0CL: Pins Le aka g e 6 2-5) 2 .5 m H

L121A

Abstract: voltage regulator sot 223 TO-263 LDO 1V output 1A linear voltage regulator sot223 niko-sem sot-223 voltage regulator marking
Contextual Info: NIKO-SEM L121AX Series 1A Fixed Voltage Low SOT-223, TO-252, Dropout Linear Regulator LDO - Preliminary TO-220,TO-263 GENERAL DESCRIPTION FEATURES The L121AX Series are positive and low dropout three-terminal voltage regulators with 1A output current capability. These

FT4016

Abstract: TRIAC 8 Amp 800 Fagor triacs 5 amp triac 100 AC 120 triac 380 V 100 A triac FT401
Contextual Info: FT4016.P INSULATED HIGH COMMUTATION TRIAC INSULATED TOP3 On-State Current Gate Trigger Current 40 Amp £ 50 mA 16 Off-State Voltage 600 V ÷ 800 V * Standard current TRIAC * Low thermal resistance with clip bounding * Low thermal resistance isolation ceramic for FT.P

TRIAC 8 Amp 800

Abstract: Triac 50 amp 380 V 100 A triac
Contextual Info: FT4018.P INSULATED STANDARD TRIAC INSULATED TO3P On-State Current Gate Trigger Current 40 Amp £ 50 mA 18 Off-State Voltage 600 V ÷ 800 V * Standard current TRIAC * Low thermal resistance with clip bounding * Low thermal resistance isolation ceramic for FT.P

AOD4144

Contextual Info: AOD4144 N-Channel SDMOSTM Power Transistor General Description Features The AOD4144 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology

AOI4140

Contextual Info: AOI4140 N-Channel SDMOSTM Power Transistor General Description Features The AOI4140 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behaviar. This universal technology

AO4728L

Abstract: ao4728
Contextual Info: AO4728L N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4728L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is

Contextual Info: Mechanical Dimensions: 0 .5 6 0 2. Schematic: Max 0 .5 5 0 o 10 o 9 o 6 Max m e, X □ O n LD o L m i— 5. Electrical - o 0CL: CD 0.0 2 0 Le aka g e o Typ mpedanoe T u rn s EP0XY o o 410uH ±5% o o 1 o 5 BOTTOM VIEW (P in s 1-5) 10,0uH 25 (1- DC Res: (Pins

VPS05604

Abstract: Bc 140 transistor
Contextual Info: BC 846S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604

transistor BC 660

Abstract: 846U H12E
Contextual Info: BC 846U NPN Silicon AF Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197

847S

Abstract: VPS05604 marking 1cs
Contextual Info: BC 847S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604

108-5660

Contextual Info: 7 8 TH I S S3 DRAW I NG IS UNPUBLI S H E D . C O P Y R I G H T 2000 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL F OR PUBLICATION RIGHTS .425 REF 7. 6±0 64 0.05 . 2 d = 0 . 64± 0. 025 DE S C R I P T I O N 3 4 REVISED REVISED REVISED REVISED B B Cl DWN

AOD4144

Abstract: AOI4144 aod41
Contextual Info: AOD4144/AOI4144 N-Channel SDMOSTM Power Transistor General Description Features The AOD4144/AOI4144 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology

AON7430L

Contextual Info: AON7430L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7430L uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.

21A1

Abstract: LMR-240
Contextual Info: NOTES: I. MATERIALS AND FINISHES: BODY - BRASS, ALBALOY PLATING C O N T A CT -BRASS, GOLD PLATING INSULATOR - P T F E , NATURAL 2. ELECTRICAL: A. I M P E D A N C E : 50 O H M B. F R E Q U E N C Y R A N G E : DC 0 - I I G H z C. D I E L E C T R I C W I T H S T A N D I N G V O L T A G E :

Contextual Info: AON6706 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AON6706 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is

H12E

Contextual Info: BC 856U PNP Silicon AF Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197

Marking 3ds sot

Abstract: VPS05604 TRANSISTOR BC 650 c
Contextual Info: BC 856S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604

BB515

Abstract: BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package