NPN IC 25MA Search Results
NPN IC 25MA Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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D1U74T-W-1600-12-HB4AC | Murata Manufacturing Co Ltd | AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs |
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D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR |
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MRMS591P | Murata Manufacturing Co Ltd | Magnetic Sensor |
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SCR410T-K03-PCB | Murata Manufacturing Co Ltd | 1-Axis Gyro Sensor on Evaluation Board |
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MRMS581P | Murata Manufacturing Co Ltd | Magnetic Sensor |
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NPN IC 25MA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2SC4296Contextual Info: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max |
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2SC4296 Pulse20) 400min 10typ 85typ 100max FM100 2SC4296 | |
2SC4296Contextual Info: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max |
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2SC4296 Pulse20) 400min 10typ 85typ 100max FM100 2SC4296 | |
2SC5370
Abstract: FM20
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2SC5370 10max 40min 70min 90typ 120typ O220F) 2SC5370 FM20 | |
2SC5370
Abstract: FM20 2402 transistor
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2SC5370 10max 40min 70min 90typ 120typ O220F) 2SC5370 FM20 2402 transistor | |
2SC4130
Abstract: FM20 transistor+2sC4130
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2SC4130 Pulse14) 100max 400min 15typ 50typ O220F) 2SC4130 FM20 transistor+2sC4130 | |
2SD2141 equivalent
Abstract: 2SD2141 FM20 DMS-10
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2SD2141 Pulse10) 10max 20max 1500min 20typ 95typ O220F) 120mA 2SD2141 equivalent 2SD2141 FM20 DMS-10 | |
TMS1000Contextual Info: 2SC4512 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1726 Conditions Ratings Unit V ICBO VCB=120V 10max µA VCEO 80 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC=25mA 80min V IC 6 A hFE VCE=4V, IC=2A 50min 10.2±0.2 3 A VCE(sat) IC=5A, IB=0.2A |
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2SC4512 2SA1726) 10max 80min 50min 20typ 110typ MT-25 to100) TMS1000 | |
2SC4064Contextual Info: 2SC4064 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1567 V(BR)CEO IC 12 A hFE µA VEB=6V 10max µA IC=25mA 50min V VCE=1V, IC=6A 50min IB 3 A VCE(sat) IC=6A, IB=0.3A 0.35max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 40typ MHz 150 °C COB |
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2SC4064 100max 10max 50min 35max 40typ 180typ 2SA1567) O220F) 2SC4064 | |
2SC4382
Abstract: 2SC4381 FM20 2SC4382 transistor DSA0016509
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2SC4381/4382 2SA1667/1668) 10max 150min 200min 60min 15typ 35typ O220F) 2SC4382 2SC4381 FM20 2SC4382 transistor DSA0016509 | |
2SC4064
Abstract: 2SA1567 FM20
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2SC4064 2SA1567) 100max 10max 50min 35max 40typ 180typ 2SC4064 2SA1567 FM20 | |
2SD2017
Abstract: FM20
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2SD2017 O220F) 2000min 100max 10max 250min 20typ 65typ 150x150x2 100x100x2 2SD2017 FM20 | |
2SC3890
Abstract: FM20
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2SC3890 100max 400min Pulse14) 10typ 50typ O220F) 2SC3890 FM20 | |
2SC3179
Abstract: 2SA1262
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2SC3179 2SA1262) 100max 60min 40min 15typ 60typ 29typ 2SC3179 2SA1262 | |
2SC4662
Abstract: FM20
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2SC4662 100max 400min 20typ 30typ Pulse10) O220F) 2SC4662 FM20 | |
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Contextual Info: 2SC4065 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1568 ±12 A IC VEB=6V 60max mA IC=25mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A |
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2SC4065 100max 60max 60min 50min 35max 24typ 180typ 2SA1568) O220F) | |
2SC3852A
Abstract: 2sc3852 FM20 3852-A DSA0016508
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2SC3852/3852A 100max 60min 80min 500min 15typ 50typ O220F) 2SC3852 2SC3852A 2SC3852A FM20 3852-A DSA0016508 | |
2SC4662
Abstract: FM20
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2SC4662 100max 400min 20typ 30typ Pulse10) O220F) 2SC4662 FM20 | |
2SC4511
Abstract: 2SA1725 FM20
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2SC4511 2SA1725) 10max 80min 50min 20typ 110typ to100) to140) 2SC4511 2SA1725 FM20 | |
2SC2922
Abstract: 2SA1216 IC-25 DSA0016507
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2SC2922 2SA1216) MT-200 100max 180min 50typ 250typ 30min 2SC2922 2SA1216 IC-25 DSA0016507 | |
2SC2023Contextual Info: 2SC2023 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 300 V IEBO VEBO 6 V V BR CEO IC 2 A hFE 2SC2023 Unit VCB=300V 1.0max mA VEB=6V 1.0max mA IC=25mA 300min V VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 40(Tc=25°C) W |
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2SC2023 MT-25 300min 30min 10typ 75typ 100x100x2 50x50x2 2SC2023 | |
2SC5333
Abstract: FM20
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2SC5333 300min 30min 10typ 75typ O220F) 2SC5333 FM20 | |
2SC2922
Abstract: transistor 2sc2922 2SA1216 2sc2922 safe operating area
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2SC2922 2SA1216) MT-200 100max 180min 50typ 250typ 2SC2922 transistor 2sc2922 2SA1216 2sc2922 safe operating area | |
2SD2017
Abstract: FM20
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2SD2017 O220F) 2000min 100max 10max 250min 20typ 65typ 150x150x2 100x100x2 2SD2017 FM20 | |
2sd2083
Abstract: 2sb1383
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2SD2083 2SB1383) 10max Pulse40) 120min 2000min 20typ 340typ MT-100 2sd2083 2sb1383 |