NPN TRANSISTORS, VIDEO AMPLIFIERS Search Results

SOT128

Abstract: BFQ162 SOT54 95 sot223
Contextual Info: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Video transistors RF & MICROWAVE SEMICONDUCTORS & MODULES WIDEBAND TRANSISTORS FOR APPLICATION IN VIDEO OUTPUT AMPLIFIERS IN MONITORS package application 'cm mA SOT54 (TO-92) npn cascode driver

BF297

Abstract: BF299 BF298 BF29T CEB npn
Contextual Info: BF297- BF 298 • BF 299 NPN HIGH VOLTAGE VIDEO AMPLIFIERS ÄgfJ THE BF297, BF298, BF299 ARE NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO AMPLIFIERS IN TELEVISION RECEIVERS. THEY FEATURE GOOD FREQUENCY CHARACTERISTICS. II• CASE TO-92F CEB

Contextual Info: BF 391 • BF 392 ■ BF 393 NPN HIGH VOLTAGE VIDEO AMPLIFIERS CASE TO-92A THE BP391, BF392, BF393 ARE NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO AMPLIFIERS IN TELEVISION RECEIVERS. THEY FEATURE 200V MINIMUM COLLECTOR-EMITTER BREAKDOWN VOLTAGE AND

BE393

Abstract: BF392 T0-92A BP391 BF393
Contextual Info: BF 391 • BF 392 • BF 393 NPN HIGH VOLTAGE VIDEO AMPLIFIERS ¡¡8IB ? CASE TO-92A THE BP391, BP392, BF393 ARE NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO AMPLIFIERS IN TELEVISION RECEIVERS. THEY FEATURE 200V MINIMUM COLLECTOR-EMITTER BREAKDOWN VOLTAGE AND

Contextual Info: BF 297 •BF 298 • BF 299 W W J F / r f NPN HIGH VOLTAGE VIDEO AMPLIFIERS is^ if THE BF297, BF298, BF299 ARE NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO AMPLIFIERS IN TELEVISION RECEIVERS. THEY FEATURE GOOD FREQUENCY CHARACTERISTICS. CASE TO-92F

BF173

Abstract: BF173 Transistor bf 494 transistor transistor bf 494 transistor BF 489 BF 494 C emetteur video iran cbc6 bf 173 transistor
Contextual Info: BF 173 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN S ILIC IU M , PLA N A R E P IT A X IA U X The NPN planar epitaxial transistor BF 173 intended for use in L F video amplifiers un­ controlled stages of television receivers. Le transistor NPN "planar é p ita xia l" BF 173 est

M8007

Abstract: M8006 MM800 MM8006 MM8007 K660
Contextual Info: MM8006 silicon MM8007 NPN SILICON RF SMALL-SIGNAL TRANSISTORS NPN SILICON RF SMALL-SIGNAL TRANSISTORS . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers in military and industrial equipment. Suitable for use in video wideband and general high-frequency amplifier applications

MJE370

Abstract: MJE3439 JE3440 MJE3370 MJE3440 MJE3371 MJE371 MJE-3439
Contextual Info: MJE3370 SILICON For SpecificationS; See MJE370 Data. ^ U E 3 3 7 1 (SILICON) For Specifications, See MJE371 Data. MJE3439, MJE3440 (SILICON) 0.3 AMPERE NPN SILICO N HIG H-VO LTAG E POWER TRANSISTORS NPN SILICON POWER TRANSISTORS . . . designed for use as video o utput amplifiers in television receivers

bf459 transistor

Abstract: BF457-BF458-BF459 BF458-BF459 CIRCUIT DIAGRAM OF Bf459 BF459 ST MICROELECTRONICS BF459 BF457 BF458
Contextual Info: BF457 BF458-BF459 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTION The BF457, BF458 and BF459 are silicon planar epitaxial NPN transistors in Jedec TO-126 plastic package. They are particularly intended for use as video output stages in colour and black and white TV

BF167

Abstract: ST CB4 pbgi J BF167 bf 167 AF1V OF BF167 transistor f 482
Contextual Info: BF167 NPN S IL IC O N T R A N S IS T O R S , P LA N A R TRANSISTORS NPN SILICIUM , PLANAR The NPN planar transistor BF 167 is intended for use in IF video amplifiers AGC controlled stage of television receivers. Le transistor NPN planar BF 167 est destiné aux amplifica­

BF258

Abstract: BF259 BF257 210E BF 258 bf258bf transistor 139 BF
Contextual Info: BF 257 BF 258 BF 259 S I L I C O N P L ANAR NPN HIGH VOLTAGE VIDEO AMPLIFIERS The BF 257, BF 258 and BF 259 are silicon planar epitaxial NPN transistors in TO-39 metal case. They are p a rticularly designed for video output stages in CTV and MTV sets, class A audio output stages and drivers fo r horizontal deflection circuits.

VQB200

Abstract: BF393 BF391 BF392 VCB-60V
Contextual Info: CASE THE BF391, BF392, BF393 ARE NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO AMPLIFIERS IN TELEVISION RECEIVERS. THEY FEATURE 200V MINIMUM COLLECTOR-EMITTER BREAKDOWN VOLTAGE AND T0-92A GOOD FREQUENCY CHARACTERISTICS. ABSOLUTE MAXIMUM RATINGS

gk12

Abstract: 160i NPN transistor 458 BF459 BF457 BF458 sot326 gk12 f
Contextual Info: BF 459 SILICON PLANAR NPN HIGH VOLTAGE VIDEO AMPLIFIERS The BF 4 5 7 , BF 4 5 8 and BF 4 5 9 are silicon planar epitaxial NPN transistors in Jedec T O -1 2 6 plastic package. They are particularly intended for use as video o utpu t stages in colour and black and w hite T V receivers, class A o utput stages and drivers for horizontal

MC14576

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14576A MC14577A Advance Information Dual Video Amplifiers CMOS P SUFFIX PLASTIC DIP CASE 626 Each of these devices contains two amplifiers realized in CMOS. Each amp also employs two lateral NPN bipolar transistors.

bc639

Abstract: BC635 BC637 bc639 equivalent bc635 datasheet BC635 TRANSISTOR E C B BC639 datasheet transistor bc639 driver transistor hfe 60 BC639 collector
Contextual Info: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers 1.Emitter 2.Base 3.Collector TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter

BF 184 transistor

Abstract: BF457 bf459 IC 41 BF transistors 458
Contextual Info: BF 457 BF 458 SILICON P LA N A R NPIN BF 459 PRELIMINARY DATA HIGH VOLTAGE VIDEO AMPLIFIERS The BF: 457, BF 458 and BF 459 are silicon planar epitaxial NPN transistors in Jedec T O -1 26 plastic package. They are particularly intended fo r use as video o u tp u t stages in

bc639

Abstract: BC637 BC635 TRANSISTOR E C B BC635 bc639 equivalent
Contextual Info: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers 1.Emitter 2.Collector 3.Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter

bc639

Abstract: BC635 TRANSISTOR E C B applications of Transistor BC639 BC635-16 BC637
Contextual Info: Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Driver stages of audio/video amplifiers.

bf658

Abstract: bf659
Contextual Info: BF657 BF658-BF659 MEDIUM POWER VIDEO AMPLIFIERS DESCRIPTION The BF657, BF658 and BF659 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for application with precision ”IN-LINE” large screen CRT thermal

Contextual Info: Philips Semiconductors Product specification NPN medium power transistors BCX54; BCX55; BCX56 FEATURES PINNING • High current max. 1 A • Low voltage (max. 80 V). PIN APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base Driver stages of audio and video amplifiers.

BC639

Abstract: BC635 TRANSISTOR E C B
Contextual Info: Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Driver stages of audio/video amplifiers.

motorola cmos

Abstract: MC14576
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MC14576A MC14577A Advance Information Dual Video Amplifiers CMOS Each of these devices contains two amplifiers realized in CMOS. Each amp also employs two lateral NPN bipolar transistors. The MC14576A contains two internally-compensated operational amplifiers.

"MARKING CODE BM"

Abstract: Marking BH SOT89
Contextual Info: Philips Semiconductors Product specification NPN medium power transistors BCX54; BCX55; BCX56 FEATURES PINNING • High current max. I A • Low voltage (max. 80 V). PIN APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Driver stages of audio and video amplifiers.

mc14577cp

Abstract: MC14577 MC14577CF MC14576 MC14577C MC14576C MC14576CP MC14577b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 14576C M C 14577C Advance Information Dual Video Amplifiers CMOS Each of these devices contains two amplifiers realized in CMOS. Each amp also employs two lateral NPN bipolar transistors. The MC14576 contains two internally-compensated operational amplifiers.