NTE211 Search Results

NTE211 Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NTE211		NTE Electronics	Silicon Complementary Transistor General Purpose Output & Driver	Original	PDF	22.3KB	2
NTE211		NTE Electronics	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor PNP, Si, General Purpose Output & Driver, Pkg Style TO202	Scan	PDF	34.06KB	1
NTE211		NTE Electronics	Transistors - Bi-Polar	Scan	PDF	65.28KB	1
NTE21128		NTE Electronics	Integrated Circuit NMOS, 128K (16K x 8) UV EPROM	Original	PDF	37.63KB	6
NTE21128		NTE Electronics	Microprocessor and Memory IC Pinouts	Scan	PDF	29.41KB	1
NTE2114		NTE Electronics	Integrated Circuit MOS, Static 4K RAM, 300ns	Original	PDF	28.84KB	4
NTE2117		NTE Electronics	MICROPROCESSOR & MEMORY CIRCUITS	Scan	PDF	166.03KB	1

NTE211 Price and Stock

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NTE Electronics Inc


NTE Electronics Inc NTE211 Transistor, bjt, pnp,75V V(Br)Ceo,1A I(C),to-202 Rohs Compliant: Yes \|Nte Electronics NTE211
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE211	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NTE Electronics Inc NTE2117 16K Dynamic RAM(DRAM) - 200ns - 16-lead DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	NTE2117		3			1 $13.63 10 $12.39 100 $9.68 1000 $8.67 10000 $8.67	Buy Now
NTE Electronics Inc NTE21128 EPROM - 128K - 250ns - 28-lead DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	NTE21128		2			1 $36.02 10 $31.79 100 $26.12 1000 $24.76 10000 $24.76	Buy Now
NTE Electronics Inc NTE2114
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	NTE2114		3			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Component Electronics, Inc	NTE2114		5			1 $11.54 10 $11.54 100 $8.65 1000 $7.50 10000 $7.50	Buy Now
Vyrian	NTE2114		290			1 - 10 - 100 - 1000 - 10000 -	Get Quote

NTE211 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NTE21128 Contextual Info: NTE21128 Integrated Circuit NMOS, 128K 16K x 8 UV EPROM Description: The NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user	Original	NTE21128 NTE21128 250ns	PDF
Contextual Info: t* MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE8255 40-Lead DI P, See Diag. 299 NMOS, Programmable Preipheral Interface PA3 I PA2 f PA1 § PAO 1 RO\| C 5\| 1 I 1 Q PC6 0 PC5 n PC4 Q pco Q pci Q PC2 Q PC3 g PBO Bo GND Al A0 PC7 PB1 r a PB2 NTE21128	OCR Scan	NTE8255 40-Lead NTE21128 26-Lead 250ns NTE21256 16-Lead 150ns NTE65101 22-Lead	PDF
NTE2117 Contextual Info: NTE2117 Integrated Circuit 16K Dynamic Random Access Memory RAM Description: The NTE2117 is a new generation MOS dynamic random access memory circuit in a 16−Lead DIP type package organized as 16,384 x 1−bit and incorporates advanced circuit techniques designed	Original	NTE2117 NTE2117 16-Lead Note18. Note19.	PDF
NTE211 Abstract: NTE210 Contextual Info: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications	Original	NTE210 NTE211 500mA, 20MHz NTE211 NTE210	PDF
NTE2114 Contextual Info: NTE2114 Integrated Circuit MOS, Static 4K RAM, 300ns Description: The NTE2114 1024–word 4–bit static random access memory is fabricated using N–channel silicon– gate technology. All internal circuits are fully static and therefore require no clocks or refreshing for	Original	NTE2114 300ns NTE2114 225mW 300ns	PDF
NTE65101 Abstract: NTE21128 NTE21256 NTE8255 GJA9 Contextual Info: t* MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE8255 40-Lead DI P, See Diag. 299 NMOS, Programmable Preipheral Interface NTE21128 28-Lead DIP, See Diag. 446 NMOS, 128K EPROM, UV, 250ns NTE21256 16-Lead DIP, See Diag. 248 NMOS, 256k Dynamic RAM (DRAM), 150ns	OCR Scan	NTE8255 40-Lead NTE21128 28-Lead 250ns NTE21256 16-Lead 150ns NTE65101 22-Lead GJA9	PDF
NTE210 Abstract: NTE211 Contextual Info: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type pack age designed for general purpose, medium voltage, medium power amplifier and driver applications	Original	NTE210 NTE211 500mA, 20MHz NTE210 NTE211	PDF
NTE130 Abstract: 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211 Contextual Info: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts BV ebo " fe Pd T 4 30 Min 8 150 80 (CER) 5 20 Min 50 1.8 4 80 (CER) 5 20 Min 50* 4 Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) 'c 1.5 BVcbo BVceo 70 70 (CER)	OCR Scan	27MHz, NTE197) T0220 NTE196) 27MHz) T039HS NTE130 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211	PDF
Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q	OCR Scan	NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead	PDF
NTE130 Abstract: NTE199 NPN RF Amplifier NTE241 Contextual Info: BI-POLAR TRANSISTORS Olag. No. •c 0VCBO BVceo BV ebo hFE Pd •t RF Pwr Amp/Driver, CB P0 = 3.5W Min, 27MHz, 12.5V T 039 21a 1.5 70 70 (CEFt) 4 30 Min 8 150 NPN-Si Audio Power Output & Medium Power Switching (Compì to NTE 197) T0220 11 a 7 90 80 (CER)	OCR Scan	27MHz, NTE234) NTE211) NTE210) T0220 T0220 NTE130 NTE199 NPN RF Amplifier NTE241	PDF
NTE130 Abstract: NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192 Contextual Info: N T E ELECTRONICS INC S2E D • b M B l S S ^ a D O S S I 6 024 B I N T E TRANSI5TÖ BS-6U PO LA B T —33—01 Maximum Breakdown Voltage Collector to Base Volts) Collector to Emitter (Volts) Emitter Io Basa (Volts) Typical Forward Current Gain Maximum Collector	OCR Scan	T-33-01 NTE192A) T092HS 27MHZ, 226MP NTE226 T0237 45MHZ NTE199) 50MHZ) NTE130 NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192	PDF
a5 gnd Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128 Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns	OCR Scan	NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead a5 gnd NTE4164 NTE2117 NTE2164 BB 298 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128	PDF