OP508 Search Results

QP508FB

Contextual Info: . O PTEK Product Bulletin OP508F June 1996 NPN Silicon Phototransistors Types OP508FA, QP508FB, OP5Q8FC Features • • Flat lensed for w ide acceptance angle Easily stackable on 0.100 inch 2.54 mm hole centers • Low cost plastic package • Mechanically and spectrally matched

OP508FA

Contextual Info: OPTEK TECHNOLOGY INC DfaE D | blTflSäO DDDGISE 3 | g O p to e le c tr o n ic * D i v i i i o n T R W Electronic Components Group Product Bulletin 5 1 1 2 mmm « v v a _ T - 4 1 - U I January 1985 N P N Silicon Phototransistors Types OP5Q8FC, OP508FB, OP508FA

OP168F

Abstract: OP290C OP508F OP508FA OP508FB OP508FC
Contextual Info: OPTEK Product Bulletin OP508F June 1996 NPN Silicon Phototransistors Types OP508FA, QP508FB, OP5Q8FC Features • Flat lensed for wide acceptance angle • Easily stackable on 0.100 inch 2.54 mm hole centers • Low cost plastic package • Mechanically and spectrally matched

Contextual Info: OPTEK Product Bulletin OP508F June 1996 NPN Silicon Phototransistors Types OP508FA, QP508FB, OP508FC Features • Flat lensed for wide acceptance angle • Easily stackable on 0.100 inch 2.54 mm hole centers • Low cost plastic package • Mechanically and spectrally matched

Contextual Info: OPTEK TECHNOLOGY INC DL.E D | bTiflSflO DDDGISE 3 | O p to e le c tro n ic * D iv i ii o n TRW Electronic Components Group M i f l h 'w gg Product Bulletin 5 1 1 2 _ _ _ mmm • ■ . Ja nu ary 1985 NPN Silicon Phototransistors Types OP5Q8FC, OP508FB, OP508FA

OP168F

Abstract: OP508F OP508FA OP508FB OP508FC
Contextual Info: 0 OPTEK Product Bulletin OP508F June 1996 NPN Silicon Phototransistors Types OP5Q8FA, OP5Q8FB, OP5Q8FC .0 6 5 .0 5 5 ( 1 .6 5 ( 1 .4 0 ) .1 2 0 (3 .0 5) ' :T 0R- v .1 0 0 ( 2 .5 4 ) NGM = + - / / - J_ OPTICAL C. .0 3 5 .0 2 5 (0 .8 9 ) (0 .6 4 )

OP268FA

Abstract: OP268FB OP268FC OP508F OP538F
Contextual Info: OPTEK Product Bulletin OP268F June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP268FA, OP268FB, OP268FC • Flat lensed for wide radiation angle • Easily stackable on 0.100" 2.54 mm hole centers • Mechanically and spectrally matched to the OP508F series phototransistor

Contextual Info: OPTEK Product Bulletin OP168F June 1996 G aA s Plastic Infrared Emitting Diodes Types OP168FA, OP168FB, OP168FC Features • Flat lensed for wide radiation angle • Easily stackable on 0.100 inch 2.54mm hole centers • Mechanically and spectrally matched

Contextual Info: Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 OP268 Features: • • • • OP169 OP269 Flat lens for wide radiation angle OP168, OP268 Integral lens for narrow beam angle (OP169, OP269) Easily stackable on 0.100” (2.54 mm) hole centers

OP168F

Abstract: OP169 OP268 OP268FPS OP269 OP508F OP509 OP538F OP269A OP268FA
Contextual Info: Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 OP268 Features: • • • • OP169 OP269 Flat lens for wide radiation angle OP168, OP268 Integral lens for narrow beam angle (OP169, OP269) Easily stackable on 0.100” (2.54 mm) hole centers

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

OPB960N55

Abstract: marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 MEXICO TRANSMISSIVE SENSOR OPB840L55 OPB365T55 OPB875N51 OPB970N51
Contextual Info: OPTEK products are in applications that are a part of your everyday life. We can be found in automobiles, office equipment, vending machines, banks, hospitals, home security, architectural lighting, industrial plants, military and aerospace applications and even at sports games or

Contextual Info: Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 OP268 Features: • • • • OP169 OP269 Flat lens for wide radiation angle OP168, OP268 Integral lens for narrow beam angle (OP169, OP269) Easily stackable on 0.100” (2.54 mm) hole centers

OP268FA

Contextual Info: @ OPTEK Product Bulletin OP268F April 1993 ^ GaAIAs Plastic Infrared Emitting Diodes Types OP268FA, OP268FB, OP268FC DIMENSIONS ARE III INCHES IMILLIMETERSi 'FDR IDENTIFICATION PURPOSES. ANODE LEAD IS .06 I I . 52! NOM. LONGER THAN CATHODE LEAD Features Absolute Maximum Ratings Ta = 25°C unless otherwise noted

KT853

Abstract: KT853A OH90U KT826 K8702 KT850B KT8150 KT851A KR8803 kt853a2
Contextual Info: >PTEK TECHNOLOGY S7E IN C D • b7TA 5ôü O O O l l b a □ PAGE PART NUMBER REPLACED BY NO CHANGE it 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE NO CHANGE NO CHANGE 12-4 12-4 12-4 CNY17/Î CNY17/2 CNY17/3 CNY17/4

transistor 935

Abstract: OPB607A OPB606B phototransistor as sensor OPB606 OPB606A OPB607 OP165 OP268 OPB606C
Contextual Info: Reflective Object Sensor OPB606A, OPB606B, OPB606C OPB607A, OPB607B, OPB607C Features: • Choice of phototransistor OPB606 or photodarlington (OPB607) output • Unfocused for sensing diffuse surface • Low cost plastic housing • Filtered (OPB606, OPB607)

OP168F

Abstract: OP168FA OP168FB OP168FC OP508F OP538F 300pps Infrared Emitting Diodes
Contextual Info: OPTEK Product Bulletin OP168F June 1996 GaAs Plastic Infrared Emitting Diodes Types OP168FA, OP168FB, OP168FC .065 1.65 .055 (1.40) .130 (3.30) .120 (3.05)' EMITTING SURFACE □ •165 (4.19) .155 (3.94) .090 (2.29) .070 (1.78) .100 (2.54) NOM J_ T

OP268

Abstract: OP165 OPB606 OPB606A OPB606B OPB606C OPB607A OPB607B OPB607C transistor 935
Contextual Info: Reflective Object Sensor OPB606A, OPB606B, OPB606C OPB607A, OPB607B, OPB607C Features: • Choice of phototransistor OPB606 or photodarlington (OPB607) output • Unfocused for sensing diffuse surface • Low cost plastic housing • Filtered (OPB606, OPB607)

Contextual Info: Reflective Object Sensor OPB711, OPB712 Features: • • • • Choice of phototransistor or photodarlington output Unfocused for sensing diffuse surface Low-cost plastic housing Choice of filter or unfiltered Product Photo Here Description: OPB711 consists of an infrared emitting diode and an NPN silicon phototransistor, mounted “side-by-side” on

Contextual Info: 0 O P T E K Product Bulletin OP268F June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP268FA, OP268FB, OP268FC Features • Flat tensed for wide radiation angle • Easily stackable on 0.100’ (2.54 mm hole centers • Mechanically and spectrally matched

OPB711

Abstract: OPB712 REFLECTIVE OBJECT SENSOR OP168F OP268 OP508F OP538F photo darlington sensor reflective photo sensor DARLINGTON phototransistor 14
Contextual Info: Reflective Object Sensor OPB711, OPB712 Features: • • • • Choice of phototransistor or photodarlington output Unfocused for sensing diffuse surface Low-cost plastic housing Choice of filter or unfiltered Product Photo Here Description: OPB711 consists of an infrared emitting diode and an NPN silicon phototransistor, mounted “side-by-side” on

REFLECTIVE OBJECT SENSOR

Abstract: ir sensor for object detection using led ir sensor 0038 OBJECT SENSOR OPB609 OPB609AX OPB609GU OPB609RA OP508 LED 020 ir sensor
Contextual Info: Reflective Object Sensor OPB609 Series Features: • • • • OP609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are

Contextual Info: Reflective Object Sensor OPB711, OPB712 Features: • Choice of phototransistor or photodarlington output  Unfocused for sensing diffuse surface  Low-cost plastic housing  Choice of filter or unfiltered Product Photo Here Description:

ir sensor for object detection using led

Abstract: vibra tite OPB609AX REFLECTIVE OBJECT SENSOR OPB609 OPB609GU OPB609RA reflective sensor 4 pin
Contextual Info: Reflective Object Sensor OPB609 Series Features: • • • • RA OPB609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output GU AX Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are