OPERATIONAL AMPLIFIER 2GHZ Search Results

TP3554

Contextual Info: W T E L E D W E P H L B R IC K High Speed Wideband Operational Amplifier TP3554 The TP3554 is a fully differential, wideband operational amplifier with a 2GHz gain-bandwidth product, a 1000V//*sec slew rate, and a full ± 10V ± 100mA output. Settling time for a 10V step to ± 0 .0 1 % is guaranteed

CC45T47K240G5C2

Abstract: Sumitomo 1295SA SA1515BX101M2HX5 SK04B102M11A6 GRP155F51A474ZDO2B PCB Rogers RO4003 substrate AVX0402YG104ZAT2A HIGH GAIN FET 1295SA Presidio Components CAP
Contextual Info: AMMC-5024 30KHz–40 GHz TWA Operational Guide Application Note 5359 Introduction Device Description This application note is an operational guide for Avago’s AMMC-5024 Traveling Wave Amplifier. The AMMC-5024 is a broadband PHEMT GaAs MMIC designed for medium output power 22.5dBm P1dB

SL9999

Abstract: X8 diode zener japan zener diode 4.7V Zener diode x6 op closed-loop 60MHZ X4 diode zener zener 4.7V LC20 zener diode 6.2v
Contextual Info: PRELIMINARY INFORMATION DS2078 - 2.3 SL9999 400MHz ADC DRIVER-AMPLIFIER OUTPUT VCC 19 N/C 20 INPUT VCC 1 N/C 3 BIAS 2 The SP9999 is a monolithic high speed high performance operational amplifier. Although primarily intended to drive the inputs of analog to digital converters, the device is capable of

BF170

Abstract: bf200 datasheet BF200 transistor EL2075CN EL2075C EL2075CS BF200 operational amplifier 2ghz
Contextual Info: 2GHz GBWP Gain-of-10 Stable Operational Amplifier Features General Description • 2GHz gain-bandwidth product • Gain-of-10 stable • Conventional voltage-feedback topology • Low offset voltage = 200µV • Low bias current = 2µA • Low offset current = 0.1µA

cdi ignition circuit diagram

Abstract: hp laptop MOTHERBOARD pcb CIRCUIT diagram hp laptop battery pinout temperature controlled fan project using 8051 16 pin diagram of lcd display 16x2 ecg semiconductors master replacement guide diagram circuit usb mp3 player with radio fm lcd hp laptop display LVDS connector pins datasheet cdi ignition hp 4503
Contextual Info: Amplifier and Data Converter Selection Guide 3Q 2007 Delta-Sigma ∆Σ ADCs MicroSystems ADCs SAR ADCs Pipeline ADCs High-Speed Amps Power Amps Buffers Ref Ref Amp ADC Operational Amps Instrumentation Amps Comparators Special Function Analog Processor DAC

Contextual Info: ECP053 ½ Watt, High Linearity InGaP HBT Amplifier • +43 dBm Output IP3 • Single Positive Supply +5V Applications • • • • WLAN / WiBro RFID DMB Fixed Wireless Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB

ECP053G-G

Abstract: 2.4 ghz passive rfid ECP053 ECP053D ECP053D-G ECP053D-PCB2450 ECP053D-PCB2650 ECP053G ECP053G-PCB2450 ECP053G-PCB2650
Contextual Info: ECP053 ½ Watt, High Linearity InGaP HBT Amplifier • +43 dBm Output IP3 • Single Positive Supply +5V • • • • Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure Test Frequency

BF170

Abstract: BF200 transistor bf200 datasheet EL2075CN EL2075 EL2075CS
Contextual Info: T T DUC PRO ACE MEN at E T L r LE P e O E t n S R OB rt Ce c D ED MEN al Suppo il.com/ts M O s C ic r E e n t R h O NData r Te c or www.in ct ouSheet L conta -INTE RS I 1- 888 2GHz GBWP Gain-of-10 Stable Operational Amplifier The EL2075 is a precision voltagefeedback amplifier featuring a 2GHz

ECP053

Abstract: ECP053D ECP053D-G ECP053D-PCB2450 ECP053D-PCB2650 ECP053G ECP053G-G ECP053G-PCB2450 ECP053G-PCB2650
Contextual Info: ECP053 The Communications Edge TM ½ Watt, High Linearity InGaP HBT Amplifier • 13 dB Gain @ 2450 MHz • Single Positive Supply +5V Applications • • • • W-LAN / Wi-Bro RFID DMB Fixed Wireless Operational Bandwidth Test Frequency Gain Input Return Loss

LMC6482 equivalent

Abstract: LMC662 equivalent LMC6032 equivalent LMC6434 LMC660 equivalent TS970 LMC6032 MC33202 TS924 "pin compatible" OP284 TS921
Contextual Info: + Rail to Rail Amplifier Process Technology + ST utilizes BiCMOS fabrication technology for many of its Rail to Rail Operational Amplifiers. BiCMOS technology allows for the integration of traditional bipolar and CMOS technologies within the same integrated circuit. In addition to the BiCMOS amplifiers, ST also offers Rail to Rail families in traditional CMOS.

Contextual Info: EL2075C Features General Description • 2GHz gain-bandwidth product • Gain-of-10 stable • Conventional voltage-feedback topology • Low offset voltage = 20 (iV • Low bias current = 2|xA • Low offset current = 0.1|iA • Output current = 50mA over

85 m 9229

Contextual Info: Broadband Standard Product PA020090-17 Medium Power Amplifier Module Broadband Power 2GHz to 9GHz January 25, 2008 PRELIMINARY www.aeroflex.com/bband DESCRIPTION FEATURES The PA020090-17 is a broadband high reliability amplifier in a compact package and is ideal for use as a stable gain block, IF

Amplifier 10W bluetooth

Abstract: DS1304 RFMD HEMT GaN SiC Gan hemt transistor RFMD ejector RF3930d 3930D SiC diode die
Contextual Info: RF3930D 10W GaN on SiC Power Amplifier Die Package: Die Features • Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain = 19dB at 2GHz  48V Typical Performance  Output Power: 16W at P3dB  Drain Efficiency: 70% at P3dB

amplifier 900mhz

Contextual Info: RF3931 30W GaN Wideband Power Amplifier Package: Hermetic 2-Pin Flanged Ceramic Features • Broadband Operation DC to 3.5GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology  Gain = 15dB at 2GHz  48V Operation Typical Performance at 900MHz

Contextual Info: RF3930D 10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance RF IN VGQ Pin 1 CUT RF OUT VDQ Pin 2 • Output Power: 16W at P3dB

GRM55ER72A475KA01L

Abstract: RF3934 DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS
Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features         Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance

RF3930D

Abstract: RF3930
Contextual Info: RF3930D 10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance RF IN VGQ Pin 1 CUT RF OUT VDQ Pin 2 • Output Power: 16W at P3dB

GaN amplifier

Abstract: Aeroflex GaN power amplifier GaN Amplifier 18GHz PA020180-3922 rf power amplifier with s parameters
Contextual Info: Broadband Standard Product PA020180-3922 GaN High Power Amplifier Module Broadband Power 2GHz to 18GHz 8Watts CW March 11, 2009 Preliminary www.aeroflex.com/bband DESCRIPTION FEATURES Our new industry leading broadband power amplifier designs provide performance without sacrificing output power. The ultra wideband performance

analog rf delay line

Abstract: fiber delay line rf transmitter parameters operational amplifier 2ghz rf analog delay line rf amplifier 10mhz 1550nm analog receiver Finisar CA 94089 Fiber optic delay line CATV optic transmitter circuit
Contextual Info: PRODUCT BRIEF 2GHZ Analog Links Fiber Optic Transmitter OVERVIEW Finisar’s line of high performance fiber optic analog transmitters are designed exclusively for the unique requirements demanded by optical analog signal transport applications. The analog product line builds upon established high performance digital transponders and cable

Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical

bifet amplifier discrete schematic

Abstract: ERJ8GEYJ100V thermocouple gaas
Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features         Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance

Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical

Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical

GaN ADS

Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features „ „ „ „ „ „ „ „ Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance