4.Vout sot-23-5
Abstract: marking code AC sot 23-5 APL5315 APL5315-18 GRM155R60J225M
Text: APL5315 Selectable Adjustable/Fixed Low dropout 300mA Linear Regulator Features General Description • • The APL5315 is a P-channel low dropout linear regulator which needs only one input voltage from 2.8~6V, and de- Wide Operating Voltage: 2.8~6V Low Dropout Voltage:
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APL5315
300mA
APL5315
230mV
300mA
4.Vout sot-23-5
marking code AC sot 23-5
APL5315-18
GRM155R60J225M
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD US94061 Preliminary CMOS IC H I GH SI DE POWER SWI T CH ES ̈ DESCRI PT I ON The UTC US94061 are high-side load switches incorporating a low on-resistance P-channel MOSFET which provides customers over 2A continuous current. The UTC US94061 is characterized by a fast turn on function. The
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US94061
US94061
US94061â
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500V 25A Mosfet
Abstract: 2000 PWM hybrid
Text: TELEDYNE MICROELECTRONICS Power Hybrid, MOSFET, H-Bridge/Quad P/N 2294760 2 16 2947 1 60 S -2 YY ERN 70 WW O MA XX DE XX IN B e U. S.A O . DESCRIPTION FEATURES The 2294760 contains four N-channel Enhancement ❖ Isolated metal hermetic power case mode high voltage power MOSFETs. Each output is
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16-pin
500V 25A Mosfet
2000 PWM hybrid
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD US94060 Preliminary CMOS IC H I GH SI DE POWER SWI T CH ES ̈ DESCRI PT I ON The UTC US94060 are high-side load switches incorporating a low on-resistance P-channel MOSFET which provides customers over 2A continuous current. The UTC US94060 is characterized by a fast turn on function. The
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US94060
US94060
US94060â
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MIC94001
Abstract: No abstract text available
Text: MIC94001 P-Channel MOSFET Not Recommended for New Designs General Description Features The MIC94001 is a silicon gate P-channel MOSFET de signed for low on-resistance, high-side switch applications. • 15V minimum drain-to-source breakdown • 0.4£2 maximum on-resistance at
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MIC94001
MIC94001
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Untitled
Abstract: No abstract text available
Text: MIC94001 P-Channel MOSFET Not Recommended for New Designs General Description Features The MIC94001 is a silicon gate P-channel MOSFET de signed for low on-resistance, high-side switch applications. • 15V minimum drain-to-source breakdown • 0.4Î2 maximum on-resistance at
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MIC94001
MIC94001
300nsec,
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X74HC04
Abstract: MIC94001
Text: MIC94001 P-Channei MOSFET General Description Features The MIC94001 is a silicon gate P-channel MOSFET de signed for low on-resistance, high-side switch applications. • 15V minimum drain-to-source breakdown • 0.4Î2 maximum on-resistance at 4.5V gate-to-source
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MIC94001
MIC94001
250hA
300nsec,
X74HC04
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OD11DIM
Abstract: 3N161
Text: G E SOLI» STATE □1 DE J 3fi75Dfll DDllDm 3875081 G E SOLID STATE 7 g 01E 11014 D 7^ J 7-2*- 3N161 Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch ABSOLUTE MAXIMUM RATINGS FEATURES T a = 25'C unless otherwise noted * Channel Cut Off With Zero Gate Voltage
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OD11DIM
3N161
10jiA
VDS--15V
3N161
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j307
Abstract: lD-10mA IT1700
Text: Gl G E SOLID STATE DE 13fl7SGfil GOllGBT 1 | P-Channel Enhancement Mode MOSFET General Purpose Amplifier IT1700 IT1700 T -s^ -sn FEATURES ABSOLUTE MAXIMUM RATINGS • Low ON-Resistance 0 a = 25°C unless otherwise noted Drain-Source and Gate-Source Voltage . -4 0 V
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J3075001
IT1700
10sec)
375mW
300ms.
j307
lD-10mA
IT1700
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H479
Abstract: 52B zener RFM5P12 RFM5P15 RFP5P12 RFP5P15
Text: G E SOLI» STATE 3875081 G E D I SOLID Standard Power MOSFETs STATE DE I 3075001 DGiaaai : 01E 18221 D T: $3 - r 2/ - RFM5P12, RFM5P15, RFP5P12, RFP5P15 File Number 1463 P-Channel Enhancement-Mode Power Field-Effect Transistors 5 A, 120 V — 150 V
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RFM5P12,
RFM5P15,
RFP5P12,
RFP5P15
RFM5P12
RFM5P15
RFP5P12
RFP5P15
92CS-J646I
92C3-3S4B2
H479
52B zener
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IRF9120
Abstract: IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRF9520 IRFP9121
Text: IRF9120/912110122/9123 « IRFP9120/9121 /9122/9123: IRF9520/9521 /9Ö22/9523 •. P-CHANNEL POWER MOSFETS P r e l i m i n a r y Sn&nifinatinncì Tfi DE 7 clfc>41Lt2 D0054DE 1 | ” uuv/i öUmiviAKY •y*' 3 ^ SAMSUNG SEM ICO ND UC TOR INC -1 0 0 volt, 0.60 Ohm SFET
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IRF9120/912110122/9123
IRFP9120/9121
IRF9520/9521
D0054DE
IRF/IRFP9120,
IRF9520
IRF/IRFP9121,
IRF9521
IRF/IRFP9122,
IRF9522
IRF9120
IRFP9120
IRF9120 mosfet
IRF9121
IRF 9520
IRF 9120
IRF912213
IRF 9122
IRFP9121
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Untitled
Abstract: No abstract text available
Text: ADVANCED POWER TECHNOLOGY blE D • DE S 7‘l D t1 0GGG773 b 7 T « A V P ADVANCED P ow er T e c h n o lo g y 9 POWER MOS IV APT601R3CN 600V APT551R3CN 550V APT601R6CN 600V APT551R6CN 550V 6.5A 6.5A 5.5A 5.5A 1.30Q 1.30Q 1.60Q 1.60Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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0GGG773
APT601R3CN
APT551R3CN
APT601R6CN
APT551R6CN
551R3CN
601R3CN
551R6CN
601R6CN
APT601R3/601R6CN
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IRF250
Abstract: MOSFET IRF250 IRF250 power MOSFET 1RF250 5104 mosfet b16a diode IRF250 MOSFET IRF250 "on semiconductor" IRF251 IRF252
Text: 7964142 Tñ SAMSUNG SEMICONDUCTOR IN C 9 8 D 051 O 4 DE | ? c]t.4145 DDDSIDM 4 I p T “ 3 7- N-CHANNEL POWER MOSFETS IRF250/251/252/253 FEATURES Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance
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IRF250/251/252/253
IRF250
IRF251
IRF252
IRF253
MOSFET IRF250
IRF250 power MOSFET
1RF250
5104 mosfet
b16a diode
IRF250 MOSFET
IRF250 "on semiconductor"
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3N163
Abstract: 3N164 3N170
Text: G E SOLI» STATE DE|3fl7S0fil D Gli DIS 1 | DI 3875081 G E SOLID STATE 01E 11015 3N163, 3N164 3N163, 3N164 P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch FEATURES • • • • T - 3 7 - 3 5 ABSOLUTE MAXIMUMRATINGS Notei (Ta = 25°C unless otherwise noted)
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3N163,
3N164
T-37-35
3N163
-10mA
3N163
3N164
3N170
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TMOS Power FET
Abstract: transistor 2 SC 3114 MTD4P06-1 369A-10 MTD4P06 AN569 MTD4P05 3111 motorola FET MOSFET transistor "" 08/bup 3110 transistor
Text: MOTOROLA SC XSTRS/R F bôF • J> b3b?E54 □D'IÖSÜH 7b? ■HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD4P06 P o w e r Field E ffe c t T ran s is to r P-Channel Enhancement M o de Silico n Gate D P A K for Surface M o un t or Insertion
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BS250P
Abstract: G37 mosfet
Text: PLESSEY SEP1IC0ND/DISCRETE ~T5 DE 17ESDS33 □ □□.55 3 3 S | ~ 7220533 P L ES SE Y S E M I C O N D / D ISCRETE 95D 05533 D T '3 5 'Z S ' P-channel enhancement mode vertical DMOS FET BS250P FEATURES • Com pact geometry • Fast sw itching speeds • No secondary breakdown
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17ESDS33
BS250P
0QDSS37
5/ZVP1206/G6/66
0DUS540
BS250P
G37 mosfet
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g28 SOT23
Abstract: LE SOT23-4 BS250F s33 sot23
Text: “ÌS P LE S S EY SEtlICOND/DISCRETE 7220533 PLESSEY DE 1• 7 2 2 0 5 3 3 0005525 3 SEMICOND/ D I S C R E T E 95D 05525 T '3 S '- 2 5 BS250F P-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown
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BS250F
BS250F
7E2DS33
0DS531
g28 SOT23
LE SOT23-4
s33 sot23
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P-Channel Depletion Mode FET
Abstract: P-Channel Depletion Mosfets 2N4391 MOTOROLA MPF970 "P-Channel JFETs" JFETs Junction FETs MPF4091 2N4091 2N4856 MPF971
Text: Motorola offers a line of field-effect transistors that encom passes the latest technology and covers the full range of FET applications. Included here is a wide variety of junction FETs, MOSFETs with P- or N-channel polarity with both single and dual gates and TMOS FETs. These FETs include devices de
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MPF971
N3993
N3994
2N4859A
2N4856A
2N4856
N4859
2N4391
MPF4391
2N4091
P-Channel Depletion Mode FET
P-Channel Depletion Mosfets
2N4391 MOTOROLA
MPF970
"P-Channel JFETs"
JFETs Junction FETs
MPF4091
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TA9401
Abstract: TA940 RFL1P08 RFL1P10 RFP2P08 RFP2P10
Text: SOLI» STATE 3875Ö81 DE§3Ö7S0Ö1 01 G E SÒL I D STATE Standard Power MOSFETs Q01ÛE17 1 | 0 1E 1 8 2 1 7 _ RFL1P08, RFL1P10, RFP2P08, RFP2P10 File N um ber 1535 Power MOS Field-Effect Transistors TERM INAL DIAGRAM P-Channel Enhancement-Mode Power Field-Effect Transistors
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RFL1P08,
RFL1P10,
RFP2P08,
RFP2P10
RFL1P08
RFL1P10
RFP2P08
RFP2P10
PMP411A.
92CS-37569
TA9401
TA940
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1RF9540
Abstract: l 9143 irf 409 IRF 9540 L 9141 IRF95XX IRF high current p-channel IRF9140 IRF9140 TO 220 IRF9540
Text: 7964142 SAMSUNG S E M I C O N D U C T O R INC Hfl DE 1 7 ^ 4 1 4 5 IRF9140/9141/9142/9143 IRFP9140/9141 /9142/9143 “ IRF9540/9541Z9542/9543_ ^ " D0GS40Ö t- P-CHANNEL POWER MOSFETS Preliminary Specifications - 1 0 0 Volt, 0.2 Ohm SFET PRODUCT SUMMARY
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D0GS40Ö
IRF9140/
IRFP9140/9141
IRF9540/
9541Z
IRF/IRFP9140,
IRF9540
IRF/IRFP9141,
IRF9541
IRF/IRFP9142,
1RF9540
l 9143
irf 409
IRF 9540
L 9141
IRF95XX
IRF high current p-channel
IRF9140
IRF9140 TO 220
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Untitled
Abstract: No abstract text available
Text: BSP 315 SIPMOS N Channel MOSFET • SIPMOS - enhancem ent m ode • D rain-source v olta ge Vbs = -50V • C ontin uou s drain current / D = -1.0A • D rain-source on-resistance • Total pow er dissipation fiosioio = .9 5 0 P,M = 1.5W Type M arking Ordering co de for
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Q67000-S027
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Untitled
Abstract: No abstract text available
Text: y UNITRO DE Ul - UC1707 UC2707 UC3707 Dual Channel Power Driver FEATURES Tw o independent Drivers 1 .5A Totem Pole Outputs Inverting and N on-Inverting Inputs 40n s Rise and Fall into 1 0OOpF H ig h-S p eed , P ow er M O S F E T C om patible Low C ross-Conduction C urrent Spike
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UC1707
UC2707
UC3707
UC3611
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RFM10P12
Abstract: RFM10P15 RFP10P12 RFP10P15 rca MIL ID TA9404 rca solid state Linear I8233
Text: "Öl G E SOLID STATE DE . 3 8 7 5 0 8 1 G E SO LID STATE Standard Power MOSFETs_ I 3Û750S1 01E Ì 8233 RFM10P12, RFM10P15, RFP10P12, RFP10P15 0010233 0 |~~ D T - 3 ^ -2 / F ile N u m b e r 1595 T E R M IN A L DIA G RAM P-Channel Enhancement-Mode
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RFM10P12,
RFM10P15,
RFP10P12,
RFP10P15
-120V
and-150
RFM10P12
RFM10P15
RFP10P12
RFP10P15*
RFP10P15
rca MIL ID
TA9404
rca solid state Linear
I8233
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y 6763
Abstract: No abstract text available
Text: TE UNITRODE CORP 9347963 D E | c1347c]b3 DDIOSOÛ 3 | ~ U NI TRO DE CORP 92D 10508 D POWER MOSFET TRANSISTORS , 1TX JTXV 100 Volt, 0.055 Ohm N-Channel FEATURES • Fast Sw itching • Low Drive C urrent • Ease of Paralleling • No Second Breakdow n • Excellent T e m p e ra tu re S tability
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1347c
2N6764
DD1GS11
y 6763
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