P CHANNEL JUNCTION FET Search Results

Contextual Info: SELECTION GUIDE Page N-channel junction field-effect transistors 8 N-channel junction field-effect transistors for switching 10 P-channel junction field-effect transistors for switching 12 N-channel single-gate MOS-FETs for switching 12 N-channel dual-gate MOS-FETs

2N5460

Contextual Info: Philips Semiconductors Preliminary specification P-channel junction FETs 2N5460; 2N5461; 2N5462 DESCRIPTION P-channel silicon junction FET in a TO-92 plastic envelope. Intended for use as an analog switch and an amplifier. PINNING - TO-92 PIN DESCRIPTION 1

2SJ145

Contextual Info: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ145 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ145 is a small type resin sealed P channel junction type FET. It OUTLINE DRAWING 2.1 ±0.2 is especially designed for low frequency voltage amplify, analog switch

2SJ40

Abstract: SK381 2SK381
Contextual Info: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ40 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ40 is a small type resin sealed P channel junction type FET. It is OUTLINE DRAWING 4.3MAX especially designed to r low frequency voltage am plify, analog switch

2SJ125

Abstract: marking XI
Contextual Info: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ125 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ125 is a small type resin sealed P channel junction type FET. It OUTLINE DRAWING o - +0.5 2-5 0.3 is especially designed for low frequency voltage amplify, analog switch

bf862

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BF862 N-channel junction FET Objective specification Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Objective specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition fre q u e n cy fo r excellent se n sitivity in

NEC Ga FET marking L

Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
Contextual Info: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm

Junction-FET

Abstract: 2SJ164 2SK1104 SC-72
Contextual Info: Silicon Junction FETs Small Signal 2SJ164 Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS

2SJ0163

Abstract: 2SJ163 2SK1103
Contextual Info: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-channel junction FET Unit: mm For switching circuits Complementary to 2SK1103 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C 2.90+0.20 –0.05

2SK1104

Abstract: 2SJ0164 2SJ164 SC-72
Contextual Info: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET Unit: mm For switching circuits Complementary to 2SK1103 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1

Contextual Info: bb53T31 DQ240CH 70S « A P X N AMER PHILIPS/DISCRETE J174 TO 177 b?E D J V P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application with analog switches, choppers, commutators etc.

2N3820

Contextual Info: Philips Components D ata sheet status Preliminary specification date of issue October 1990 DESCRIPTION Silicon p-channel junction field-e ffect transistor in a plastic TO-92 envelope. It is intended fo r use in general purpose am plifiers. 2N3820 P-channel J-FET

"P-Channel JFET"

Abstract: 2N3820 P-Channel JFET 2n3820 transistor Junction P FET E 212 fet 2N3820 ti
Contextual Info: Philips Components 2N3820 Data sheet status Preliminary specification date of issue October 1990 P-channel J-FET PINNING • TO-92 DESCRIPTION Silicon p-channel junction field-effect transistor in a plastic TO-92 envelope. It ¡s intended for use in general purpose amplifiers.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Features ■ Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2

Contextual Info: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation

Junction-FET

Abstract: 2SJ0163 2SJ163 2SK1103
Contextual Info: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 3 V Drain current ID −20 mA Gate current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2 • Pin Name

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits Complementary to 2SK1104 (0.8) 0.75 max. • Features

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2 • Pin Name

VDSV

Abstract: 2SJ163 2SK1103 mini 29
Contextual Info: Silicon Junction FETs Small Signal 2SJ163 Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS 65 V Drain current ID −20

2SJ0364

Abstract: 2SJ364
Contextual Info: Silicon Junction FETs Small Signal 2SJ0364 (2SJ364) Silicon P-Channel Junction FET For analog switch (0.425) unit: mm 0.3+0.1 –0.0 • Features ● Low ON-resistance ● Low-noise characteristics 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5° 1.25±0.10

2SK1104

Abstract: 2SJ0164 2SJ164
Contextual Info: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-channel junction FET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits Complementary to 2SK1104 (0.8) 0.75 max. • Features 15.6±0.5 • Low ON resistance • Low-noise characteristics

Contextual Info: J174 TO 177 _/ V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.