P-CHANNEL FET 100V Search Results

ZVP2120A

Abstract: to92 fet p channel DSA003787
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS

ZVP2120A

Abstract: P-Channel FET 100v to92
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS

ZVP2110A

Abstract: P-Channel FET 100v to92 to92 fet p channel DSA003787
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110C P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω G REFER TO ZVP2110A FOR GRAPHS

MIL-STD-806

Abstract: tc5000 TC40H000 rca thyristor manual TC4069 OSCILLATOR tc-74ic mc14500b mc14500 shockley diode application IC - TC4001BP
Contextual Info: OUTLINE 1. C2HOS IC Family 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi­ conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted

TC4069 OSCILLATOR

Abstract: TC40HXXX tc4011bp applications MC14500B Industrial Control Unit cmos integrated circuits TC4069 equivalent
Contextual Info: OUTLINE 1. C 2M0S I C F a mi ly 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi­ conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted

2SK1036

Contextual Info: P o w e r F-MOS FET 2SK10 3 6 2S K 1036 Silicon N-channel Power F-M OS FET P ackage Dimensions • F eatures • Low ON resistance RCs on : RDs (on) = 0.211 (typ.) • High switching rate : tf = 80ns (typ.) • No secondary breakdown Unit: mm Di uvJ i o

2SK1267

Abstract: SC-65 D 1169 25
Contextual Info: P ow er F-MOS FET 2SK1267 2SK1267 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resista n ce R » o n : R t>; (on) 1 - 0 .0 7 il (typ.) Unt: mm • High sw itching ra te : ti = 180n s (ty p .) • No secondary breakdown • High breakdown voltage

2SK1118

Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531

Contextual Info: 2SK1817-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ T¥T - F - lll • Features r p n i r o E R o I E b Outline Drawings • High current • Low no-resistance • No secondary b reakd ow n

Contextual Info: Supertex inc. TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices

2sk mosfet

Abstract: C 5388 controler 2SK906 SC-65 T151 2sk 100a
Contextual Info: 2SK906 FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power ■A p plicatio ns • DC-DC converters • M otor controlers • General purpose pow er amplifier

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123A ISSUE 4 -A PR IL 1998_ FEATURES * BVdss = 100V * Low Threshold PARTMARKING D ETAIL - SAA ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V p s Drain-Gate Voltage

2SK1264

Abstract: 2SK12 H150
Contextual Info: P o w e r F-MOS FET 2SK12Ó4 2SK1264 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R ds on : R DS (on) l = 0 . 7 i i (ty p .) Unit: mm • High sw itch in g ra te : tf = 3 6 n s (ty p .) • No seco n d a ry breakdow n

l33 tf

Abstract: 2SK760 td 1410 SC-65 G028
Contextual Info: P ow er F-MOS FET 2SK760 2SK760 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON re s is ta n c e R Ds on : R ns (on) = 0 .2 2 i l (ty p .) • H igh sw itch in g r a te : t f= 120ns (ty p .) • N o se c o n d a ry b reak d o w n

ciss 200v

Abstract: IRFE310
Contextual Info: Search Results Part number search for devices beginning "IRF9140" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) IRF9140 P-Channel TO3 100V 18A 125W

2SK1036

Contextual Info: Power F-MOS FET 2SK1036 2SK1036 Silicon N-channel Power F-MOS FET Package Dimensions •Features • Low ON r e s is ta n c e R ds on : R ds (on) = 0 . 2 f t (ty p .) Unit: mm • High sw itch in g ra te : ti = 8 0 n s (ty p .) 5 7m ax. • No seco n d a ry breakdow n

2SK804

Contextual Info: P o w e r F-MOS FET 2SK804 2SK804 Silicon N-channel Power F-MOS FET P a c k a g e D im e n s io n s • F e a tu re s • Low ON re sistan c e RDs on : RDs (on) = 0.08A (typ.) • High switching ra te : tf= 150ns (typ.) • No secondary breakdow n • High breakdow n voltage

td 1410

Abstract: 2SK761
Contextual Info: Power F-MOS FET 2SK761 2SK761 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON r e s is ta n c e R Db on : R ds (on) = 0 . 1 5 f i (ty p .) Unit: mm 5.2max. 15 5max. • High sw itch in g ra te : tf = 1 2 0 n s (ty p .) • No seco n d a ry breakdow n

1C00

Abstract: 2SK805
Contextual Info: P o w er F-MOS FET 2SK 805 2SK805 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low O N r e s is ta n c e R Ds on : R Ds (on) = 0 .1 2 il (ty p .) • H igh sw itch in g r a te : t f = 120ns (ty p .) • N o se c o n d a ry b reak d o w n

controler

Abstract: 2SK906 SC-65 T151
Contextual Info: 2SK906 FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings • Features • High current • Low on-resistan ce • No secondary b rea kd o w n • Low driving p o w er ■A pplications • D C -D C converters • M o to r co n tro lers

2SK755

Abstract: TCI-220 251C
Contextual Info: Power F-MOS FET 2SK755 2SK755 Silicon N-channel Power F-MOS FET • Package Dim ensions ■ Features • L ow ON r e s is ta n c e R DS : R ds, on = 0 . 3 3 0 (ty p .) Unit: mm • High sw itch in g r a te : tf = 4 5 n s (ty p .) • N o seco n d a ry breakdow n

Contextual Info: MAE J> m SO LIT RO N DEVICES INC ics r a m i rs\n iirr-ir fl3bflb02 OGDBSflM SG3 « S O P Q A T Ä L O Q _ P-CHANNEL ENHANCEMENT MOS FET -100V.-12A. o.3n JAA JAB SDF9130 SDF9130 FEATURES • RUGGED PACKAGE HI-REL CONSTRUCTION • CERAMIC EYELETS

2sk12a

Abstract: D 1163 2SK12 2SK1264
Contextual Info: P o w er F-MOS FET 2SK12Ó4 2S K 1264 Silicon N-channel Power F-M O S FET P ackage Dimensions • Features • L ow ON r e s is ta n c e R ds on : RDS (on) l = 0 .7 1 i (ty p .) Unit: mm • H igh sw itch in g r a te : t f = 3 6 n s (ty p .) • No se c o n d a ry b reak d o w n

diode DS10

Contextual Info: Panasonic Power Transistor Arrays F-MOS FETs PUB4701 Silicon N-Channel Power F-MOS FET • Features 0 Avalanche energy capacity guaranteed • High-speed switching • Low ON-resistance 0 No secondary breakdown 0 Low-voltage drive ■ A p p lic a tio n s