PED RELAY 11 Search Results

9RV3

Contextual Info: DS-VA-GT1000-eng August , 2014 Data Sheet Glass Tube Flowmeter Model GT1000 Model GT1020 Model GT1024 Variable Area Industrial Glass Tube, Variable Area Flowmeters Description The Brooks GT 1000 combines ruggedness and simplicity in design to provide a versatile

RXIL 2

Abstract: asea time-lag relay RI asea relay RI ASEA RI panel and cubicles catalogue capacitor trip unit DIODE RK 69 RK-71 RXZ41 RK714
Contextual Info: ASEA Capacitor unit type RXTCD 4 Used, fo r example, for tripp in g of circuit-breakers, during interruption of the auxiliary power supply Built-in circuits for controlling the charge of the capacitor Service life of capacitor, 10 years Catalogue RK 71-11 E

1RFD110

Abstract: FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111
Contextual Info: 3 H A R R IS IRFD110/111/112/113 IRFD110R/111R/112R/113R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4 -P IN D IP • 1A and 0.8A, 80V - 100V TOP VIEW • rDS on) = 0 .6 ÎÎ and 0 .8 fi • Single Pulse Avalanche Energy Rated*

Contextual Info: • 4302271 0053742 ÜJ HARRIS 4Tb ■ August 1991 HAS 2N 6769 2 N 6770 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors Package Features T O -2 0 4 A A • 11A and 12A, 450V - 500V BOTTOM VIEW • rQ3 |on = 0.5H and 0.40 • SOA is Power-Dissipation Limited

automatic phase selector circuit diagram

Abstract: RAAAK RAZOG PS 307 5A ASEA ABG 10 SELECTOR SWITCH ASEA ABG PS 307 10A asea razog
Contextual Info: ASEA Catalogue RK 85-16 E Edition 1 April 1978 File R. Part 1 Reclosing relay type R a AAK For line*! vjith distance protection Single eiiot siigle-phase or three-phase reclosing ¡mended for y ss together with dis­ tance reiay svpg RAZO G but can be adapted to other distance relays

1RFF113

Abstract: FF113R IRFF111R 1RFF110
Contextual Info: 3 H A R R I S IRFF110/ 111/112/113 IRFF110R/111R/112R/113R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-205AF • 3.0A and 3.5A, 80V - 100V BOTTOM VIEW • rDS(on = O-ßf1 and 0 .8 ft • Single Pulse Avalanche Energy Rated*

IRF232

Abstract: IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF233 varo diode diode oa 90
Contextual Info: Standard Power MOSFETs- IRF220, IRF221, IRF222, IRF223 I q . O BAIN CU RR EN T AMPERES Tc . CASE TEM PERATU RE <°C) F ig. 112 — T y p ic a l O n-R esistance V s. D ra in C u rre n t 20 40 Fig. 13 — M a x im u m D ra in C u rre n t V s. Case T e m p e ra tu re

PED relay

Abstract: anzac mixer anzac MD MD-425
Contextual Info: X MODEL DOUBLE BALANCED MIXER MD-425 RF, LO 5-2000 MHz IF 10-600 MHz LO Power +7 dBm Relay Header MCL Model SRA-11 Replacement Guaranteed Specifications* From -55°C to +85°C F requ ency Range RF, LO Ports IF Port C o nversion Loss 5 - 1000 MHz 1000 - 2000 MHz

IRF9640

Abstract: transistor IRF9640 IRF9641 IRF9642 irf9640 mosfet IRF9643 f9640
Contextual Info: Rugged Power MOSFETs File Number IRF9640, IRF9641 IRF9642, IRF9643 2284 Avalanche-Energy-Rated P-Channel Power MOSFETs -9 A and -11 A, -150 V and -200 rosiom = 0.5 Q and 0.7 fi Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ite d

IRF9241

Abstract: irf9243 IRF9240 mosfet IRF9240 IRF9242
Contextual Info: Rugged Power MOSFETs IRF9240, IRF9241 IRF9242, IRF9243 File Number 2279 Avalanche-Energy-Rated P-Channel Power MOSFETs TERMINAL DIAGRAM -9 A and -11 A, -150 V and -200 V ros on = 0.5 n and 0.7 O Features: • Single pulse avalanche energy rated ■ SOA is pow er-dissipation lim ite d

irf9241

Contextual Info: H a r r i IRF9240, IRF9241, IRF9242,1RF9243 s s e m i c o n d u c t o r -9A and -11 A, -150V and -200V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -9A a n d -11 A,-150V and-200V • High Input Impedance These are P-Channel enhancement mode silicon gate

PED relay cross reference

Abstract: LR40787 schrack zt570524 relay Schrack ZT570524 Magnecraft w67 700-HC14Z24 Schrack ZT Allen Bradley 11-pin relay pin out diagram schrack relay cross reference pt570615 finder 15.21
Contextual Info: Your Contact for Industrial Relays SECTION SOCKET COMPATIBLE AND FLANGE MOUNTED RELAYS 1 TO 30 AMPERES 1 SOCKET COMPATIBLE & FLANGE MOUNT RELAYS 782H 781 CERTIFIED CLASS 1 DIVISION 2 FOR HAZARDOUS LOCATIONS 782XBX/XDX RELAY SERIES ISO 9002 QS 9000 L W H 1.521 x 0.551 x 1.082

MT3809G

Abstract: DEK13
Contextual Info: Installation and Operation Manual X-VA-MT3809G-MT3810G-eng Part Number: 541B182AAG December, 2014 Models MT3809G & MT3810G Brooks Models MT3809G and MT3810G Metal Tube Variable Area Flowmeters Model MT3809G General Purpose Housing Model MT3809G Model MT3809G

IRF9643

Abstract: IRF9642 IRF9641
Contextual Info: HARRIS IRF9640, IRF9641 IRF9642, IRF9643 Avalanche Energy Rated P-Channel Power MOSFETs August 1991 Package Features T 0 -2 2 0 A B • -9 A and -11 A, -1 5 0 V and -200V TOP VIEW • rDS ON = 0 .5 Cl and 0 .7 ft • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited

f9240

Abstract: irf9240r irf 44 n rf924
Contextual Info: HARRIS IR F 9 2 40 , IR F9241 IRF9242, IRF9243 Avalanche Energy Rated P-Channel Power MOSFETs A ugust 1991 Features Package T O -2Û 4A A BOTTOM VIEW • -9A and -11A , -15 0 V and -200V • rDS ON = 0 .5 0 0 and 0 .7 ÎÎ • Single Pulse Avalanche Energy Rated

Contextual Info: Hormis S RFP50N05, RFG50N05 Semiconductor 7 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 50A,50V These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI integrated circuits, gives

Contextual Info: IRFPG40 Semiconductor D ata S h eet Ju ly 1999 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET F ile N u m b er 2879.2 Features • 4.3A, 1000V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

F1S40N10

Abstract: 40N10 TA9846 rfp40n10
Contextual Info: HARRIS S E M I C O N D U C T O R RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 40A,100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea­

F1S40N10

Abstract: RFP40N10
Contextual Info: H A R R IS sem iconductor R F G 4 0 N 10, R F P 4 0 N 10, R F 1S 4 0 N 10, R F 1S 4 0 N 10S M 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 40A,100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea­

PED relay

Abstract: VOLTAGE LEVEL RELAY SM 125 230 SJ 155 Diode SJ sj 45 Transistor SJ relay 12 volt 6a 100MA RELAY PE Relay SJ 02
Contextual Info: Current and Voltage Controls 1-Phase AC/DC Current Control Types SJ 105, SJ 155 • Current control relay with absolute scale and internal shunt • Measuring ranges: SJ 105: 0.2 - 5 ADC SJ 155: 0.2 - 5 AAC • Knob-adjustable current level • Latching at set level possible

K3G250-AY11-C2

Abstract: K3G310-BB49-02 engel
Contextual Info: EC centrifugal fans – RadiPac version 2014-06 RadiPac: Now even more efficient The line of radial plug fans with GreenTech EC motor technology already All RadiPacs listed in the catalogue exceed the tougher new minimum established in the market has been expanded further. Our new product

Contextual Info: i H s A e - R c o R - u IR FF 110, IRFF111, IRFF112, IRFF113 i s c t c 3.0A and 3.5A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRF9640

Contextual Info: H AFRFRIS S E M I C O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11 A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A a n d -11 A,-150V and-200V These are P-Channel enhancem ent mode silicon-gate

PED relay

Contextual Info: Current and Voltage Controls 1-Phase AC/DC Current Control Types SJ 105, SJ 155 • Current control relay with absolute scale and internal shunt • Measuring ranges: SJ 105: 0.2 - 5 ADC SJ 155: 0.2 - 5 AAC • Knob-adjustable current level • Latching at set level possible