PED RELAY 11 Search Results

9RV3

Contextual Info: DS-VA-GT1000-eng August , 2014 Data Sheet Glass Tube Flowmeter Model GT1000 Model GT1020 Model GT1024 Variable Area Industrial Glass Tube, Variable Area Flowmeters Description The Brooks GT 1000 combines ruggedness and simplicity in design to provide a versatile

IRF232

Abstract: IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF233 varo diode diode oa 90
Contextual Info: Standard Power MOSFETs- IRF220, IRF221, IRF222, IRF223 I q . O BAIN CU RR EN T AMPERES Tc . CASE TEM PERATU RE <°C) F ig. 112 — T y p ic a l O n-R esistance V s. D ra in C u rre n t 20 40 Fig. 13 — M a x im u m D ra in C u rre n t V s. Case T e m p e ra tu re

PED relay

Abstract: anzac mixer anzac MD MD-425
Contextual Info: X MODEL DOUBLE BALANCED MIXER MD-425 RF, LO 5-2000 MHz IF 10-600 MHz LO Power +7 dBm Relay Header MCL Model SRA-11 Replacement Guaranteed Specifications* From -55°C to +85°C F requ ency Range RF, LO Ports IF Port C o nversion Loss 5 - 1000 MHz 1000 - 2000 MHz

IRF9640

Abstract: transistor IRF9640 IRF9641 IRF9642 irf9640 mosfet IRF9643 f9640
Contextual Info: Rugged Power MOSFETs File Number IRF9640, IRF9641 IRF9642, IRF9643 2284 Avalanche-Energy-Rated P-Channel Power MOSFETs -9 A and -11 A, -150 V and -200 rosiom = 0.5 Q and 0.7 fi Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ite d

IRF9241

Abstract: irf9243 IRF9240 mosfet IRF9240 IRF9242
Contextual Info: Rugged Power MOSFETs IRF9240, IRF9241 IRF9242, IRF9243 File Number 2279 Avalanche-Energy-Rated P-Channel Power MOSFETs TERMINAL DIAGRAM -9 A and -11 A, -150 V and -200 V ros on = 0.5 n and 0.7 O Features: • Single pulse avalanche energy rated ■ SOA is pow er-dissipation lim ite d

PED relay cross reference

Abstract: LR40787 schrack zt570524 relay Schrack ZT570524 Magnecraft w67 700-HC14Z24 Schrack ZT Allen Bradley 11-pin relay pin out diagram schrack relay cross reference pt570615 finder 15.21
Contextual Info: Your Contact for Industrial Relays SECTION SOCKET COMPATIBLE AND FLANGE MOUNTED RELAYS 1 TO 30 AMPERES 1 SOCKET COMPATIBLE & FLANGE MOUNT RELAYS 782H 781 CERTIFIED CLASS 1 DIVISION 2 FOR HAZARDOUS LOCATIONS 782XBX/XDX RELAY SERIES ISO 9002 QS 9000 L W H 1.521 x 0.551 x 1.082

MT3809G

Abstract: DEK13
Contextual Info: Installation and Operation Manual X-VA-MT3809G-MT3810G-eng Part Number: 541B182AAG December, 2014 Models MT3809G & MT3810G Brooks Models MT3809G and MT3810G Metal Tube Variable Area Flowmeters Model MT3809G General Purpose Housing Model MT3809G Model MT3809G

IRF9640

Abstract: IRF1S9640 IIRF9640 IRF9643 IRF9642 IRF9641
Contextual Info: HARRIS S E M IC O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11 A, -150V and -200V These are P-Channel enhancement mode silicon-gate

Contextual Info: IRFPG40 Semiconductor D ata S h eet Ju ly 1999 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET F ile N u m b er 2879.2 Features • 4.3A, 1000V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

PED relay

Abstract: VOLTAGE LEVEL RELAY SM 125 230 SJ 155 Diode SJ sj 45 Transistor SJ relay 12 volt 6a 100MA RELAY PE Relay SJ 02
Contextual Info: Current and Voltage Controls 1-Phase AC/DC Current Control Types SJ 105, SJ 155 • Current control relay with absolute scale and internal shunt • Measuring ranges: SJ 105: 0.2 - 5 ADC SJ 155: 0.2 - 5 AAC • Knob-adjustable current level • Latching at set level possible

K3G250-AY11-C2

Abstract: K3G310-BB49-02 engel
Contextual Info: EC centrifugal fans – RadiPac version 2014-06 RadiPac: Now even more efficient The line of radial plug fans with GreenTech EC motor technology already All RadiPacs listed in the catalogue exceed the tougher new minimum established in the market has been expanded further. Our new product

Contextual Info: Fans and drive concepts for rail technology version 2014-10 ebm-papst: Your highly competent partner in rail engineering Creating the ideal fan solution. Our advantage lies in the perfect interaction. The area of railways places particular requirements on a product. Fans developed uniquely for rail technology and for the specific field of application

Contextual Info: RFP4N100, RF1S4N100SM D ata S h eet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancem ent mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor

RFP14N05

Abstract: RFD14N05 RFD14N05SM rca MIL ID
Contextual Info: Power MegaFETs - RFD14N05, RFD14N05SM, RFP14N05 File Number 2 268 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs TERMINAL DIAGRAM 14 A, 50 V Tds(on) “ o.m Features: • Single pulse avalanche energy rated

RFD16N05

Abstract: RFD16N05SM
Contextual Info: Power MegaFETs - RFD16N05, RFD16N05SM File Number 2267 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs 16 A , 5 0 V rdsion) = 0 .0 4 7 O TERMINAL DIAGRAM Features: • Single pulse avalanche energy rated m SOA is power-dissipation limited

Contextual Info: 7^2^537 Q045752 4^0 • S C T H SGS-THOMSON m IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI V dss R d S o ii Id 50 V 50 V < 0.028 n < 0.028 £i 50 A 27 A TYPICAL R DS(on) = 0.022 Q AVALAN C H E RUGGED TECHNOLO GY

Contextual Info: IRFR410, IRFU410 S e m iconductor D ata S h eet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

IRF9150

Abstract: IRF9151 IRF150 SCVIRFP9150CF1 MOSFET IRF150
Contextual Info: Rugged Power MOSFETs File Num ber IRF9150, IRF9151 2280 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power Field-Effect Transistors 25 A, 60 V and 100 V P-CHANNEL ENHANCEMENT MODE fDS on = 0 .1 5 0 Q Features: • SOA is pow er-dissipation lim ite d

MOSFET IRF 570

Abstract: IRFBC40R MOSFET IRF 940 6.2a 600v irf IRFBC42R IRF N-Channel Power MOSFETs irf mosfets gj6b 360VX
Contextual Info: . Rugged Power MOSFETs File N u m be r IRFBC40R, IRFBC42R 2157 Avalanche-Energy-Rated N-Channel Power MOSFETs 6 .2A and 5.4A, 600V rbston ~ 1-20 and 1.60 N-CHANNEL ENHANCEMENT MODE Features: • Repetitive Avalanche Ratings m Simple Drive Requirements • Ease o l Paralleling

IRFF130R

Abstract: IRFF131R IRFF132R IRFF133R
Contextual Info: Rugged Power MOSFETs File Number 2024 IRFF130R, IRFF131R, IRFF132R, IRFF133R Avalanche Energy Rated N-Channel Power MOSFETs 7 ,0A and 8.0A, 60V-100V rDs on = 0 .1 8 0 a nd 0.25Q N-CHANNEL ENHANCEMENT MODE D Features: • Single pulse avalanche energy rated

IF-D92

Abstract: IRFD9220 IRFD9223 VOS-10
Contextual Info: Rugged Power M IRFD9220 IRFD9223 M File Number 0 ~ aR 2286 Avalanche-Energy-Rated P-Channel Power MOSFETs -0.45 A and -0.6 A, -150 V and -200 V rDsion = 1.5 0 and 2.4 Q TERMINAL DIAGRAM

IRFP55

Abstract: IRFP256 IRFP255 IRFP551 IRFP254 IRFP257 TG-247 mosfet irfp 250 N
Contextual Info: Rugged Power MOSFETs File Num ber 2289 IRFP254, IRFP255 IRFP256, IRFP257 Avalanche-Energy-Rated N-Channel Power MOSFETs 22 A and 20 A, 275 V and 250 V rDston = 0.14 O and 0.17 Cl N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

IF9120

Contextual Info: IRFR9120, IRFU9120 H A R R IS X Semiconductor 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs September 1998 Description Features 5.6 A, 100 V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava­

backward-curved

Abstract: Centrifugal fans backward curved M2D 068-BF
Contextual Info: version 2013-05 EC/AC centrifugal fans – RadiCal The engineer’s choice EC/AC centrifugal fans – RadiCal Impellers made of high-tech compound material with optimised flow con- This opens up entirely new possibilities for applications in ventilation and