PG107 Search Results

Contextual Info: ABRUPT TUNING VARACTORS SUPER Q S ER IES PG107 - PG347 PC 107 - PC 141 Th e PG and PC series voltage variable capacitance diodes feature planar relia­ b ility, high Q , high voltage types with controlled tuning ratios for electronic tuning and harm onic generator applications. They are packaged in J E D E C

Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT //PG107B S-BAND SPDT SWITCH DESCRIPTION The /¿PG107B is a S-Band SPDT Single Pole Double Throw switch which was developed for radar application. The device can operate from DC to 3.4 GHz. It is housed in a 8 pin ceram ic flat package that is easy to install and

PC114

Abstract: PC112 DO-14 pc-115 pc137
Contextual Info: ABRUPT TUNING VARACTORS SUPER Q SERIES PG107 - PG347 PC 107 PC 141 The PG and PC series voltage variable capacitance diodes feature planar relia­ b ility , high Q, high voltage types w ith controlled tuning ratios fo r electronic tuning and harmonic generator applications. They are packaged in JEOEC

PG107

Abstract: PG110 PG115 PG122 PG207 PG210 PG215 PG307 PG310 PG315
Contextual Info: 5238534 KNOX S E M I C O N D U C T O R INC Tr , J 99D 00139 DE | S 2 3 f l S 3 4 Varactor Dtodes • D D D 0 D 1 3 C1 3 T " * 0 7 “/ ? ■ ULTRA Hi-Q Type Number 1 MHz pF PG107 PG207 PG307 PG110 PG210 PG310 PG115 PG215 PG315 PG122 PG222 PG322 PG133 PG233

Contextual Info: RflSG electronics Q IID C D fl au rcn u tn c ABRUPT TUNING SERIES PG107 - PG347 varactors The PG and PC series voltage variable capacitance diodes feature planar relia­ b ility , high Q, high voltage types w ith controlled tuning ratios fo r electronic tuning and harm onic generator applications. They are packaged in JED EC

UPG107B

Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT //PG107B S-BAND SPDT SWITCH DESCRIPTION The //PG107B is a S-Band SPDT Single Pole Double Throw switch which was developed for radar application. The device can operate from DC to 3.4 GHz. It is housed in a 8 pin ceram ic flat package that is easy to install and

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2159T6R L, S-BAND SPDT SWITCH DESCRIPTION The μPG2159T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band applications. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from

PG2020

Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Contextual Info: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6

v2308

Abstract: EP1014 V2205
Contextual Info: TABLE OF CONTENTS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance SLIGHT HYPERABRUPT AB R U PT Page No. 1 N 9 5 1 - 1 N 9 5 6 . 1N4786 -1 N 4 8 1 5 A , B .

12-PIN

Abstract: HS350
Contextual Info: GaAs INTEGRATED CIRCUIT PG2413T6M SP3T SWITCH FOR BluetoothTM AND 802.11b/g DESCRIPTION The μPG2413T6M is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This device can operate frequencies from 0.5 to 3.0 GHz, with low insertion loss.

NE3517S03

Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS

NE3515S02

Abstract: transistor "micro-x" "marking" 3 NE3515S02-T1C-A ne3515 NE3515S02-T1D-A duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA

T6s MARKING

Contextual Info: GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR BluetoothTM CLASS 1 DESCRIPTION The PG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a power amplifier with low-pass filter. And this device has no RF matching parts.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2409TB HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μPG2409TB is a GaAs MMIC high power SPDT Single Pole Double Throw switch which were designed for WiMAX. This device can operate frequency from 0.5 to 3.8 GHz, having the low insertion loss and high isolation.

SN0608098-GP

Abstract: BQ24745RHDR-GP lcd 15.4 inverter EPSON C691 MAIN AMD RS780 tps51125 MEC5035 foxconn TPS51117PWR-GP BCM5761
Contextual Info: 5 4 3 2 1 FOOSE UMA Schematics Document AMD 15.4" D D AMD Giffin CPU S1G2 AMD RS780 +SB700 C C 2008-01-04 REV : SB B B DY : Nopop Component 5761 : Use BCM5761E 5756 : Use BCM5756M B_TPM : Use LOM TPM C_TPM : Use China TPM <Variant Name> A A Wistron Corporation

Contextual Info: GaAs INTEGRATED CIRCUIT PG2405T6Q 1 W SP3T SWITCH DESCRIPTION TM The PG2405T6Q is an SP3T GaAs FET switch which was developed for Bluetooth , wireless LAN and NFC. <R> This device can operate frequency from 10 MHz to 2.5 GHz, having the low insertion loss and high linearity.

pg2010

Abstract: PG1083 PG2020 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG2001
Contextual Info: Linear hFE from 10 mA to 2 amps Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi.„,i to 160 volts 'M h '.4 M T O —46 T O —46 T O —4 6 T O —4 6 T O —46 T O —4 6 S iîS $*‘v>

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2405T6Q 1 W SP3T SWITCH DESCRIPTION The μPG2405T6Q is an SP3T GaAs FET switch which was developed for Bluetooth , wireless LAN and NFC. TM <R> This device can operate frequency from 10 MHz to 2.5 GHz, having the low insertion loss and high linearity.

high isolation SPDT

Abstract: SW SPDT 6pin HS350 GaAs MMIC SPDT Switch SOT-363 mmic 26 SPDT SOT363
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

R5775K

Abstract: SV430 a476 AM 5888 nec microcomputer dielectric resonator KYOCERA EC-NE3509M04
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HS350

Abstract: GaAs MMIC SPDT Switch SOT-363 mmic 26 SPDT SOT363
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HS350

Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2408TK 0.05 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2408TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch for 2.4 GHz wireless LAN, mobile phone and other L, S-band applications. This device operates with dual control switching voltages of 2.5 to 5.3 V. This device can operate at frequencies

Contextual Info: GaAs INTEGRATED CIRCUIT PG2415T6X 0.05 to 6.0 GHz SPDT SWITCH DESCRIPTION The PG2415T6X is a GaAs MMIC SPDT Single Pole Double Throw switch for 0.05 to 6.0 GHz applications, including dual-band wireless LAN. This device operates with dual control switching voltages of 2.7 to 3.3 V. This device can operate at frequencies