PG1119 Search Results

Contextual Info: PG1119 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).35 @I(C) (A) (Test Condition)0.5

PG2020

Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Contextual Info: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6

pg2010

Abstract: PG1083 PG2020 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG2001
Contextual Info: Linear hFE from 10 mA to 2 amps Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi.„,i to 160 volts 'M h '.4 M T O —46 T O —46 T O —4 6 T O —4 6 T O —46 T O —4 6 S iîS $*‘v>

pg2004

Abstract: PG2011 pg2001 PG2006
Contextual Info: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE

PG1118

Abstract: PG1119 PG1120 PG1121 PG1122 PG1123 PG1124 PG1125 PG1126 PG1135
Contextual Info: 0043592 A P 1 E LE C TR O N IC S • -¡»îl ‘‘ " " . P I E L E ’C T R O M r C S ÍÑ C 13A 00 85 IN C 13 DE | T -3 3 -o l □ □ 4 3 5 Ei5 QOODOflS IN T ER IM B U L L E T IN , » S u b ject to Revision Without Notice . •? POWER TRANSISTOR ENGINEERING BUUETIN

PG1118

Abstract: PG1119 PG1120 PG1121 PG1122 PG1123 PG1124 PG1125 PG1126 PG1135
Contextual Info: 0043592 A P I :-'*>A P i'E L E C T R O N IC S .->V E L EC TR O N l X s T Ñ c IN C 1_3A 00 8 5 _ J2 L # * L £ Z 13 m T J d OMSS^S 00000B5 M INTERIM BULLETIN . Su bject to Re vision Without Notice -JU N E 22, 1970 POWER TRANSISTOR ENGINEERING BULLETIN TYPE PG1118 thru PG1135, 2 AMP NPN