PH-15 TRANSISTOR Search Results

712 transistor smd sot23

Abstract: 33m ph diode smd transistor 718 diode PH 33m
Contextual Info: Value Code Inductor ph Code .01 .012 .015 .018 000 Oil 001 009 ph Code pFID. .10 .12 .15 .18 010 012 015 018 _ _ . _ .022 002 .22 022 _ _ - _ .027 007 .27 027 - _ .033 003 .33 033 _ - - - .039 009 .39 039 . _ _ - _ .047 004 .47 047 _ _ - _ .056 005 .56 056

Contextual Info: Aß Avionics Pulsed Power Transistor PH 1090-15S Preliminary 15 Watts, 1030-1090 MHz, 10 jis Pulse, 1% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration

Contextual Info: subject to change without notice September 15, 2003 3260 Data Sheet 27631.50 ADVANCE INFORMATION 2-WIRE, CHOPPER-STABILIZED, PRECISION HALL-EFFECT BIPOLAR SWITCH Suffix Code 'LH' Pinning (SOT23W) 3 X NC NO (INTERNAL) CONNECTION Dwg. PH-003-5 2 GROUND SUPPLY

GH-007-4

Abstract: 3362 resistor
Contextual Info: subject to change without notice September 15, 2003 3361 AND 3362 Data Sheet 27621.50* PRELIMINARY INFORMATION 2-WIRE, CHOPPER-STABILIZED, HALL-EFFECT SWITCHES Suffix Code 'LH' Pinning (SOT23W) 3 X NC NO (INTERNAL) CONNECTION Dwg. PH-003-5 2 GROUND SUPPLY

K 3115

Abstract: transistor marking code 325 bf550R transistor jt BF550 PHILIPS 1980 MARKING SA transistor transistor marking SA
Contextual Info: I N AMER PH IL bbS3T31 001S7QÔ =1 IP S/»IS CRETE_ O b E ^ BF550 3 ¡ - 15- r - SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor Is primarily intended for use in i.f. detection applications.

C2631 transistor

Abstract: IC vco 900 1800 mhz 12pf varactor c2631 SA900 transistor c2631 IS-54 KV1470 SA7025 SA900BE
Contextual Info: RF COMMUNICATIONS PRODUCTS U M P k S l n l E E SA900 l/Q transmit modulator Product specification December 15, 1994 IC17 Data Handbook Philips Semiconductors PHILIPS PH ILIPS 9 711002b Q0AM5Ô0 551 This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors RF Communications Products

BUS133

Abstract: BUS133A BUS133H
Contextual Info: rr • DEVELOPM ENTDATA bbSBTBl 0010703 5 ■ 11 T his data sheet contains advance Information and specifications are subject to change w ithout notice, BUS133 SERIES N AMER PH ILIPS/DISCRETE 5SE D — T - 3 3 - 15- SILICO N DIFFUSED POWER T R A N SIST O R S

BUK455-600B

Abstract: BUK455-600A BUK455 T0220AB
Contextual Info: N AMER PH I L I P S / D I S C R E T E 2 5 E ^53=131 D 0 0 S D 5 15 1 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

55 volt switching power supply circuit

Abstract: Fairchild 2N709 2N709 max 550 transistor All similar transistor fairchild micrologic transistor CC 11 A transistor 60 volt fairchild transistor FD200
Contextual Info: • n>L N O V EM BER 1964 103, n>L 104 — FAIRCHILD PH YSICAL DIMENSIONS wide tem perature range. Typical propagation delay at 600 pf load capacitance and a fan-out of 15 is less than 50 nsecfrom -55°C to +125°C, and is le ss than 20 nsec at a load capacitance of 50 pf and a fan-out of 7 at any tem perature.

KRC107S

Abstract: KRC108S KRC109S
Contextual Info: KRC107SKRC109S SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

KRA107S

Abstract: KRA108S KRA109S
Contextual Info: KRA107SSEMICONDUCTOR KRA109S EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

kra102s equivalent

Abstract: KRA104S kra102s KRA101S-KRA106S 106S KRA101S KRA103S KRA105S KRA106S transistor mark PH
Contextual Info: K R A IO ISKRA106S SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

BFQ67F

Abstract: BFR181TF BFR182TF BFR183TF BFR193TF BFR92AF BFR93AF S852TF SC89 SC-89
Contextual Info: RF Transistors in SOT490 SC89 Package w w w. v i s h a y. c o m PRODUCT OVERVIEW THE SMALLER THE BETTER THE SMALLER THE BETTER RF Transistors in SOT490 (SC89) Package With the new SOT490 (SC-89), Vishay Semiconductors offers a space-saving 3-pin surface-mount package that takes electrical performance and reliability

KTC4520

Abstract: TT-B-2
Contextual Info: KEC SEMICONDUCTOR KTC4520 TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. FEATURES • Excellent Switching Times. : ton=0.5juS Max. , tf=0.3j/S(M ax.), a t Ic=2A.

CI L200

Abstract: KTC4521
Contextual Info: SEMICONDUCTOR KTC4521 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. FEATURES • Excellent Switching Times. : ton=0.5iiS Max. , tf=0.3/iS(Max.), at IC=4A. • High Collector Voltage : V c e o = 5 0 0 V .

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

single phase half bridge inverter

Abstract: IGBT gate drive board fire sensor LM35 single phase IGBT based PWM inverters LEM sensor CURRENT single phase igbt based inverter 200 amps circuit board 5045-04A single phase igbt based inverter 200 amps circuit lem HA Lm35 with application note
Contextual Info: APPLIED POWER SYSTEMS, INC. BAP1551 Gate Drive Board BAP1551 Gate Drive Board Application Note and Datasheet for Half Bridge Inverters Patent Pending Introduction The BAP1551 Insulated Gate Bipolar Transistor IGBT Gate Drive Board (GDB) discussed in this Datasheet/Applications Note provides a safe, reliable, isolated interface between control

80mAF

Abstract: 6069 marking
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability

marking ph SOT-89

Abstract: C4372 KTA1660 KTC4372 kec marking SOT
Contextual Info: SEMICONDUCTOR TECHNICAL D A TA KTC4372 TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE SWITCHING APPLICATION. FEATURES • • • • • High Voltage : V ceo = 1 5 0 V . High Transition Frequency : fT=120MHz. 1W Mounted on Ceramic Substrate . Small Flat Package.

BFP620

Abstract: BFP620 acs BFP620 applications note GFT45
Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4
High gain low noise RF transistor
Provides outstanding performance for a wide range of wireless applications 2
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605

F40 marking

Abstract: KTC3882
Contextual Info: KTC3882 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. TV TUNER, VHF OSCILLATOR APPLICATION. A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX 0.45+0.15/—0.05 E 2.40+0.3 0 /- 0 .20 DIM MAXIMUM RATINGS Ta=25°C

Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz