PHOTOREFLECTOR Search Results

Contextual Info: External dimensions Unit : mm RPR-220UC30N Reflective photosensor (photoreflector) 2.8 6.4 Through hole 2.8 Absolute maximum ratings (Ta=25°C) Unit 50 mA Reverse voltage VR 5 V PD 80 mW Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO

PD 2028 b

Contextual Info: SELECTION GUIDE PA RI NO. SYSTEM INFRARED EM ITTI MG DIODES : PHOTODIODES : LAMP CATEGORYBRIGHT LED PRODUCT •PHOTOTRANSISTORS • PHOTOREFLECTORS : LIGHT BED-DDDDDï PACKAGE TYPE LAMP CATEGORY: IR: Infrared Emitting Diodes PT: Phototransistors PD: Photodiodes

IL-S-C2-S-10000

Abstract: ILS*2c2 ILSC2S10000 s2c2
Contextual Info: PHOTOREFLECTOR Light modulation photoreflector P6448 Compact module combining light modulation photo IC and infrared LED P6448 is a photoreflector consisting of a light modulation photo IC and an infrared LED, etc. The light modulation photo IC allows reliable

spi-325

Abstract: SPI-315-04 SPI-333-34 SPI-335-84 SPI-315-05 SPI-335-14 ph 33 j SPI315-84 SPI-315-84 SPI-315-14
Contextual Info: Photoreflector 7 :t IsU 7 U ? £ Photoreflector typical characteristics I c- I f 7 * h')7 U 9 9 (i 7 * h-í V 7 9 7°9 (CJt-< fti • fc tíH ifc iW itt ü Sí ( l e —d ) *)i t o <* Z O & ñ f r b ^ - t y - V - b R I f f i f o ( F ig . 7 ,8 ,9 ) hy ^

RPR-220

Contextual Info: RPR-220 Sensors Reflective photosensor photoreflector RPR-220 The RPR-220 is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A custom lamp was developed to enable the achievement of a smaller

DATASHEET OF IC 741

Abstract: ic 741 datasheet 7 HL 05 IC 741 pdf of 741 ic KPC1002E01 KPCA0001EA P6448 SE-171 photoreflector
Contextual Info: PHOTOREFLECTOR Light modulation photoreflector P6448 Compact module combining light modulation photo IC and infrared LED P6448 is a photoreflector consisting of a light modulation photo IC and an infrared LED, etc. The light modulation photo IC allows reliable

RPR-220PC30N

Abstract: ROHM photo Reflector
Contextual Info: RPR-220PC30N Reflective photosensor photoreflector Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Forward current IF 25 mA Reverse voltage VR 5 V Output (phototransistor ) Input (LED) Parameter Power dissipation PD 100 mW Collector-emitter voltage

Photodiodes

Abstract: Phototransistors Infrared LED 940nm i r led 940nm
Contextual Info: INFRARED S E R I E S SELECTION GUIDE PART NO. SYSTEM • INFRARED EMITTIMG DIODES : • PHOTODIODES : LAMP CATEGORY • PHOTOTRANSISTORS : • PHOTOREFLECTORS : | pSIl LIGHT SOURCE | |- LENS APPEARANCE I 1 ^ 1 ^ [T"|

RPR-220

Abstract: reflective lens phototransistor Infrared photosensor RPR220
Contextual Info: RPR-220 Sensors Reflective photosensor photoreflector RPR-220 The RPR-220 is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a highsensitivity, silicon planar phototransistor. A custom lamp was developed to enable the achievement of a smaller package

Contextual Info: Photoreflector U7 P— Phot oref l ect or f or reflow soldering I «« fi fi gliSSSft#iii|iBB6 Feature SPI-336-89 SPI-336-95 M'A>7M7yMm mmm If mA 50 50 «SiiK 3fe¥i3i»IÉ Electro-optical characteristics Topr jgj |fjg ¡;le£'M l i s i d jiâffiitjiiii tr.tfTyp. sat)Max.

SPI-315-05

Abstract: SPI-315-44 spi-325 PI-315-65 SPI-335-14 SPI-315-04 pin connection led emitter
Contextual Info: Photoreflector 7 :t IsU 7 U ? £ Photoreflector typical characteristics Ic - I f 7 * h') 7 U9 9 (i 7 * h-í V9 7 7° 9 (CJ t - < fti • fc tíH ifc iW itt ( l e —d ) <* Vi t o ü Sí fe lá o ( F ig . 7 ,8 ,9 ) hy ^ y 7.9 9 4 7°fr ¥->J > h^ h7 > V 7 9 9 4 7° riv"üU»ftn jz é

photoreflector

Abstract: 4H51 glass lens phototransistor P2826 hamamatsu photoreflector photoreflector hamamatsu
Contextual Info: HAMAMATSU CORP IIE D HSETbCH HAMAMATSU 5 • PHOTOREFLECTOR P2826 TECHNICAL DATA C 00D27G1 ~ T - V /- 7 3 Phototransistor output, Long focal distance 3mm , Thin package (4.0 x 4.2 x 1.7mm) The P2826 m iniature photoreflector uses a high pow er infrared LED and a highly sensitive phototransistor in a sm all epoxy resin

P3062-01

Abstract: hamamatsu photoreflector 3mm photo transistor P3062
Contextual Info: HAMAMATSU CORP ITE D • HESÌLDÌ HAMAMATSU OOOSbT? 7 ■ PHOTOREFLECTOR P3062-01 TECHNICAL DATA -^ /-7 3 Photo IC output digital output , Long focal distance (3mm), Thin package (4.0 x 4.2 x 1.7mm) The P3062-01 is a photoreflector combining a high-power in­

Contextual Info: RPR-220UC30N Reflective photosensor photoreflector Absolute maximum ratings (Ta=25°C) Input (LED) Parameter Output (phototransistor ) Symbol Limits Unit Forward current IF 30 mA Reverse voltage VR 10 V Power dissipation PD 80 mW Collector-emitter voltage

RPR-220UC30N

Abstract: P600N rpr-220
Contextual Info: RPR-220UC30N Sensors Red light source high output reflective photosensor photoreflector RPR-220UC30N The RPR-220UC30N employs a red light source which peak emitting wavelength is λp=630mm in the emitting side. Therefore, it enables not only to judge whether it is an object with conventional function or not, but also to distinguish a

Contextual Info: Sensors Basic increments for ordering Basic order increments FInfrared LEDs FPhotointerrupters S Phototransistor output molded type FPhototransistors S Phototransistor output (case type) S Digital output FReflective photosensors (photoreflectors) S Phototransistor output

PR-30 Series

Contextual Info: 表面実装型フォトリフレクタ PR シリーズ Surface Mountable Photo-reflector PR Series • 特徴／ Features 1. Developed as a chip-type SMD Photoreflector 2. Automatic mounting by chip mounter available 3. Reflow soldering available 1. 全機種ともSMD

EN6029

Abstract: SPI-335-34 26M4 L35mm
Contextual Info: Ordering number : EN6029 Infrared LED SPI-335-34 SPI-335-34 Ultraminiature photoreflector single-transistor type Features • Infrared LED plus Phototransistor (single) • DIP type • Compact type : 3.4 (L) ✕ 2.7 (W) ✕ 1.5 (H) mm • Visible light cut type

RPR-220UC30N

Contextual Info: RPR-220UC30N Reflective photosensor photoreflector Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Forward current IF 30 mA Reverse voltage VR 10 V Output (phototransistor ) Input (LED) Parameter Power dissipation PD 80 mW Collector-emitter voltage

RPR-359F

Abstract: phototransistor visible light photoreflector
Contextual Info: RPR-359F Sensors _ Reflective photosensor photoreflector RPR-359F The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity. In addition, since it is molded in

CEN-710

Contextual Info: CENTRCNIC INC» E-Q 13E DIV D I m szso OGDOSIS TECHNICAL DATA CEN- 7 10 2 | SH EET3 Photo Reflector IDimensions •Summary The Centronic CEN-710 Photoreflector consists of a infrared light emitting diode and a phototransistor with a visible light filter in a single

SPI-304-04

Abstract: led CATHODE SPI-310 SPI-302-02 SPI-306 SPI-314 SPI314
Contextual Info: Photoreflectors Ta = 25*C Electro-Optical Characteristics Absolute Maximum Ratings « « « If mA SPI-302-02 x - 7 'x > SPI-304-04 4^-tz 7 7^ — 7 X > SPI-310 x - 7 ‘x > I^ H IH K tëïti ; î > J jA SPI 30 6 SPI-314 V ceo Topr le Min. V •c uA Ic Max.

P5587

Abstract: hamamatsu photoreflector photoreflector hamamatsu
Contextual Info: PHOTOREFLECTOR PHOTO 1C OUTPUT P5587 HAMAMATSU TECHNICAL DATA • A BSO LUTE MAXIMUM RATI ^GS(Ta=25°C) [Dimensional Outline (Unit:mm) ^ ^ ra m e te rss?Si^ li# ; ìSym tìol llV a lu e iS jliünits? Forward Current 50 If mA Vr Reverse Voltaqe 5 V Input

P5588

Contextual Info: PHOTOREFLECTOR PHOTO 1C OUTPUT P5588 H A M A M A T S U TECHNICAL DATA ABSOLUTE MAXIMUM RATINGS (Ta=25°C) •.' Paramat er •• Forward Current Input Reverse Voltaqe Power Dissipation Supply Voltaqe Output Voltaqe Output Output Current Power Dissipation