PJ 3236 Search Results

Contextual Info: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted

32C59

Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C !3 A2EC !38  4C6C"#$%9C !9E79845633E92D36453 8C&&9A29!6 9E73D9#C6DC3 99'7C 39!6 D388A299 2# 4C6C"#$%9EC !39 759BF892D364573 8C&9A29F6 9E73D9#C6DC3 99 7C 39F6

Contextual Info: fflff » m i r CMM0335 Advanced Product In fo rm atio n Septem ber 1996 1 o f 2 890 to 915 MHz 6V, 35 dBm, GSM Power Amplifier Features □ 55% Power Added Efficiency □ 35 dBm Output Power □ Low Harmonic Distortion □ Low Cost, SO-8 Surface Mount Package

CMM0331-AK

Contextual Info: CMM0331 A d v a n c e d P ro d u c t In form ation S e p te m b e r 1 9 9 6 1 o f 2 824 to 928 MHz 3V, 30.5 dBm AMPS Power Amplifier Features □ 55% Power Added Efficiency from 3V Supply □ 30.5 dBm Output Power □ Low Harmonic Distortion □ Low Cost, SO-8 Surface Mount Package

CMM0331-AK

Contextual Info: S = = €E LE R Ê T£K CMM0331 824 to 928 MHz 3V, 30.5 dBm AMPS Power Amplifier A d v a n c e d P ro d u c t In form ation S e p te m b e r 1 9 9 6 1 o f 2 Features □ 55% Power Added Efficiency from 3V Supply □ 30.5 dBm Output Power □ Low Harmonic Distortion

Contextual Info: ir e i C D iT E V CAS2404 2.4 to 2.5 GHz Power Amplifier-T/R Switch Product In fo rm atio n M arch 1 9 9 6 1 o f 4 Functional Block Diagram Features □ +21 dBm Output Power □ 8 dB Power Control Range □ PCMCIA Compatible 8 7 6 5 4 3 2 1 Applications

celeritek LNA

Abstract: IM361 000G14 CAS2403 CAS2403-AM CAS2403-AM-000T CCV2501 SOIC-16
Contextual Info: rei eoi r e a r P rod uct S p e c ific a tio n s J u ly 1995 1 o f 4 CAS2403 2.4 to 2.5 GHz Power Amplifier-T/R Switch Features □ +20 dBm Output Power □ Power Control □ PCMCIA Compatible Functional Block Diagram 8 7 6 5 4 - 3 2 1 Applications □ Wireless LANs

Contextual Info: CELERSTEK CCV2501 2.4 to 2.5 GHz Integrated Converter P rod uct S p ecificatio n s J u ly 1995 1 o f 4 Features □ Meets FCC ISM Band Regulations □ PCMCIA Compatible 16 Pin SOIC Package □ Low Power Consumption With Standby Mode for Battery Powered Applications

s02b

Abstract: 2764 S02B-5 2764D J621 lm 3090 IDT100494 IDT101494 IDT10494 2764 pin diagram
Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT SRAM :ÏWNs\P Jd t) IDT10494 IDT100494 IDT101494 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • 16,384-words x 4-bit organization Address access time: 4.5/5/6/7/8/10/15 ns

100A484

Abstract: 100484 Z623 I60S4 10A484
Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4Kx 4-BIT SRAM FEATURES: • 4096-words x 4-bit organization • Address access time: 4/4.5/5/7/8/10/15 ns • Low power dissipation: 900mW (typ.) • Guaranteed Output Hold time • Fully compatible with ECL logic levels

100A484

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4Kx 4-BIT SRAM FEATURES: • 4096-words x 4-bit organization • Address access time: 4/4.5/5/7/8/10/15 ns • Low power dissipation: 900mW (typ.) • Guaranteed Output Hold time • Fully compatible with ECL logic levels

AD33b

Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C !3 A2EC !38  5C4578C73D36 389C ! 57"59768!F3 9EC !3 &D2' 36A4F36 6*23428654F4 &+,-6.6/$& 0+61236.6$46)60+566.64 B817364835(3 # 97D11324835(3 # :FF314(4F2373

marking M9u

Abstract: 5962-E1257-2
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-OA APPROVED R EV SH EE T REV SH EET R E V STATUS O F SH EETS REV SH EET 1 PM ICN /A 4 5 6 7 8 9 10 11 12 13 14 15 DEFENSE ELECTRO NICS SU PPLY CENTER DAYTON, OHIO 45444 CMA In fA / n A y s . A tt DR/ iWING APPR O V A L^ ffË T '

Contextual Info: :ÏWNNa HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT SRAM Jd t) IDT10494 IDT100494 IDT101494 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • 16,384-words x 4-bit organization Address access time: 4.5/5/6/7/8/10/15 ns

Contextual Info: /S T ^ 7 /. S G S -1 H 0 M S 0 N B fflllg @ ilL i® T n M ID i L 6 2 5 8 PWM CONTROLLED - HIGH CURRENT DMOS UNIVERSAL MOTOR DRIVER PRODUCT PREVIEW • ABLE TO DRIVE BOTH WINDINGS OF A BI­ POLAR STEPPER MOTOR OR TWO DC MO­ TORS ■ OUTPUT CURRENT UP TO 1.5A EACH

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-OA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 1 PMICN/A 4 CMA 5 6 7 8 9 10 11 12 13 14 15 fA/nAys. DR/iWING APPROVAL^ffËT' 15 NAY 1989 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 t In Att AMSC N/A

74S129

Abstract: 54FCT240 54fct240a 5962-8765501RX 5962-8765502 5962-87655012X p54pct240 7411 TTL 7411 truth table idt54fct240adb
Contextual Info: REVISIONS LTR DESCRIPTION DATE {YR-MO-OA Add vendor CAGE 75569. Add d e v ic e ty p e 02. Add ca se o u t lin e S. T e c h n ic a l changes in t a b le I . E d it o r ia l changes th ro u g h o u t. 89 MAR 28 REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET

54FCT273a

Abstract: 54FCT273 marking a11 diode 5962-8765601RX 5962-8765601SX
Contextual Info: REVISIONS LTR D ESCRIPT IO N D A T E Y R -M O -O A Add case outline "S" to device type "01". Add device type 02 to drawing for case outlines R, S, and 2. Add vendors CAGE 75563 and 27014 to device type 01. Add vendors CAGE 61772 and 75569 to device type 02.

2N667

Abstract: 2N6671 2N6673 TA100
Contextual Info: MIL-S-19500/536 USAF 22 O c t o b e r 1 9 8 0 MILITARY SPECIFICATION S E M I C O N D U C T O R D E V I C E , T R A N S I S T O R , NPN, S I L I C O N , P O W E R T Y P E S 2 N6 6 7 1 , A ND 2 N6 6 7 3 , JAN, J A N T X , A N D J A N T X V This s p e c i f i c a t i o n

TX2N1724

Abstract: 2N1724 2N1722 ADE350
Contextual Info: M IL -S -1 9 5 0 0 /2 6 2 F 19 February 196? SUPERSEDING M IL -S -1 9 5 0 0 /2 6 2 E 25 O ctober 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, N PN , SILICON, HIGH-POWER T Y PE S 2N 1722, TX2N 1722, 2N 1724, AND TX2N 1724 T h is sp e c ific a tio n i s m andatory fo r u s e by a ll D ep a r t­

Halbleiterbauelemente DDR

Abstract: MAA 436 TESLA mikroelektronik applikation Radio Fernsehen Elektronik 1977 Heft 9 IL709M mikroelektronik Heft MAA725 K553UD1A "Mikroelektronik" Heft Tesla katalog
Contextual Info: INFORMATION MIKROELEKTRONIK APPLIKATION K 159 INNENSCHALTUNG SONDERHEFT IMPORT­ BAUELEMENTE UDSSR INTEGRIERTE SCHALTUNGEN INFORMATION-APPLIKATION SONDERHEFT IMPORTBAUELEMENTE INTEGRIERTE SCHALTUNGEN MIKROELEKTRONIK HEFT 6 veb Halbleiterwerk frankfurt oder

Contextual Info: A E M Ä N ] ! DMF©[^G!Mini K] in t e l 8XC196NU COMMERCIAL CHMOS 16-BIT MICROCONTROLLER Chip-select Unit — 6 Chip-select Pins — Dynamic Demultiplexed/Multiplexed Address/Data Bus for Each Chip Select — Programmable Wait States 0-15 for Each Chip Select

ix335

Contextual Info: I =¥= = = = ’= IBM13N16644HC IBM13N16734HC P relim inary 16M x 64/72 2 Bank U nbuffered SDRAM M odule Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only

germanium

Abstract: 74HC244A 74HC589 ALI M 3329 B1 74HC163
Contextual Info: High-Speed CMOS Data Function Selector Guide Design Considerations Device Data Sheets [3 Ordering Information [4 W H A T ’S NEW ! DATA SHEETS ADDED DATASHEETS DELETED MC74HCU04A MC54/74HC390A MC54/74HC08 MC54/74HCT541 MC74HC76 MC54/74HC393A MC54/74HC540