PLCC32 512K Search Results

tsop32 8x20

Abstract: TSOP32 Package M29F040 PLCC32 QR124 TSOP32 m29F040 micron
Contextual Info: QUALIFICATION REPORT M29F040 T6-U20: 4 Mb x8 FLASH MEMORY in PLCC32 and TSOP32, AGRATE R1 DIFFUSION LINE INTRODUCTION The M29F040 is a 4 Mb Single Supply (5V) Flash memory organized as 512K bytes of 8 bits each. It is offered in PLCC32 and TSOP32 packages. It can be programmed and erased in-system or in standard

TSOP32 Package

Abstract: TSOP32 M29W040 PLCC32 QR125
Contextual Info: QUALIFICATION REPORT M29W040 T6-U10: 4 Mb x8 FLASH MEMORY in PLCC32 and TSOP32 INTRODUCTION The M29W040 is a 4 Mb Single Supply (2.7V to 3.6V) Flash memory organized as 512K bytes of 8 bits each. It is offered in PLCC32 and TSOP32 packages. It can be programmed and erased in-system or in

QR114

Abstract: CDIP32 tsop32 8x20 TSOP32 Package M29F040 PLCC32 TSOP32 PLCC32 package
Contextual Info: QUALIFICATION REPORT M29F040 T6-U10: 4 Megabit x8 SINGLE SUPPLY FLASH MEMORY in PLCC32 and TSOP32 INTRODUCTION The M29F040 is a 4 Megabit Single Voltage (5V) FLASH Memory organized as 512K bytes of 8 bits each. It is offered in PLCC32 and TSOP32 packages. It can be programmed and erased in-system or in standard

M28F512

Abstract: PLCC32
Contextual Info: QUALIFICATION REPORT M28F512 512K 64K x 8 CMOS T5-U20 FLASH MEMORY in PLCC32 INTRODUCTION The M28F512 is a 512K FLASH Memory organised as 64K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which has been especially developed

T5-U20

Contextual Info: QUALIFICATION REPORT M28F512 512K 64K x 8 CMOS T5-U20 FLASH MEMORY in PLCC32 INTRODUCTION The M28F512 is a 512K FLASH Memory organised as 64K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which has been especially developed

Contextual Info: M27W401 4 Mbit 512Kb x 8 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST READ ACCESS TIME: - 70ns at V cc = 3.0V to 3.6V - 80ns at V cc = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C4001 ■ LOW POWER CONSUMPTION: PLCC32 (K) TSOP32 (N)

256k x8 SRAM 5V

Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)

Contextual Info: 512K TO 2M FLASH W29 SERIES • 1M PAGE MODE FLASH REQUIRING +5V ONLY FOR PROGRAM AND ERASE, NO +12V VPP, WITH LOWER CURRENT CONSUMPTION THAN COMPARABLE FLASH MEMORY PARTS • UP TO 10,000 READ/WRITE CYCLES, DATA PROTECTION AND 10 YEAR DATA RETENTION FOR W29

plcc32 pinout

Abstract: TSOP32 M29W040 PLCC32
Contextual Info: M29W040 4 Mb 512K x 8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Block: 1.5 sec typical – Chip: 2.5 sec typical

M27W401

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M27W401 4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 2.7V to 3.6V FAST ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V – 80ns at VCC = 2.7V to 3.6V LOW POWER CONSUMPTION: – Active Current 15mA – Standby Current 20µA

M28F512

Abstract: PDIP32 PLCC32
Contextual Info: M28F512 512K 64K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max

M28F512

Contextual Info: rZ 7 SCS-THOMSON M28F512 512K 64K x 8, Bulk Erase FLASH MEMORY DATA B RIEFING • ■ ■ ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10ns typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION

Contextual Info: M27V405 4 Mbit 512Kb x 8 Low Voltage OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION: – Active Current 15mA – Standby Current 20µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIMES: – Typical 48sec. (PRESTO II Algorithm)

Contextual Info: Æ T S C S -THOMSON * 7 #. ÜO g^(& l^(gWiQ(gi M29W040 4 Mb (512K x 8, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ BYTE PROGRAMMING TIME: 12jjs typical

plcc32 pinout

Contextual Info: M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 70ns 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Sector: 1.0 sec typical – Bulk: 2.5 sec typical

AI01378

Abstract: M29F040 PLCC32 TSOP32 B29F040 512k x 8 chip block diagram plcc32 pinout
Contextual Info: M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical

ST m27c512

Abstract: TSOP44 Package SO32 m27c1001 plcc32 ST M27C256B Atmel 642 M27C4002 m27c4001 CROSS REFERENCE PLCC32 package EPROM m27c2001
Contextual Info: OTP and UV EPROM Products www.st.com/eprom Cross Reference Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Introduction Long-term commitment STMicroelectronics will support the EPROM market in the long term with a strong commitment, guaranteeing manufacturing capability and high quality service. Continuous

mm29f040

Contextual Info: SGS-THOMSON M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10jis typical ERASE TIME - Block: 1.0 sec typical - Chip: 2.5 sec typical

M29F040

Abstract: PLCC32 plcc32 pinout TSOP32 B29F040
Contextual Info: M29F040 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical

plcc32 pinout

Abstract: TSOP32 Package
Contextual Info: M29W040 VERY LOW VOLTAGE SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 100ns 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Sector: 1.5 sec typical

M27C4001

Abstract: SGS-Thomson e-prom, M27C4001 PDIP32 PLCC32 TSOP32 M27C4001G
Contextual Info: M27C4001 4 Mbit 512Kb x 8 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIMES of AROUND 48sec.

TSOP32

Abstract: plcc32 pinout TSOP32 Package M29W040 PLCC32 TSOP-32
Contextual Info: M29W040 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Block: 1.5 sec typical

M27V201

Abstract: M27V401 PDIP32 PLCC32 TSOP32
Contextual Info: M27V401 4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM DATA BRIEFING • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 120ns ■ LOW POWER CONSUMPTION: – Active Current 15mA at 5MHz 32 32 – Standby Current 20µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

M27C4001

Abstract: SGS-Thomson e-prom, M27C4001 SGS-Thomson m27c4001 PDIP32 TSOP32 Package PLCC32 TSOP32 41h32
Contextual Info: M27C4001 4 Mbit 512Kb x 8 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIMES of AROUND 48sec.