PLCC32 PINOUT Search Results

Atmel part numbering

Abstract: FBGA48 TFBGA48 te28f320b3bd 49XX TSOP32 Package TE28F320B3TD MBM29F080A tsop48 te28f320c3bd
Contextual Info: Standard NOR Flash family Cross-reference guide September 2005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties

IC 555 timer low volt

Abstract: CAT28F512P-90 CAT28F010PI-12 CAT28F001P-12T PDIP32 CAT28F512NI-90 CAT28F001 CAT28F001N-90T PLCC32 512k CAT28F001N-90B
Contextual Info: BACK NEXT CATALYST Flash Memory CAT28Fxxx Series electrically erasable and reprogrammable Flash memory is ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second.

plcc32 pinout

Abstract: BIOS 32 Pin PLCC TSOP 28 SPI memory Package flash 89C58 64Kx8 CMOS RAM sst BIOS 8 Pin PLCC tsop32 static ram 64kx8 SST49LF040A MCU 64KX16
Contextual Info: Application Specific Memory Products Serial Flash—45 Series ComboMemory Family—31, 32 & 34 Series The Serial Flash family of products is a low-power application specific memory that implements Read and Program/Erase operations through the Serial Peripheral Interface SPI bus compatible serial protocol.

M93C46BN1

Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA

MK48T87B24

Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Contextual Info: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W

ST27C256-20CP

Abstract: SGS-Thomson 256k eprom ST27C256-17CFN 27C256 DIP ST27C256-20TFN 32-PIN PLCC32 st27c256p ST27C256-20CFN st 27c256
Contextual Info: 7^5^537 C T ^ 7 # S G S C S - T H O M S O N M « M » 3> - Z £ □027474. J ! « ! S - T HO MS ON S T 2 7 C 2 5 6 F N . S T 2 7 C 2 5 6 P 30E D 256K (32K x 8 CMOS ONE TIME PROGRAMMABLE ROM • COMPATIBLE TO ST27C256 EPROM (ELEC­ TRICAL PARAMETER,

MLP8 2x3mm

Abstract: MLP8 m25p64 MARKING code mf stmicroelectronics AN2043 SO8 NARROW Part Marking STMicroelectronics flash memory EEPROM 16Mb M25P stmicroelectronics eeprom M25P16
Contextual Info: Serial EEPROM, serial Flash and application specific serial non-volatile memories Selection guide February 2005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties

plcc32 pinout

Abstract: TSOP32 M29W040 PLCC32
Contextual Info: M29W040 4 Mb 512K x 8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Block: 1.5 sec typical – Chip: 2.5 sec typical

M28F201

Abstract: TSOP32 Package PLCC32 TSOP32
Contextual Info: M28F201 REVISION HISTORY - cont’d Date Description Stand-by Current from 10uA typ. to 5uA typ. November ’97 AC Test Circuit and Waveforms - modified PLCC mechanical data and diagram - modified TSOP mechanical data - modified August ’98 New ST Logo and Disclaimer - added

TSOP32

Abstract: TSOP32 Package PLCC32
Contextual Info: M28W201 2 Mbit 256Kb x8, Bulk Low Voltage Flash memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10µs typical (PRESTO F Algorithm) ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION

Contextual Info: Æ T S C S -THOMSON * 7 #. ÜO g^(& l^(gWiQ(gi M29W040 4 Mb (512K x 8, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ BYTE PROGRAMMING TIME: 12jjs typical

plcc32 pinout

Contextual Info: M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 70ns 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Sector: 1.0 sec typical – Bulk: 2.5 sec typical

M28F201

Abstract: PLCC32 TSOP32
Contextual Info: M28F201 2 Mb 256K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical

plcc32 pinout

Abstract: M28F101 PDIP32 PLCC32 TSOP32
Contextual Info: M28F101 1 Mb 128K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max

mm29f040

Contextual Info: SGS-THOMSON M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10jis typical ERASE TIME - Block: 1.0 sec typical - Chip: 2.5 sec typical

M29F040

Abstract: PLCC32 plcc32 pinout TSOP32 B29F040
Contextual Info: M29F040 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical

plcc32 pinout

Abstract: M28F101 PLCC32 TSOP32 TSOP32 Package PDIP32
Contextual Info: M28F101 1 Mbit 128Kb x8, Bulk Flash Memory DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical

plcc32 pinout

Abstract: TSOP32 Package
Contextual Info: M29W040 VERY LOW VOLTAGE SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 100ns 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Sector: 1.5 sec typical

TSOP32

Abstract: plcc32 pinout TSOP32 Package M29W040 PLCC32 TSOP-32
Contextual Info: M29W040 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Block: 1.5 sec typical

A13E

Abstract: 28F201 5 pin A13E M28F201
Contextual Info: SGS-1H0MS0N M28F201 m 2 Mb 256K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING • ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10ns typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ LOW POWER CONSUMPTION

28F101

Abstract: 013d01 M28F101
Contextual Info: / = T SCS-THOMSON ^ 7 # ll ra®[l[L[iOT®R!lD i M28F101 1 Mb (128K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING • ■ ■ ■ ■ ■ ■ ■ ■ - 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10|iS typical

Contextual Info: SGS-THOMSON M29F040 ^7# ^0 g® i[L[lW®raD(gi 4 Mb (512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: lO^is typical ■ ERASE TIME

TS27C64 25cp

Abstract: TS27C64A-20CP 27C64A ROM TS27C64A-15CFN T11Bl TS27C64 m7am 32-PIN DIP-28 PLCC32
Contextual Info: 7•= e ^ 23 7 0 0 2 74b4 '«-1^ Ô 1 3 -2 5 TS27C64AFN TS27C64AP S C S -T H O M S O N m S G S-TH0MS0N 3QE 64K 8K x 8) C M O S O N E T IM E P R O G R A M M A B LE ROM COMPATIBLE TO TS27C64A EPROM (ELECTRICAL PARAMETERS, PROGRAMMING) PROGRAMMING VOLTAGE 12.5V

Contextual Info: M28V201 LOW VOLTAGE 2 Megabit 256K x 8, Chip Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 150ns LOW POWER CONSUMPTION – Active Current: 15mA Max. – Standby Current: 10µA Typ. 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE 3.3V ± 0.3V SUPPLY VOLTAGE