PN102F Search Results

Contextual Info: Panasonic Phototransistors PN101F, PN102F Silicon NPN Phototransistors For optical control system s • F eatures • F la t w in d o w design w hich is suited to optical system s • L ow d a rk c u r r e n t : I CEO = 5 nA typ. • F a st re sp o n se : tr, tf = 3 (J.s (typ.)

PT-103

Abstract: PH110 PT108A pt77 PH114 PH109 PN101 PN101F PT-101 PT-102
Contextual Info: - 288- I 1'J PT108A FH109 PH110 rn n ^ PH1161L PT8L PN101 PN101F PN102F PN102 PN106 PN107 PN108 PN107F PN108F PN10SCL PN109CL PN109F PN109L PN 110 PN111W PN115 PN116 PN120S PN121S PN123S PN126S PN127 PN147 £ tfc B & it & II min mA 'S 0.2 10 0.2 0.04 0.04

PN102F

Abstract: PNZ102F
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo

PN102F

Abstract: PNZ102F
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)  Fast response: tr , tr = 3 µs (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. M Di ain sc te on na tin nc ue e/ d 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)

Contextual Info: Phototransistors PNZ102F PN102F Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)  Fast response: tr , tr = 3 µs (typ.)  Wide directivity characteristics

smd transistor A7p

Abstract: PN101 PN101F PN102F
Contextual Info: Panasonic Phototransistors PN101F, PN102F Silicon NPN Phototransistors For optical control systems • Features • F la t w in d o w design w h ich is suited to optical system s • L ow d ark cu rre n t : ICEO = 5 nA typ. • F a st re sp o n se : tr, tf = 3 |as (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)  Fast response: tr , tr = 3 µs (typ.)

PNZ335

Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)

"infrared led" 800 nm 980 nm

Abstract: LN70 emitter "1060 nm" infrared emitting diode led 1060-nm mW LED "1060 nm" LN162S PN101 PN101F PN102F
Contextual Info: _ P A N A S O N I C INDL/EI.rK-fSEMTT- 7 PC Ì | 6932852 PANASONIC I N D L * E L E C T R O N IC '□□□cifl55 1 | 72C 09855 D I'^ 5 * /K 7 LN162S 1 Wl - a LN162S GaAs K/ G a A s Infrared Light Emitting Diode ^ S b lc f t y W lilf f l/F o r Optical Control Systems