PN120 Search Results

Contextual Info: Panasonic Infrared Light Emitting Diodes LN62S G aAs Infrared Light Em itting Diode For optical control systems This product can be combined with various types of silicon photodetectors such as the PN120S to form optical controllers. • Features • High-power output, high-efficiency : PQ = 3.5 mW typ.

LN62S

Abstract: PN120S PNZ120S
Contextual Info: Phototransistors PNZ120S PN120S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an optical controller Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Wide directional sensitivity for easy use

PN120S

Abstract: LN62S
Contextual Info: Panasonic Phototransistors PN120S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an optical controller • Features • H igh sensitivity • W ide directio n al sensitivity fo r easy use • F a st re sp o n se : tr, tj = 3 |xs typ.

Contextual Info: Panasonic Infrared Light Emitting Diodes LN62S G aAs Infrared Light Emitting Diode For optical control systems This product can be com bined with various types o f silicon photodetectors such as the PN120S to form optical controllers. • Features • H igh-pow er output, high-efficiency : P Q = 3.5 m W typ.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ120S (PN120S) Silicon planar type Unit: mm For optical control systems 3.75±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use

PT-103

Abstract: PH110 PT108A pt77 PH114 PH109 PN101 PN101F PT-101 PT-102
Contextual Info: - 288- I 1'J PT108A FH109 PH110 rn n ^ PH1161L PT8L PN101 PN101F PN102F PN102 PN106 PN107 PN108 PN107F PN108F PN10SCL PN109CL PN109F PN109L PN 110 PN111W PN115 PN116 PN120S PN121S PN123S PN126S PN127 PN147 £ tfc B & it & II min mA 'S 0.2 10 0.2 0.04 0.04

PN120S

Abstract: PNZ120S
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ120S (PN120S) Silicon planar type For optical control systems • Features  High sensitivity  Wide directivity characteristics for easy use  Fast response: tr , tf = 3 s (typ.)

Contextual Info: Phototransistors PNZ120S PN120S Silicon planar type Unit: mm For optical control systems 3.75±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use • Fast response: tr , tf = 3 µs (typ.) • Signal mixing capability using base pin

Contextual Info: Panasonic Phototransistors PN120S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an optical controller • Features • • • • H igh sensitivity W ide directional sensitivity for easy use Fast response : tr, % = 3 jlls typ.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ120S (PN120S) Silicon planar type Unit: mm For optical control systems 4.1±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use

Contextual Info: Phototransistors PNZ120S PN120S Silicon planar type Unit: mm For optical control systems 4.1±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use • Fast response: tr , tf = 3 µs (typ.) • Signal mixing capability using base pin

Contextual Info: Phototransistors PN120S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an optical controller M Di ain sc te on na tin nc ue e/ d Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Wide directional sensitivity for easy use

LN62S

Abstract: PN120S
Contextual Info: Phototransistors PN120S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 For optical control systems 12.5 min. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo

Infrared Emitting Diode

Abstract: panasonic 8090 LN62S PN120S GaAs 850 nm Infrared Emitting Diode
Contextual Info: Panasonic Infrared Light Emitting Diodes LN62S GaAs Infrared Light Emitting Diode For optical control systems This product can be combined with various types of silicon photodetectors such as the PN120S to form optical controllers. • Features • High-power output, high-efficiency : P0 = 3.5 mW typ.

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Abstract: IT9010 LN62S PN120S PN121S PN123S T-9856 UCA 1400
Contextual Info: PANASONIC INDL/ELEK-CSEMI} 7SC D | bT3SflSM □ O O c!flfll4 fl | _ 6 9 3 2 8 52 P ANASONIC IN D L * ELECTRONIC 72C 0 9 8 8 4 D PN120S PN120S I- H I - G l '> ij u y NPN rhh / S i NPN Phototransistor Optical Control Systems LN62S £<7 Mfrnt>-&T'7i-s h -f Matched

TMPZ84C011BF-6

Abstract: TMPZ84C011BF6 tmpz84c011bf TMPZ84C015BF-8 TMPZ84C015BF TMPZ84C011 tmpz84c00ap-6 BM80-28 TMPZ84C013AT-8 TMP87CH20F
Contextual Info: Development Tool List Hardware Edition 3/4 Series/ Family name Target MCU/MPU TLCS-Z80 Package TMPZ84C00AP-6/8 DIP40 TMPZ84C011BF-6 QFP100 TMPZ84C013AT-8 PLCC100 TMPZ84C015BF-8 /QFP100 TMPZ84C81 OAF-8 TMPZ84C112AN-6/AF-8 Controller Extension Emulator/ boardiASSP

TMP90PM40F

Abstract: TLCS-90 tmp90c845af TMP90C845F TMP91C640F TMP68303 TMP90C041F BM1116A tlcs90 PN210022
Contextual Info: Development Tool List Hardware Edition 4/4 Series/ Family name Target MCU/MPU TMP91C640N Package Controller Emulator/ Emulation pod ExWnion boatfASSP adaoter booti Emulation MCU probe Pin cornerai»! adapta TMP91C641N TMP90C840AN TMP90C841 AN TMP90C041AN

Contextual Info: M m ? * •ft««:»» £ mu 1 01 *£ 8 :8 » IDT7052S/L HIGH-SPEED 2K x 8 FourPort STATIC RAM : mm; -j Features TTL-compatible; single 5V ±10% power supply Available in 120 pin and 132 pin Thin Quad Flatpacks and 108 pin PGA Military product compliant to MIL-PRF-38535 QML

Contextual Info: IDT7054S/L PRELIMINARY HIGH-SPEED 4K X 8 FOURPORT STATIC RAM Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed access — Military: 20/25/35/45ns max. — Commercial: 15/20/25/35/45ns (max.) • Low-power operation — IDT7054S

Contextual Info: BiCMOS StaticRAM 240K 16K x 15-BIT CACHE-TAG RAM For PowerPC and RISC Processors FEATURES: • 16K x 15 Configuration - 1 2 TAG Bits - 3 Separate I/O Status Bits (Valid, Dirty, Write Through) • Match output uses Valid bit to qualify MATCH output • High-Speed Address-to-Match comparison times

Contextual Info: CMOS Clocked FIFO With Bus Matching and Byte Swapping IDT723613 64x36 Integrated Device Technology, Inc. FEATURES: • Free-running CLKA and CLKB may be asynchronous or coincident permits simultaneous reading and writing of data on a single clock edge • 64 x 36 storage capacity FIFO buffering data from Port A

Contextual Info: ggSi'x jjûfey CMOS SyncBiFIFO 256 x 36 x 2, 512 x 36 x 2, 1024x36x2 IDT723622 ¡DT723642 Integrated Device Technology, Inc. Advance inform ation for the IDT723622 Final for the IDT723632 Advance inform ation for the IDT723642 FEATURES: • Free-running CLKA and CLKB m ay be asynchronous or

Contextual Info: CMOS SyncBiFlFO 256x36x2, 512x36x2, 1,024x36x2 IDT723622 IDT723632 IDT723642 Hhtegiated Devize Technology, lie . NOTE: There is an errata notice on the last page and the corrections have been incorporated into this document. FEATURES: • Free-running C LK A and CLKB may be asynchronous or

Contextual Info: CMOS SyncFIFO IDT723611 64x36 Integrated Device Technology, Inc. FEATURES: • Free-running CLKA and CLKB may be asynchronous or coincident permits simultaneous reading and writing of data on a single clock edge • 64 x 36 storage capacity • Synchronous data buffering from Port A to Port B