PN3645 TRANSISTOR Search Results

Contextual Info: „y PN 3644 PN3645 PNP SILICON PLANAR ÉPITAXIAL TRANSISTORS PN 3644, PN 3645 PNP are silicon planar epitaxial transistors designed for small signal general purpose amplifiers and switches. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage

PN3644

Abstract: PN3645 silicon planar epitaxial transistors
Contextual Info: PN 3644 PN3645 ^ PNP SILICON PLANAR ÏPIÎTAXIAL TRANSISTORS PN 3644, PN 3645 PNP are silicon planar epitaxial transistors designed for small signal general purpose amplifiers and switches. EBC ABSOLUTE MAXIMUM RATINGS PN36#5 Collector-Base Voltage 60V Collector-Emitter Voltage

PN3644

Abstract: PN3645
Contextual Info: PN 3644 PN3645 _ PN P SILICON PLANAR ÉPITAXIAL TRANSISTORS PN 3644, PN 3645 PNP are silicon planar epitaxial transistors designed for small signal general purpose amplifiers and switches. ESC V , ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage PN3644 4 5 V 6 0 V

Contextual Info: PN3645 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)35nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.80 h(FE) Max. Current gain.

PN3645

Abstract: PN3645 TRANSISTOR CBVK741B019 F63TNR PN2222N PN2907A
Contextual Info: PN3645 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25'C, U nle ss Otherv M axim um R atings Type No. M PSA 9 3 ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 200 200 5 Po 'c (W) (A) Tc=25”c 0.625 0.5 'cso ^CB *CES ^CE >V (MA) @ (V) (mA) 0(V)

MPSL51

Abstract: P2N2907 PN2906 PN2906A PN2907 PN3638 PN3638A PN3644 PN3645
Contextual Info: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) Maximum Ratings Type No. MPSA93 MPSL51 P2N2907 P2N2907A PN2906 PN2906A PN2907 PN29Q7A PN3638 PN3638A 200 ^CEO ^EBO (V) Min (V) Min 200 'c (W) (A) @Tc=25°c

MPSA93

Abstract: MPSL51 P2N2907 P2N2907A PN2906 PN2906A PN2907 PN2907A PN3638 PN3638A
Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. Electrical Characteristics (Ta=25"C, U Pd 'c eo V CBO ^CEO ^EBO (V) Min (V) Min (V) Min MPSA93 200 200 5 0.625 0.5 0.25 MPSLS1 100 100 4 0.625 0.6 P2N2907 60 40 5 0.625 0.6 P2N2907A PN2906 PN2906A

2N3645

Abstract: 2N4355 2N3503 fairchild 2N3642 2N3644 T0105 PN3693 2N915 transistor 2N3504 2N3504
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VqEO (Cont’d) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) Item DEVI CE NO. Po larity NPN PNP @ <C h FE v CEO (hfe) (VCER) mA V Min/Max Min VCE(sat) V

Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. M PSA 9 3 M PSL51 P2N2907 ^ c so ^CEO V EBO (V) Min (V) Min (V) Min 200 200 5 100 60 100 40 4 5 Electrical Characteristics (Ta=25'C. Unless Otherwise Specified) 'c (W) (A) 0Tc=25°c 0.625 0.625

PN3641

Abstract: PN3642 PN3643 PN3644 PN3645 PN3646 PN3694 PN4249 PN4250A PN4258
Contextual Info: Small Signal Transistors TO-92 Case Continued TYPE NO. DESCRIPTION LEAD VCBO CODE (V) VCEO VEBO ICBO @ VCB (nA) (V) @VCE @ IC VCE (SAT ) @ IC Cob (V) (mA) (V) (mA) fT NF toff MIN (V) *VCES MIN MAX *ICES *ICEV MAX MIN *hFE (1kHZ) MAX PN3641 NPN AMPL/SWITCH

Contextual Info: / Small Signal Transistors TO-92 Case Continued T O-92 TYPE NO. FAMILY LEAD CODE VCBQ vCEO Ve BO •caw« i V c m kFE VCE o t ç m m m m MW *Vc*S MM MM 00 MW <t*A) VCE<S* T ) « 1C c ot> (V) (mA) *{« *> MAX h NF •off <PF) (MHz) (dB) •Crt, *TYP

Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE hFE VcBO v CEO v EBO ICBO i * vCB0 (V) (V) MIN *VCES MIN (V) (nA) MIN ‘ •c e s "'CEV @ v CE @ ic (V) (V) (mA) VCE(SA T)@ 'C Cob 00 (mA) *hfe(1kHZ) MIN MAX (PF) *Crb MAX h NF

PN3641

Abstract: PN3642 PN3643 PN3644 PN3645 PN3646 PN3694 PN4249 PN4250A PN4258
Contextual Info: Small Signal Transistors TO-92 Case Continued TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO ICBO @ VCB (nA) hFE @VCE @ IC VCE (SAT ) @ IC Cob fT NF toff (pF) (MHz) (dB) *Crb *TYP MAX MIN MAX MAX CODE (V) MIN (V) *VCES MIN (V) MAX *ICES *ICEV MAX (V) MIN *hFE

PN4274

Abstract: PN3641 PN3642 PN3643 PN3644 PN3645 PN3646 PN3694 PN4249 PN4250A
Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE VcB O v CEO v EBO h FE 'CBO «* v C B0 (V) (V) (V) (nA) MIN *VCES MIN MIN ‘ •c e s "•C EV @ v CE @ ic (V) (V) MIN MAX (mA) VCE(SA T) @ lc 00 |mA) Cob <PF) *Crb MAX h NF •off

BC337 BC547

Abstract: BC182 BC547 BC547 surface mount T0-92 BT2907A TN2905A BC237 2n5962
Contextual Info: bSD113Q DDa^Sl? 372 * N S C 5 m Devices Volts Min •c Min Max 2N4032 1000 100 2N6554 1500 80 SEniCOND PNP NF (dB) Max Package I’ d (A n ti» (mW) @25°C mA (MHz) Min mA 300 100 150 50 TO-39 800 300 50 75 50 T0-202(55) 1333 M M BT2907A 600 100 300 150

Contextual Info: TO-92 Plastic Package Transistors PNP M a x im u m R a tin g s Type No. M P S 6533 VCBO (V) Min 40 ^CEO (V) Min 40 ^EBO (V) Min 4 E le c tric a l C h a ra c te ris tic s (Ta=25°C , U n le s s O th e rw is e S p e c ifie d ) PD m 'c . (A) @Tc=25°( 0.625

T0236

Abstract: to236 2N2222A
Contextual Info: bßE T> m bSQ113G CHM * N S C S NATL SEniCOND DISCRETE Devices VcEO(sust) (Volts) Min NPN 60 50 *01» PNP mA Min mA VcE{sat) lc 4 Ig (Volts) Max mA *T (MHz) mA Min P D(Amb| Package (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150

BC337/BC327

Abstract: BC182 BC547 BC237 NATIONAL SEMICONDUCTOR BC327 NATIONAL SEMICONDUCTOR T0-92 BC547 to92 BC237 national 2N4032 2N6554 PN2907A
Contextual Info: •c NATL 50 45 mA Max Min Max 2N4032 1000 100 300 2N6554 NPN 60 SEniCOND (DISCRETE ) (Volts) Min PNP NF (dB) Max 372 • NSCS P d (Arnb) Package (mW) @25°C mA (MHz) Min mA 100 150 50 TO-39 800 1500 80 300 50 75 50 T0-202(55) 1333 MMBT2907A 600 100 300

BC548

Abstract: BC338 BC338-16 BC338-25 BC338-40 BC368 BC547C BC548A BC548B BC548C
Contextual Info: Small Signal General Purpose Transistors Part No. and Polarity NPN BC547C BC548A BC548B BC548C BC338 BC338-16 BC338-25 BC338-40 BC368 MPS8099 KSP8099 MPSA06 KSP06 MPS8098 KSP8098 MPSA05 KSP05 MPS6602 MPS2222A KSP2222A MPS6513 MPSA10 MPSA20 MPS2222 KSP2222

2N2907a national

Abstract: 2N2222A TO-92 2N2907A TO-92 2N4401 NATIONAL SEMICONDUCTOR NPN transistor 2N2222A in T0-92 package Transistor 2N2222A transistor 2N3725 2N2904A 2N2905A 2N2907A
Contextual Info: bôE T> m bS 0 1 1 3 G □DB'iSe'i c m NATL S E M I C O N D Devices VtEOtsusti Volts Min NPN (ns) Max mA bpE @ l( Mia mA VcE(sat)@lc& (Volts) Max mA mA *T (MHz) Min Package PD (Amt) (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150

2N3702 NATIONAL SEMICONDUCTOR

Abstract: 2N4917 2n5354 national semiconductor 2n3644 national semiconductor 2N4121 2N5143 MP03906 TIS92 2N3638A 2N3644
Contextual Info: Case Style VcBO V Min VCEO (V) Min Vebo (V) Min 2N2904 TO-5 60 40 5 Ices * Icbo @ Vcb (nA) (V) Max 20 50 By Its 2N2904A TO-5 60 60 40 5 5 10 20 50 50 Manufacturer also Avail. JAN/TX/V Versions 2N2905A also Avail. JAN/TX/V Versions TO-5 2N2906 TO-18 60 60

Contextual Info: PNP Transistors * D is c r e te P O W E R & S ig n a l T e c h n o lo g ie s National p^p s e m i c o n d u c t o r v D evice No. 2N4402 2N4403 Case Style TO-92 92 TO-92 (92) ¥ cbo v v CEO v V EBO (V) Min (V) Min (V) Min 40 40 5 40 40 *CBO M ax Q e h FE

2n2907 TO-92

Abstract: BC337 hie hre hfe bc337 hie c237a C714B BC337 hoe 2N3702 NATIONAL SEMICONDUCTOR C2371 C2379 hie for bc337
Contextual Info: Process National Semiconductor 3 S o -(pS 2_ 63 PNP M edium Row ^ 12. ( 2 13 2 1 Uj- D ESC R IPT IO N 3.020 Process 63 is a non-overlay, double-diffused, si I epitaxial device. Complement to Process 19. A PPLIC A T IO N This device was designed for use as general pure