PO77 Search Results

circuit diagram of Tri-State Buffer using CMOS

Abstract: verilog code for UART with BIST capability block diagram for UART with BIST capability tri state AT28 vhdl code for flip-flop vhdl pid verilog code pid controller free vhdl code for usart
Contextual Info: Features • 0.5 µm Drawn Gate Length 0.45 µm Leff Sea-of-Gates Architecture with • • • • • Triple-level Metal Embedded E2 Memory up to 256 Kb 3.3V Operation with 5.0V Tolerant Input and Output Buffers High-speed, 200 ps Gate Delay, 2-input NAND, FO = 2 Nominal

ATL35

Abstract: CL11 PO22 PO33 PO44 PO55 ATL35/208
Contextual Info: ATL35 I/O Buffer Cell Library-1.0-12/97 ATL35 0.35µ I/O Buffer Cell Library I/O Buffer Naming Convention . 8-2 I/O Site: Pad and Sub-Sections . 8-2

AOI222

Abstract: AOI2223 AOI222H MH1099 MH1242 0.35-um CMOS standard cell library inverter
Contextual Info: Features • High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries • System Level Integration Technology Cores on Request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:

AVR 8515 microcontroller

Abstract: FPGA AMI coding decoding tri state AOI222 AOI2223 AOI2223H AOI222H ATL35 0.35-um CMOS standard cell library inverter
Contextual Info: Features • System Level Integration Technology • 0.35 µm Geometry in Triple-level Metal • I/O Interfaces; CMOS, LVTTL, LVDS, PCI, USB – Output Currents up to 20 mA, 5V Tolerant I/O • Embedded Flash Memory with Capacities of 1Mbit, 2Mbit or 4Mbit

tristate buffer

Abstract: smd transistor AO HEX TO DECIMAL tristate buffer cmos A101 A201 MH1099E MH1156E PO11F MH1332E
Contextual Info: Features • High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal • Up to 1.198M Used Gates and 512 Pads with 3.3V, 3V and 2.5V Libraries when Tested to Space Quality Grades • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries when Tested to

P2624

Abstract: 12-24 volt power cord HW-64
Contextual Info: ACCESSORIES ADAPTERS – 19” TO 24” VERTICAL CABINETS, OPTIMA 19” INSTRUMENT CASES SPECIFY COLOR Used to install 19” panel width blowers, fan, and grille/filter assemblies in 24” panel width enclosures. Adapters are non-structural, and blower must be supported at rear.

atmel 216

Abstract: ECL IC NAND CQFP 256 PIN actel Atmel 642 PO22 tri state ATL35 atmel 334 20PCI atmel h 952
Contextual Info: Features • High-speed - 150 ps Gate Delay - 2-input NAND, FO = 2 nominal • Up to 2.7 Million Used Gates and 976 Pins • System Level Integration Technology – Cores: ARM7TDMI and AVR RISC Microcontrollers, OakDSP™ and LodeDSPCores™, 10T/100 Ethernet MAC, USB and PCI Cores

PO77

Contextual Info: ATL25 I/O Buffer Cell Library - Preliminary - 1.1 - 09/99 ATL25 0.25µ I/O Buffer Cell Library Preliminary I/O Buffer Naming Convention . 8-2 I/O Site: Pad and Sub-sections. 8-2

Contextual Info: PO11 ATL25 CMOS Gate Array cell data sheets 4.0 Description: Tristate output buffer, 2mA drive. Characterization: 25C, 3.3v, Nominal Process Cell area sites : 0.0 Pin caps(pF): AO=0.060, E0=0.060 Typical delay times (slope in ns/pF; intercept in ns; input transition = 0.600ns):

PO77F

Abstract: PO55F 090569 PO55V 24236 PO11F 328-529 po11s PX2L PO22
Contextual Info: ATL35 I/O Buffer Cell Library-1.4-09/99 ATL35 0.35µ I/O Buffer Cell Library I/O Buffer Naming Convention . 8-2 I/O Site: Pad and Sub-Sections . 8-2

PO88

Abstract: ttl buffer AOI222 AOI2223 AOI2223H AOI222H MH1099 MH1242 PRD21 PRD29V5
Contextual Info: Features • High Speed - 170 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.6 Million Used Gates and 596 pads, with 3.3V, 3V, and 2.5V libraries • System Level Integration Technology Cores on request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:

TEMIC PLD

Abstract: PRU10 PRD8 buffer 8x Structure of D flip-flop DFFSR AOI222 AOI2223 AOI2223H AOI222H MH1099
Contextual Info: MH1 1.6 Million gates Sea of Gates / Embedded Arrays 1. Description The MH1 Series Gate Array and Embedded Array families from TEMIC are fabricated in a 0.35µ CMOS process, with up to 3 levels of metal. This family features arrays with up to 1.6 million routable gates and 600 pins. The

transistor P239

Abstract: R33PI transistor 4287 AB P239 9 318 TI P272 w29 transistor P069 P04368 p055 IQB96
Contextual Info: The FPID Family Data Sheet Features Description Device I-Cube's family of FPID devices is available in a variety of I /O densities, ranging from 96 to 320 usable ports. The part number reflects the number of usable I/O s in the device. This family, from the

Transistor Equivalent list po55

Abstract: atmel 938 on digital code lock using vhdl mini pr credence tester 2042B atmel 532 atmel 422 bsu 479 atmel 424 2042B-ASIC
Contextual Info: ATL25 Series . Design Manual Table of Contents Section 1 ATL25 Series ASIC. 1-1 1.1 1.2

PO22

Abstract: PO-99 PO44 ATL35 PO33 PO55 CMOS GATE ARRAY AO40
Contextual Info: PO11 ATL35 CMOS Gate Array cell data sheets 1.0 DESCRIPTION: Tristate output buffer, 2mA drive Truth Table: AO E0 PO11 E0 A0 E0 | P -X | Z 1 | 0 1 1 | 1 P E0 pchn2pad_x1 I1 AO AO gateP gateN outputDRVS1 I3 P I2 nchn2pad_x1 / $Revision: 1.35 $

atmel 952

Abstract: 2041b IFR 840 Transistor Equivalent list po55 sbl 20100 Atmel 642 po55 "finish line" 642 atmel 422 atmel 530
Contextual Info: ATL35 Series . Design Manual Table of Contents Section 1 ATL35 Series . 1-1

Contextual Info: PO11 ATL35 CMOS Gate Array cell data sheets 1.0 DESCRIPTION: Tristate output buffer, 2mA drive Truth Table: AO E0 PO11 E0 A0 E0 | P -X | Z 1 | 0 1 1 | 1 P E0 pchn2pad_x1 I1 AO AO gateP gateN outputDRVS1 I3 P I2 nchn2pad_x1 / $Revision: 1.35 $