Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    POWER MOSFET IN A HEXDIP PACKAGE Search Results

    POWER MOSFET IN A HEXDIP PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET IN A HEXDIP PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JEDEC TO-252AA LAND PATTERN

    Abstract: MO-169AB MS-012AA TO-205A
    Text: Power Packages Power MOSFET Products HexDIP 4 PIN DUAL-IN-LINE PLASTIC PACKAGE E INCHES A 9o - 10o H1 D L1 L 5o - 6o 2o MAX. b1 e c M b e1 MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.194 0.198 4.93 5.02 - b 0.020 0.024 0.51 0.60 1, 2 b1 0.035 0.045 0.89


    Original     		PDF TS-001AA JEDEC TO-252AA LAND PATTERN MO-169AB MS-012AA TO-205A

    IRFD1Z3

    Abstract: IRFD1Z0 TA17451 TB334
    Text: IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Semiconductor 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.4A and 0.5A, 60V and 100V • Nanosecond Switching Speeds These are N-Channel enhancement mode silicon gate


    Original     		PDF TA17451. Impe13. IRFD1Z3 IRFD1Z0 TA17451 TB334

    IRFD220

    Abstract: No abstract text available
    Text: IRFD220, IRFD221, IRFD222, IRFD223 S E M I C O N D U C T O R 0.7A and 0.8A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.7A and 0.8A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFD220, IRFD221, IRFD222, IRFD223 TA09600. IRFD220

    Untitled

    Abstract: No abstract text available
    Text: IRFD320, IRFD321, IRFD322, IRFD323 S E M I C O N D U C T O R 0.5A and 0.4A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.5A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFD320, IRFD321, IRFD322, IRFD323 TA17404.

    IRFD110

    Abstract: IRFD113 HARRIS IRFD110 IRFD111 IRFD112 TA17441 TB334 IRFD110 91
    Text: IRFD110, IRFD111, IRFD112, IRFD113 Semiconductor 1A and 0.8A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1A and 0.8A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFD110, IRFD111, IRFD112, IRFD113 IRFD110 IRFD113 HARRIS IRFD110 IRFD111 IRFD112 TA17441 TB334 IRFD110 91

    irfd310

    Abstract: No abstract text available
    Text: IRFD310, IRFD311, IRFD312, IRFD313 S E M I C O N D U C T O R 0.3A and 0.4A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.3A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFD310, IRFD311, IRFD312, IRFD313 TA17444. irfd310

    IRFD123

    Abstract: IRFD120 HARRIS IRFD120 IRFD121 IRFD122 TA17401 TB334
    Text: IRFD120, IRFD121, IRFD122, IRFD123 Semiconductor 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and


    Original     		PDF IRFD120, IRFD121, IRFD122, IRFD123 IRFD123 IRFD120 HARRIS IRFD120 IRFD121 IRFD122 TA17401 TB334

    SiHFD9210

    Abstract: No abstract text available
    Text: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion


    Original     		PDF IRFD9210, SiHFD9210 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single D HEXDIP Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD224, SiHFD224 12-Mar-07

    irfd9024

    Abstract: SiHFD9024
    Text: SiHFD9024, IRFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion


    Original     		PDF SiHFD9024 IRFD9024 12-Mar-07 irfd9024

    IRF09120

    Abstract: IRFD9120 RFD9120 IRFD9123 IRFD9120 N CHANNEL fd9120 MOSFET IRFd9120 Power MOSFET in a HEXDIP package IRFD 9120 tc 9123
    Text: h e o I MäSS4S2 cmaamfc, i | Data Sheet No. PD-9.331G INTERNATIONAL R E C T I F I E R T-37-25 INTERNATIONAL RECTIFIER HEXFET* TRANSISTORS IO R IRFD9120 IRFD91S3 P-CHANNEL HEXDIP" 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL IN-LINE PACKAGE -100 VOLT, 0.6 Ohm, 1-Watt HEXDIP


    OCR Scan     		PDF T-37-25 IRFD9120 IRFD91S3 C-169 IRFD9120, IRFD9123 C-170 IRF09120 RFD9120 IRFD9120 N CHANNEL fd9120 MOSFET IRFd9120 Power MOSFET in a HEXDIP package IRFD 9120 tc 9123

    IRFD020

    Abstract: oasi 10C1 IRFD022 19s7
    Text: HE T D I 4ÖSS452 ^ QQdfl3ti2 *4 1 nil. _ Data Sheet No. PD-9.470A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER TO R IRFD0 2 0 IRFD0 2 2 HEXFET TRANSISTORS N-CHANNEL HEXDIP 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE FEATURES: 50 Volt, 0.10 Ohm, 1-Watt HEXDIP


    OCR Scan     		PDF 00Qfl3ti5 C-116- IRFD020 oasi 10C1 IRFD022 19s7

    IRFD9110

    Abstract: A15J IRFD9113 rectifier s4 case R-1
    Text: l ie o I Mös sHs a aoaama □ | Data Sheet Nó. PD-9.389F T-37-25 IN TER NA TIO NA L R E C T IF IE R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IO R IRFDS1 1 0 IRFD0 1 1 3 P-CHANNEL HEXDIP* 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE


    OCR Scan     		PDF S5452 T-37-25 IRFDS110 C-164 IRFD9110 A15J IRFD9113 rectifier s4 case R-1

    IRFD9223

    Abstract: LIC HD 13 IRFD 110 JA20 irfd9220
    Text: h e o I M fls s 4 s a a a a ä M ^ ö a | Data Sheet No. PD-9.439A T-37-25 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER TO R HEX FET TRANSISTORS IRFDS22Q IRFD9SS3 P-CHANNEL H EXD IP 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE


    OCR Scan     		PDF T-37-25 75BVDSS C-181 IRFD9220, IRFD9223 T-37-25 C-182 LIC HD 13 IRFD 110 JA20 irfd9220

    IRFD110

    Abstract: irfd113 328h IRFD11Q k 3525 MOSFET S402 FD113 fd110 IRFD110/111/112/113
    Text: HE D | 4055452 QQOaBbfl S | Dgta Sheet N q p D.g 328H INTERNATIONAL R E C T IF IE R T-35-25 IN T E R N A T IO N A L R E C T IF IE R llO R l HEXFET TRANSISTORS IRFD11Q N-CHANNEL IRFD113 HEXDIP 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE


    OCR Scan     		PDF T-35-25 IRFD11Q IRFD113 C-121 IRFD110, FD113 T-35-25 IRFD110 328h k 3525 MOSFET S402 fd110 IRFD110/111/112/113

    k 3525 MOSFET

    Abstract: IRFD210 diode D213 lp11e JIS S10C high voltage rectifier diode T35 D213 DIODE C136 Power MOSFET in a HEXDIP package IRFD213
    Text: HE 0 I INTERNATI ONAL 4055452 Q0Qâ3âb 7 | RECTIFIER Data Sheet No. PD-9.386E T-35-25 INTERNATIONAL RECTIFIER HEXFET TRANSISTORS I O R IRFD21 O IRFD21 3 N-C HAIMINIEL HEXDIP" 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE 200 Volt, 1.5 Ohm, 1-Watt HEXDIP


    OCR Scan     		PDF T-35-25 IRFD21 C-139 IRFD210, IRFD213 T-35- C-140 k 3525 MOSFET IRFD210 diode D213 lp11e JIS S10C high voltage rectifier diode T35 D213 DIODE C136 Power MOSFET in a HEXDIP package

    irfd9020

    Abstract: IRFD9022
    Text: H E D § 4Ö55M52 0000404 S | Data gheet No pD.9.462A T-37-25 INTERNATIONAL RECTIFIER in t e r n a t io n a l r e c t i f i e r IÖ R HEXFET TRANSISTORS IR F D 9 0 2 0 P-CHANNEL ^PolRFDSOSS HEXDIP 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE


    OCR Scan     		PDF T-37-25 -15ma C-158 irfd9020 IRFD9022

    irfd320

    Abstract: No abstract text available
    Text: H a IRFD320, IRFD321, IRFD322, IRFD323 r r i s ” “ I CONDUCTOE 0.5A and 0.4A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.5A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRFD320, IRFD321, IRFD322, IRFD323 TA1740GE RFD322, irfd320

    TO2506

    Abstract: No abstract text available
    Text: X RFW2N06RLE N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors Features Package 4-PIN HEXDIP TOP VIEW • 2A.60V • rDS on = 0.160ft • UIS Rating Curve (Single Pulse) • Design Optimized For 5 Volt Gate Drive DRAIN • Can be Driven Directly from CMOS, NMOS, TTL Circuits


    OCR Scan     		PDF 160ft RFW2N06RLE TA9861) AN7254 AN7260 RFW2N06RLE TO2506

    IRFD9010

    Abstract: IRFD9012 9460A latest RECTIFIER DESIGN T37Z MO-001 Diode Gfg 33
    Text: HE D § 4flSS4S2 00003=10 3 | Data Sheet No. PD-9.460A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS P-CHANNEL HEXDIP TO R IRFDSOIO IRFDSOI 2 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE -50 Volt, 0.50 Ohm, 1-Watt HEXDIP


    OCR Scan     		PDF T-37-zf 4fl554S2 C-152 IRFD9010 IRFD9012 9460A latest RECTIFIER DESIGN T37Z MO-001 Diode Gfg 33

    IRFD010

    Abstract: T3725 IRFD010 application notes LG 72A IRFDQ12 IRFD012 MO-001 Power MOSFET in a HEXDIP package MOSFET C106 F15A
    Text: HE D I 4055455 QQOÔBSb Ì | T-37-25 Data Sheet No. PD-9.464A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS N-CHANNEL HEXDIP I O R IRFD0 1 0 IRFDOi 2 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE 50 Volt, 0.20 Ohm, 1-Watt HEXDIP


    OCR Scan     		PDF T-37-25 IRFD010 C-110 T3725 IRFD010 application notes LG 72A IRFDQ12 IRFD012 MO-001 Power MOSFET in a HEXDIP package MOSFET C106 F15A

    k 3525 MOSFET

    Abstract: IRFD1ZO irfd1z3
    Text: HE 0 I MâSS4SH 0000300 b | Data Sheet No. PD-9.380G T-35-25 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER TO R HEXFET TRANSISTORS IRFD1 ZO IM-CHANNEL HEXDIP IRFD1Z3 1-WÄTT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PAGKAGE 100 Volt, 2.4 Ohm, 1-Watt HEXDIP


    OCR Scan     		PDF T-35-25 C-133 S54S2 C-134. k 3525 MOSFET IRFD1ZO irfd1z3

    IRFD9110

    Abstract: IRFD9113 IRFDS110
    Text: H E I IN T E R N A T IO N A L M f lS S M S a 0000410 □ | Data Sheet Nô. PD-9.389F T-37-25 R E C T IF IE R IN T E R N A T IO N A L IO R R E C T IF IE R HEXFET* TRANSISTORS IRFDS1 1 Q IRFDS1 1 3 P-CHANIMEL HEXDIP 1-WATT RATED POW ER M O SFETs 4 PIN, DUAL-IN-LINE P L A S T IC PACKAGE


    OCR Scan     		PDF T-37-25 IRFDS110 IRFDS11 C-164 IRFD9110 IRFD9113

    1RFD123

    Abstract: 1RFD120
    Text: HE D I MÖ55455 • 0000374 □ I ■ T-35-25 INTERNATIONAL R E C T I F I E R Data Sheet No. PD-9.385E _ INTERNATIONAL RECTIFIER HEXFET' TRANSISTORS II«R I IRFD1 SO IRFD1 S3 N-CHANNEL HEXDIP” 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE


    OCR Scan     		PDF T-35-25 C-127 IRFD120, IRFD123 S545E G0Gfl37c C-128 1RFD123 1RFD120