POWER SWITCHING REGULATORS Search Results
POWER SWITCHING REGULATORS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN |
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MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
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MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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MGN1S0508MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-8V GAN |
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POWER SWITCHING REGULATORS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SP6654
Abstract: SPX29152
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tl2431
Abstract: sp34063 XRP7657 TL243 SP6260 Step-up 12V to 19V 5A XRP7740 SP2525A XRP29302 sp7121
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XRP7704 XRP7708 XRP7740 tl2431 sp34063 XRP7657 TL243 SP6260 Step-up 12V to 19V 5A XRP7740 SP2525A XRP29302 sp7121 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching |
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UF830 UF830L-TA3-T UF830G-TA3-T O-220 UF830L-TF3-T UF830G-TF3-T O-220F UF830L-TF1-T QW-R502-046 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching |
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UF830Z UF830ZL-TF3-T UF830ZG-TF3-T QW-R502-612 | |
specifications of power mosfet
Abstract: N-Channel mosfet 400v to220 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
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UF840 O-220 O-220F1 O-220F2 O-220F O-262 O-263 QW-R502-047 specifications of power mosfet N-Channel mosfet 400v to220 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A | |
UF840Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching |
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UF840 UF840L-TA3-T UF840G-TA3-T UF840L-TF1-T UF840G-TF1-T UF840L-TF2-T UF840G-TF2-T UF840L-TF3-T UF840G-TF3-T UF840L-TF3T-T UF840 | |
MTP12P10
Abstract: AN569
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MTP12P10 r14525 MTP12P10/D MTP12P10 AN569 | |
MTP12P10
Abstract: P-CHANNEL TO-220 AN569
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MTP12P10 O-220 MTP12P10/D MTP12P10 P-CHANNEL TO-220 AN569 | |
MC34167T equivalent
Abstract: CHK1050 MJE130 PT3595 elmaco transformer MC34167 application notes MJE13005 MC34167 Application Notes 5930B 5925B
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MC34167 MC33167 MC34167, MC33167 f34167 MJE13005 5903B MBR20100CT 5925B MC34167T equivalent CHK1050 MJE130 PT3595 elmaco transformer application notes MJE13005 MC34167 Application Notes 5930B 5925B | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching |
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UF830 O-220 O-220F O-220F1 O-263 O-220F2 O-262 O-251 O-252 UF830L-Tat | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, |
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UF840 UF840L UF840-TA3-T UF840L-TA3-T O-220 UF840at QW-R502-047 | |
Coilcraft PT3595Contextual Info: MC34166 MC33166 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Power Switching Regulator POWER SWITCHING REGULATOR The MC34166, MC33166 series are high performance fixed frequency power switching regulators that contain the primary functions required for DC-to-DC |
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MC34166 MC33166 MC34166, MC33166 MJE13005 5903B MBR20100CT 5925B MC34166 Coilcraft PT3595 | |
UF630L-TM3-TContextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET DESCRIPTION 1 1 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, |
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UF630 O-220 O-220F O-220F1 O-262 O-252 O-251 O-220 O-220F1 O-220F UF630L-TM3-T | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, |
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UF840 UF840L-TA3-T UF840G-TA3-T UF840L-TF1-T UF840G-TF1-T UF840L-TF2-T UF840G-TF2-T UF840L-TF3-T UF840Gat QW-R502-047 | |
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UTC UF630L
Abstract: UF630L-TN3-R uf630 power mosfet TO-252 MOSFET p channel UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
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UF630 UF630L UF630-TA3-T UF630L-TA3-T QW-R502-049 UTC UF630L UF630L-TN3-R uf630 power mosfet TO-252 MOSFET p channel UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T | |
NS4163
Abstract: MOSFET for 400volts UF740 UF740L-TA3-T Power MOSFET 50V 10A UF740G-TQ2-T
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UF740 10Amps, 400Volts, UF740L-TA3-T UF740G-TA3-T O-220 UF740L-TF3-T UF740G-TF3-T O-220F UF740L-TQ2-T NS4163 MOSFET for 400volts UF740 UF740L-TA3-T Power MOSFET 50V 10A UF740G-TQ2-T | |
tp3055
Abstract: transistor 33166 t 34166t 33166T AM MODULATOR 1496 mc34166a PT3595 TP3055EL Bobbin EE 16 5930B
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MC34166 MC33166 MC34166, MC33166 featJE13005 5903B MBR20100CT-5925B tp3055 transistor 33166 t 34166t 33166T AM MODULATOR 1496 mc34166a PT3595 TP3055EL Bobbin EE 16 5930B | |
UF830L
Abstract: UF830G UF830 max3103
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UF830 O-220 O-220F O-262 O-251 O-252 UF830L-TA3-T UF830G-TA3-Tt QW-R502-046 UF830L UF830G UF830 max3103 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching |
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UF630 O-220 O-220F O-220F1 O-220F2 O-262 O-251 O-252 QW-R502-049 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF730-E Power MOSFET 5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching |
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UF730-E O-220 UF730L-TA3-T UF730G-TA3-T QW-R502-A06 | |
UF740L
Abstract: Power MOSFET 50V 10A UF740L-TA3-T UF740 MOSFET 400V TO-220 UF740-TA3-T UF740-TF3-T 200v 10A mosfet mosfet 10V 10A mosfet 400 V 10A
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UF740 UF740L UF740-TA3-T UF740L-TA3-T UF740-TF3-T UF740L-TF3-T QW-R502-078 UF740L Power MOSFET 50V 10A UF740L-TA3-T UF740 MOSFET 400V TO-220 UF740-TA3-T UF740-TF3-T 200v 10A mosfet mosfet 10V 10A mosfet 400 V 10A | |
UTC UF730L
Abstract: UF730L "Power MOSFET" UTC UF730 TO-252 MOSFET UF730 UF730L-TA3-T UF730-TA3-T UF730-TF3-T UF730L-TN3
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UF730 UF730L UF730G UF730-TA3-T UF730-TF3-T UF730-TN3-R UF730-TN3-T UF730L-TA3-T UF730L-TF3-T UF730L-TN3-R UTC UF730L UF730L "Power MOSFET" UTC UF730 TO-252 MOSFET UF730 UF730L-TA3-T UF730-TA3-T UF730-TF3-T UF730L-TN3 | |
MC34163P
Abstract: 3-347 transistor 34163p
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MC34163 MC33163 1N5822 MC34163P 3-347 transistor 34163p | |
12-6R3GB
Abstract: TDK RM XL 1402 093-R 12-5R0GB 15-23RGB RM05-20R RM09 rm15
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UL478, RM05-6R 09-3R 12-5R0GB 15-4R RM24-2R 48-1R RM05-15R RM09-8R 130x55x191 12-6R3GB TDK RM XL 1402 093-R 15-23RGB RM05-20R RM09 rm15 |