POWER TRANSISTOR PY Search Results

transistor TE 901 equivalent

Abstract: transistor TE 901 IGT6D11 IGT6E11
Contextual Info: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

Contextual Info: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor

Contextual Info: DISCRETE SEMICONDUCTORS RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor

xk30

Contextual Info: SILICON TRANSISTOR 2SD1614 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SD1614 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS in m illim eters

Contextual Info: DISCRETE SEMICONDUCTORS RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor

Contextual Info: DISCRETE SEMICONDUCTORS RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 19 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor

Contextual Info: DISCRETE SEMICONDUCTORS BLF1048 UHF power LDMOS transistor Preliminary specification Supersedes data of 1998 Jul 07 File under Discrete Semiconductors, SC19a Philips Sem iconductors 1998 Aug 05 PHILIPS Philips Semiconductors Preliminary specification UHF power LDMOS transistor

IEI-1213

Abstract: 2SD999 MEI-1202 MF-1134 SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL 2SB798 5493A IE1-1209 nec transistor selection guide
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD999 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD999 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package

SOT422A

Abstract: BLS3135-65
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SIH]H T BLS3135-65 Microwave power transistor P relim inary specification Philips Semiconductors 1999 A p r 28 PHILIPS Philips Semiconductors Preliminary specification Microwave power transistor BLS3135-65 PINNING - SOT422A FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BDP32 PNP medium power transistor 1999 Apr 23 Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP medium power transistor BDP32

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCP69 PNP medium power transistor 1999 Apr 08 Product specification Supersedes data of 1997 Mar 12 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP medium power transistor BCP69

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y iI T BCP68 NPN medium power transistor Product specification Supersedes data of 1997 Apr 09 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN medium power transistor BCP68 FEATURES

5490A

Abstract: B 1359 970-900 2SB798 2SD999 IEI-1213 MEI-1202 MF-1134 marking dk sot-89
Contextual Info: DATA SHEET • NEC SILICON TRANSISTOR 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package

transistor ph 45 v

Contextual Info: DISCRETE SEMICONDUCTORS BD330 PNP power transistor 1999 Apr 26 Product specification Supersedes data of 1997 Apr 22 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP power transistor BD330 FEATURES PINNING • High current max. 3 A

2SA1463

Abstract: 2SC3736 MEI-1202 MF-1134
Contextual Info: DATA SHEET • NEC SILICON TRANSISTOR 2SA1463 HIGH SPEED SW ITCHING PIMP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION PACKAGE DIM ENSIONS The 2SA1463 is designed for power amplifier and high speed switching applications. in millimeters FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC368 NPN medium power transistor 1999 Apr 26 Product specification Supersedes data of 1997 Feb 28 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN medium power transistor BC368

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC369 PNP medium power transistor 1999 Apr 26 Product specification Supersedes data of 1997 Feb 28 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP medium power transistor BC369

Contextual Info: Data sheet status Product specification date of issue March 1991 PHILIPS INTERNATIONAL PowerMOS transistor ^ GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a lastic full pack envelope, he device is intended for use in Switched Mode Power Supplies

LM 886 IC chip

Abstract: TEKELEC te 358
Contextual Info: DISCRETE SEMICONDUCTORS BLV2045N UHF power transistor P relim inary specification Philips Sem iconductors 1998 O ct 01 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um te m perature

2SC3046

Abstract: transistor ITT
Contextual Info: January 1990 Edithn 1.1 FUjlTSU PRODUCT PROFILE 2SC3046 Silicon High Speed Power Transistor DESCRIPTION The 2SC3046 is a silicon NPN planar general purpose, high power switching tran­ sistor fabricated with Fujitsu's unique Ring Em itter Transistor {R E T technology.

marking 3t1

Abstract: marking S3 amplifier RV2833B5X
Contextual Info: [ I N AMER P H I L I P S / D I S C R E T E DbE D • btS3131 00151b? 1 I RV2833B5X r-3 3 -n MICROWAVE POWER POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.

PHT11N06LT

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low

S100 transistor

Abstract: BUK455-200A BUK455-200B S100 T0220AB transistor smps circuit TRANSISTOR BO 345 db40ci0 PHILIPS S100
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711002b ÜObMQÔb bbT • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

2SB1301

Abstract: MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR 2S B 1301 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SB 1301 is designed for audio frequency pow er am plifier and switching application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS