PSA43 Search Results

Contextual Info: bOE D • CH ? Ü 5 7 B 0007210 00e! « Z E T B ZETEX SEMICONDUCTORS IMPIM Silicon Planar High Voltage Transistors M PSA42 M PSA43 D E S C R IP T IO N T h ese plastic encapsulated, general purp ose transistors are d esigned for applications requiring high breakdow n voltages, low

ADF4106

Abstract: AN-200 AN-201 AN-202
Contextual Info: PSA4360C-LF PHASE LOCKED LOOP 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 4360 - 4360 MHz • Step Size: 10000 KHz • PLL-24H - Style Package APPLICATIONS

MPSA42

Abstract: MPSA43 ZTX341 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
Contextual Info: SEMICONDUCTOR DICE NPN HIGH VOLTAGE Min. Min. Max. at V CB Volts Volts ZTX657 M PSA42 ZTX656 M PSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 h FE ICBO V CBO V CEO Dice type 300 300 200 200 150 16 0 140 125 120 10 0 300 300 200 200 150 14 0 120 125 120 100

psa42

Abstract: PSA43
Contextual Info: NPN Silicon Planar High Voltage Transistors M PSA42 M PSA43 DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltages, low saturation voltages, and low capacitance. The E-line package is formed by transfer

MMBTA43

Abstract: MPSA42 MPSA43 MPSA42 NATIONAL NATIONAL MPSA42 CO2V
Contextual Info: PSA431 MMBTA43 & Discrete P O W ER & S ig n a l Technologies National S e m i c o n d u c t o r ” M M BTA43 M PSA43 SOT-23 Mark: 1E NPN High Voltage Amplifier This device is designed for application as a video output to drive color C RT and other high voltage applications. Sourced

transistor E 13009

Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10

psa42

Contextual Info: MOTOROLA Order this document by MPSA42/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MPSA42* PSA43 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Symbol MPSA42 PSA43 Unit C o lle c to r-E m itte r Voltage VCEO 300 200 Vdc C o lle c to r-B a s e Voltage

psa42

Abstract: PSA43
Contextual Info: MPSA42* PSA43 MAXIMUM RATINGS Symbol MPSA42 PSA43 U n it C o lle c to r -E m itte r V o lta g e Rating VCEO 300 200 Vdc C o lle c to r-B a s e V o lta g e v CBO 300 200 V dc E m itte r-B a s e V o lta g e v EBO 6.0 6.0 V dc C o lle c to r C u rre n t — C o n tin u o u s

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistors MPSA42; PSA43 FEATURES PINNING • Low curren t max. 100 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 em itter • V ideo • T elephony • P rofessional com m unication equipm ent.

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

ZTX458

Abstract: ZTX558 ZTX758 BF493 ZTX4555 BF392 BF393 MPSA92 ZTX658 ZTX757
Contextual Info: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability. Type Max V CE sat at hFE at V cbo V CEO V V mA V mA NPN

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

transistor motorola 359

Abstract: MPSA28 MPSA29 MPSA42 MPSA43 MPSA44 transistor MPSA42 2904 g
Contextual Info: M PSA28 M PSA 29* MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Collector-Emitter Voltage VCES 80 100 Collector-Base Voltage VCBO 80 100 Emitter-Base Voltage Vdc Vdc vebo 12 Vdc Collector Current — Continuous 'c 500 mAdc Total Device Dissipation @ T /\ = 25°C

ZTX458

Abstract: BF493 BF392 BF393 MPSA92 ZTX558 ZTX658 ZTX757 ZTX758 2N5401 BF391
Contextual Info: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The tra n s is to rs s h o w n in th is ta b le are designed fo r d rivin g num erical in d ica to r tu b es, neon lam ps and o th e r a p p lica tio n s requiring high vo lta g e ca p a b ility. V cbo M ax ICBO

BF493

Abstract: ZTX338 MPSA06 ZTX451 ZTX452 ZTX454 ZTX551 ZTX552 ZTX553 ZTX554
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay S w itching, etc.

1n52408

Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which

cbf420

Abstract: BC556A BS170 116 BC558A BC549B NPN 2n3904 2N3904 cbf421 BC546A BC338-16
Contextual Info: List of Types Type Page Type Page Small-Signal Transistors NPN Small-Signal Transistors (PNP) 2N3904 2N4124 BC337-16, -25, -40 BC338-16, -25, -40 BC546-A, -B BC547-A, -B, -C BC548-A, -B, -C BC549-B, -C BC817-16, -25, -40 B C 8 1 8 -1 6,-25, -40 BC846-A, -B

PN5416

Abstract: 2N5415
Contextual Info: 18 Small Signal Leaded Devices High Voltage Transistors n Type hFE min @ ^CE sat @ *c max (V) (mA) 'c (mA) fT min (MHz) @ 'c Pkg (V) *c (mA) TO-39 TO-39 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 350 250 140 160 300 200 350 250 1000 1000 600 600 500 500 1000 1000

MPSA90

Abstract: MPS-A90 nt 407 f nt 407 mpsa92 A92 at MPS-A92 MPS-A42 MPS-A43 MPS-A93
Contextual Info: MPS-A92 silicon MPS-A93 PNP SILICON ANN U LA R TRANSISTORS . . . designed fo r general-purpose applications requiring high break­ down voltages, low saturation voltages and low capacitance. • PNP SILICON HIGH VOLTAGE TRANSISTORS High C oilector-E m itter Breakdown Voltage @ I q = 1.0 m Adc —

psa42

Abstract: sa42 MPSA42
Contextual Info: TOSHIBA MPSA42,43 Silicon NPN Transistor For High Voltage Control Application Features • High Voltage - VCE0 = 300V MPSA42 - VCE0 = 200V (PSA43) • Low Saturation Voltage - VCE(Sat) = 0.5V (Max.) @ lc = 20mA, lB = 2mA • Low Collector Output Capacitance

MPSA93

Abstract: PSA92 PSA93
Contextual Info: TOSHIBA MPSA92,93 Silicon PNP Transistor Unit in mm For High Voltage Application S I MAX. r - . - 1 X Features 3 • High Voltage r«- - VC eo = -300V MPSA92 - V C e o = -200V (MPSA93) • Low Saturation Voltage " VcE(sat) = -0.5V (Max.) @ lc = -20mA, lB = -2mA

ph 4148

Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31