QS 100 NPN TRANSISTOR Search Results

QS 100 NPN Transistor

Abstract: NPN transistor mhz s-parameter transistor w 431 IC 431 2SC4536 IC 7482 534-1 MAG RF Transistor s-parameter 638 transistor transistor rf
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4536 DESCRIPTION •Low Noise NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz ·Low Distortion IM2 = 57.5 dB TYP. @VCE = 10 V, IC = 50 mA IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA

Contextual Info: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from

pml 003 am

Abstract: ic pml 003 am ssm2210p 40nV cascode miller capacitance lc 7130
Contextual Info: SSM-2210 PMÏ AUDIO DUAL MATCHED NPN TRANSISTOR S p ie ^ FEATURES • • • • • • • V e ry L o w V o lta g e N o is e @ 100Hz, 1n V /\/H z M AX E x c e lle n t C u rre n t G ain M a t c h .0.5% TYP T ig h t V B£ M a tch VQS) . 2 0 0 n V M A X

Contextual Info: -T -Z .1 -Z 3 Differential Amplifiers Continued Bipolar Monolithic Dual Transistors — NPN *B1-2 PART NUMBER PACKAGE VBE 1-2 mV Max pVI°C Max a v be (Note 1) h FE (Note 1) nA Min Max b V ceo V Min •CBO nA Max NF dB Max ff MHz @ lc Min c obo pF Max COMMENTS

Contextual Info: KSD1417 NPN SILICON DARLINGTON TRANSISTOR HIGH POWER SWITCHING APPLICATIONS • High DC Current Gain • Low Collector Emitter Saturation Voltage • Complement to KSB1022 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic VcBO Symbol

2SK621

Contextual Info: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D 15) n Main Characteristics n V ds Application ü * V dsx LJ LI LI U LJ Neh 2 elements (V) *30 50 XN1872 n (A) (V) Basic gm loss (mA) (mS) 0.02 0.5 - 1 2 0.1 - V ds Id (mA)

Using Linvill Techniques

Abstract: Y11E MM1941 AN238 power 2N2221A 2N3308 AN238 small signal transistor MOTOROLA NPN transistor 2n2221a RF Transistor Selection
Contextual Info: Order this document by AN238/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN238 Transistor Mixer Design Using 2–Port Parameters Prepared by: Ernest Klein Applications Engineering ABSTRACT Mixer circuit design may be simplified by the use of small–signal admittance parameters. This note describes in

CA3097 equivalent

Abstract: CA3097E SCR 30v triggering circuit RCA-CA3097E volvo scr CA3097 PNP monolithic Transistor Arrays TA6281 0014L diode ZENER 927
Contextual Info: G E SOLID STATE Ql D E | 3075001 00141,55 7 Arrays CA3097 'Y 'q 3 Thyristor/Transistor Array '25 For Military, Comm ercial, and Industrial Applications Features: • Com plete isolation between elements m n-p-n transistor - Vceo = 3 0 V m in . /c = 100 mA (max.)

motorola transistor

Abstract: Using Linvill Techniques for R. F. Amplifiers MM1941 2N2221 Using Linvill Techniques transistor for RF amplifier and mixer an238 motorola amplifier mixer circuit high frequency mixer 2N2221A
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by AN238/D AN238 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Transistor Mixer Design Using 2-Port Parameters

Contextual Info: KSD1273 NPN EPITAXIAL SILICON TRANSISTOR HIGH hFE, AF POWER AMPLIFIER TO-220F • ”Full Pack” Package for Simplified Mounting Only by a Screw, Requires no Insulator. ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage

Contextual Info: KSC2759 NPN EPITAXIAL SILICON TRANSISTOR MIXER, OSCILLATOR FOR UHF TUNER SOT-23 ABSOLUTE MAXIMUM RATINGS TA =25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

amplifier sot-89

Abstract: KSA1203 KSC2883
Contextual Info: KSC2883 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER SOT-89 • 3W Output Application • Collector Dissipation PC=1~2W: Mounted on Ceramic Board • Complement to KSA1203 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage

KSB1121

Abstract: KSD1621
Contextual Info: KSD1621 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT DRIVER APPLICATIONS • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 SOT-89 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic

TRANSISTOR MJD122

Abstract: TRANSISTOR tip122 MJD122 TIP122 NPN Transistor 8A
Contextual Info: MJD122 NPN SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ - I “ Suffix) • Electrically Similar to Popular TIP122

PZTA29

Contextual Info: PZTA29 NPN Darlington Transistor PZTA29 NPN Darlington Transistor • This device designed for applications requiring extremely high current gain at collector currents to 500mA. • Sourced from process 03. 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter

MW MARK

Abstract: MMBTA13 MPSA14
Contextual Info: MMBTA13 NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. 3 2 1 SOT-23 Mark: 1M 1. Base 2. Emitter 3. Collector

Transistor B C 458

Abstract: MPSA13 transistor c 458 MPS-A13 c 458 c transistor transistor 458 MPSA14
Contextual Info: MPSA13 NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings

Contextual Info: PZTA29 NPN Darlington Transistor PZTA29 NPN Darlington Transistor • This device designed for applications requiring extremely high current gain at collector currents to 500mA. • Sourced from process 03. 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter

KSC900

Contextual Info: KSC900 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY, LOW NOISE AMPLIFIER TO-92 • Collector-Base Voltage VCBO=30V • Low Noise Level NL=50mV Max ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

SOT89 MARKING CODE B2

Abstract: KSC2881 KSA1201
Contextual Info: KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y

K*D1691

Abstract: KSB1151 KSD1691
Contextual Info: KSD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT TO-126 • HIGH POWER DISSIPATION: PC = 1.3W TA=25°C • Complementary to KSB1151 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector- Base Voltage Collector-Emitter Voltage

Contextual Info: KSC1222 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY LOW NOISE AMPLIFIER TO-92 • Collector-Base Voltage: VCBO=50V • Low Noise Level: NL=40mV Max ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage

KSC2383

Abstract: tv vertical ic circuit list
Contextual Info: KSC2383 NPN EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT COLOR TV VERTICAL DEFLECTION OUTPUT TO-92L ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

FJP13007

Abstract: electronic ballast with npn transistor
Contextual Info: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220 2.Collector 3.Emitter TC = 25°C unless otherwise noted