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    RF BIPOLAR TRANSISTORS Search Results

    RF BIPOLAR TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    RF BIPOLAR TRANSISTORS Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts


    Original     		PDF MRF20060R/D MRF20060R MRF20060RS MRF20060R

    BD136

    Abstract: MJD47 MRF20060R MRF20060RS MURS160T3 rohm mtbf
    Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts


    Original     		PDF MRF20060R/D MRF20060R MRF20060RS MRF20060R) MRF20060R BD136 MJD47 MRF20060RS MURS160T3 rohm mtbf

    LDMOS

    Abstract: LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications
    Text: AN1223 Application note RF power transistors: comparative study of LDMOS versus bipolar technology Introduction RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor yields superior


    Original     		PDF AN1223 LDMOS LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications

    amplitude modulation applications

    Abstract: LDMOS AN1223
    Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain


    Original     		PDF AN1223 amplitude modulation applications LDMOS AN1223

    mosfet high power rf ldmos

    Abstract: Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB
    Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain


    Original     		PDF AN1223 mosfet high power rf ldmos Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB

    451a0

    Abstract: motorola rf power transistors mtbf
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.


    Original     		PDF MRF20060R MRF20060RS 451a0 motorola rf power transistors mtbf

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


    Original     		PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    bd136 equivalent

    Abstract: DIODE 851 MOTOROLA MOTOROLA ELECTROLYTIC CAPACITOR BD136 MJD47 MRF20060R MRF20060RS MURS160T3 RF NPN POWER TRANSISTOR 3 GHZ 5w 150 j47
    Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.


    Original     		PDF MRF20060R/D MRF20060R MRF20060RS MRF20060R MRF20060RS bd136 equivalent DIODE 851 MOTOROLA MOTOROLA ELECTROLYTIC CAPACITOR BD136 MJD47 MURS160T3 RF NPN POWER TRANSISTOR 3 GHZ 5w 150 j47

    RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 BD135 MJD47 MRF20060 MRF20060S RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x
    Text: MOTOROLA Order this document by MRF20060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high


    Original     		PDF MRF20060/D MRF20060 MRF20060S MRF20060 MRF20060S RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 BD135 MJD47 RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x

    IrL 1540 N

    Abstract: bd135 equivalent 1N4003 BD135 BD136 MRF15060 MRF15060S
    Text: MOTOROLA Order this document by MRF15060/D SEMICONDUCTOR TECHNICAL DATA MRF15060 MRF15060S The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The high gain and broadband performance of


    Original     		PDF MRF15060/D MRF15060 MRF15060S MRF15060 MRF15060/D* IrL 1540 N bd135 equivalent 1N4003 BD135 BD136 MRF15060S

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    sc74750

    Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
    Text: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes


    Original     		PDF OT346 SC-59) sc74750 MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921

    bd136 equivalent

    Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high


    OCR Scan     		PDF MRF20060 MRF20060S Impedan70 IS22I bd136 equivalent RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3

    transistor fn 155

    Abstract: motorola rf device transistors equivalent 0912
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF15060 MRF15060S RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequen­ cies from 1400 to 1600 MHz. The high gain and broadband performance of


    OCR Scan     		PDF IS22I MRF15060 MRF15060S transistor fn 155 motorola rf device transistors equivalent 0912

    bd135 equivalent

    Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M RF20060 M RF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high


    OCR Scan     		PDF MRF20060 MRF20060S Impedanc159 IS22I bd135 equivalent RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006

    bd136 equivalent

    Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ pl 032 pif FL 032 PIF
    Text: MOTOROLA Order this document by MRF20060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high


    OCR Scan     		PDF MRF20060/D MRF20060 MRF20060S bd136 equivalent RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ pl 032 pif FL 032 PIF

    SU 179 transistor

    Abstract: transistors equivalent 0912 bd135 equivalent IrL 1540 N 1000 watts class d amplifier schematic bd136 equivalent IrL 1540 g RF NPN POWER TRANSISTOR 3 GHZ 200 watts
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF15060 M RF15060S RF Pow er Bipolar Transistors Designed for broadband commercial and industrial applications at frequen­ cies from 1400 to 1600 MHz. The high gain and broadband performance of


    OCR Scan     		PDF IS12I IS22I MRF15060 MRF15060S SU 179 transistor transistors equivalent 0912 bd135 equivalent IrL 1540 N 1000 watts class d amplifier schematic bd136 equivalent IrL 1540 g RF NPN POWER TRANSISTOR 3 GHZ 200 watts

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION All information in this data sheet is preliminary J ¥ U iy L \J V i and subject to change. 11/96 3V, 1W RF Power Transistors for 900MHz Applications The MAX2601 is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a high-performance silicon bipolar RF power transistor, and a bias­


    OCR Scan     		PDF 900MHz 900MHz MAX2602) MAX2601/MAX2602 MAX2602 MAX2601/MAX2602 MAX2601ESA MAX2602ESA MAX2602E/D 915MHz

    AT605

    Abstract: No abstract text available
    Text: RF and M icrowave S ilicon Bipolar Transistors The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include m ature technology both in the


    OCR Scan     		PDF AT-420 AT-214 AT-005 AT-016. AT605

    169 MHz RF CHIP

    Abstract: motorola rf power transistors mtbf 015 j47 5659065 bipolar transistor s-parameter DIODE 851 MOTOROLA GX-0300-55-22 BD136 MJD47 MRF20060R
    Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M R F20060R M RF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.


    OCR Scan     		PDF MRF20060R/D MRF20060R MRF20060RS Distortion--30 51A-03 MRF20060RS) MRF20060RS 169 MHz RF CHIP motorola rf power transistors mtbf 015 j47 5659065 bipolar transistor s-parameter DIODE 851 MOTOROLA GX-0300-55-22 BD136 MJD47

    MRF485

    Abstract: mrf477 MRF475 MRF476 Motorola transistors MRF476 Motorola transistors MRF475 Motorola transistors MRF455 MRF466 MRF455 MRF460
    Text: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de­ signed for operation in RF Power Amplifiers. These transistors


    OCR Scan     		PDF MRF476 T0-220AB MRF453 MRF455/A MRF454 MRF475 MRF449 MRF450/A MRF497 O-220AB MRF485 mrf477 Motorola transistors MRF476 Motorola transistors MRF475 Motorola transistors MRF455 MRF466 MRF455 MRF460

    MRF485

    Abstract: MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464 MRF475
    Text: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de­ signed for operation in RF Power Amplifiers. These transistors


    OCR Scan     		PDF Distorti1-11 MRF421 MRF475 O-22GAB MRF412 IMRF410 MRF485 MRF401 45A-09 MRF426 MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464